Overview
The BCP53,115 is a single PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for various automotive and industrial applications, offering high reliability and robust performance.
It features a high power handling capability, making it suitable for power electronics, high-speed switching, and amplification. The transistor is AEC-Q100 qualified, ensuring its suitability for demanding automotive environments.
Key Specifications
Parameter | Value |
---|---|
Manufacturer | Nexperia USA Inc. |
Transistor Type | PNP |
Maximum Collector Current (Ic) | 1 A |
Collector-Emitter Breakdown Voltage (Vceo) | 80 V |
Maximum Power Dissipation | 1 W |
Collector-Emitter Saturation Voltage (Vce Sat) | 500 mV @ 50 mA, 500 mA |
DC Current Gain (hFE) | 63 @ 150 mA, 2 V |
Transition Frequency | 145 MHz |
Operating Temperature | Up to 150°C (TJ) |
Mounting Type | Surface Mount |
Package | SOT-223 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Key Features
- High power handling up to 1 W
- High collector-emitter breakdown voltage of 80 V
- High collector current capability of 1 A
- Low collector-emitter saturation voltage of 500 mV @ 500 mA
- High DC current gain of 63 @ 150 mA, 2 V
- High transition frequency of 145 MHz
- AEC-Q100 qualified for automotive applications
- Wide operating temperature range up to 150°C
- Robust design for high-reliability applications
- Suitable for high-speed switching and amplification
Applications
The BCP53,115 transistor is suitable for a variety of applications, including:
- Automotive systems: Due to its AEC-Q100 qualification, it is ideal for use in automotive electronics.
- Industrial control systems: Its high reliability and robust performance make it suitable for industrial control and automation.
- Power electronics: It can be used in power supplies, motor control, and other power electronic applications.
- High-speed switching and amplification: Its high transition frequency and low saturation voltage make it suitable for high-speed switching and amplification circuits.
Q & A
- What is the maximum collector current of the BCP53,115 transistor?
The maximum collector current is 1 A.
- What is the collector-emitter breakdown voltage of the BCP53,115 transistor?
The collector-emitter breakdown voltage is 80 V.
- What is the maximum power dissipation of the BCP53,115 transistor?
The maximum power dissipation is 1 W.
- What is the DC current gain (hFE) of the BCP53,115 transistor?
The DC current gain (hFE) is 63 @ 150 mA, 2 V.
- What is the transition frequency of the BCP53,115 transistor?
The transition frequency is 145 MHz.
- What is the operating temperature range of the BCP53,115 transistor?
The operating temperature range is up to 150°C (TJ).
- Is the BCP53,115 transistor AEC-Q100 qualified?
Yes, the BCP53,115 transistor is AEC-Q100 qualified for automotive applications.
- What is the package type of the BCP53,115 transistor?
The package type is SOT-223.
- Is the BCP53,115 transistor RoHS compliant?
Yes, the BCP53,115 transistor is lead free and RoHS compliant.
- What are some typical applications of the BCP53,115 transistor?
Typical applications include automotive systems, industrial control systems, power electronics, and high-speed switching and amplification circuits.