BCP53,115
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Nexperia USA Inc. BCP53,115

Manufacturer No:
BCP53,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 80V 1A SOT223
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BCP53,115 is a single PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for various automotive and industrial applications, offering high reliability and robust performance.

It features a high power handling capability, making it suitable for power electronics, high-speed switching, and amplification. The transistor is AEC-Q100 qualified, ensuring its suitability for demanding automotive environments.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Transistor Type PNP
Maximum Collector Current (Ic) 1 A
Collector-Emitter Breakdown Voltage (Vceo) 80 V
Maximum Power Dissipation 1 W
Collector-Emitter Saturation Voltage (Vce Sat) 500 mV @ 50 mA, 500 mA
DC Current Gain (hFE) 63 @ 150 mA, 2 V
Transition Frequency 145 MHz
Operating Temperature Up to 150°C (TJ)
Mounting Type Surface Mount
Package SOT-223
Lead Free Status / RoHS Status Lead free / RoHS Compliant

Key Features

  • High power handling up to 1 W
  • High collector-emitter breakdown voltage of 80 V
  • High collector current capability of 1 A
  • Low collector-emitter saturation voltage of 500 mV @ 500 mA
  • High DC current gain of 63 @ 150 mA, 2 V
  • High transition frequency of 145 MHz
  • AEC-Q100 qualified for automotive applications
  • Wide operating temperature range up to 150°C
  • Robust design for high-reliability applications
  • Suitable for high-speed switching and amplification

Applications

The BCP53,115 transistor is suitable for a variety of applications, including:

  • Automotive systems: Due to its AEC-Q100 qualification, it is ideal for use in automotive electronics.
  • Industrial control systems: Its high reliability and robust performance make it suitable for industrial control and automation.
  • Power electronics: It can be used in power supplies, motor control, and other power electronic applications.
  • High-speed switching and amplification: Its high transition frequency and low saturation voltage make it suitable for high-speed switching and amplification circuits.

Q & A

  1. What is the maximum collector current of the BCP53,115 transistor?

    The maximum collector current is 1 A.

  2. What is the collector-emitter breakdown voltage of the BCP53,115 transistor?

    The collector-emitter breakdown voltage is 80 V.

  3. What is the maximum power dissipation of the BCP53,115 transistor?

    The maximum power dissipation is 1 W.

  4. What is the DC current gain (hFE) of the BCP53,115 transistor?

    The DC current gain (hFE) is 63 @ 150 mA, 2 V.

  5. What is the transition frequency of the BCP53,115 transistor?

    The transition frequency is 145 MHz.

  6. What is the operating temperature range of the BCP53,115 transistor?

    The operating temperature range is up to 150°C (TJ).

  7. Is the BCP53,115 transistor AEC-Q100 qualified?

    Yes, the BCP53,115 transistor is AEC-Q100 qualified for automotive applications.

  8. What is the package type of the BCP53,115 transistor?

    The package type is SOT-223.

  9. Is the BCP53,115 transistor RoHS compliant?

    Yes, the BCP53,115 transistor is lead free and RoHS compliant.

  10. What are some typical applications of the BCP53,115 transistor?

    Typical applications include automotive systems, industrial control systems, power electronics, and high-speed switching and amplification circuits.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:1 W
Frequency - Transition:145MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number BCP53,115 BCP56,115 BCP53H,115 BCP54,115 BCP55,115 BCP53T,115 BCP53T115 BCP51,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active Active Active
Transistor Type PNP NPN - NPN NPN - - PNP
Current - Collector (Ic) (Max) 1 A 1 A - 1 A 1 A - - 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V - 45 V 60 V - - 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA - 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA - - 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) - 100nA (ICBO) 100nA (ICBO) - - 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V - 63 @ 150mA, 2V 63 @ 150mA, 2V - - 63 @ 150mA, 2V
Power - Max 1 W 960 mW - 960 mW 1.35 W - - 1 W
Frequency - Transition 145MHz 180MHz - 180MHz 180MHz - - 145MHz
Operating Temperature 150°C (TJ) 150°C (TJ) - 150°C (TJ) 150°C (TJ) - - 150°C (TJ)
Mounting Type Surface Mount Surface Mount - Surface Mount Surface Mount - - Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA - TO-261-4, TO-261AA TO-261-4, TO-261AA - - TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223 - SOT-223 SOT-223 - - SOT-223

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