BCP53T115
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Nexperia USA Inc. BCP53T115

Manufacturer No:
BCP53T115
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
BCP53T SERIES - 80 V, 1 A PNP ME
Delivery:
Payment:
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Product Introduction

Overview

The BCP53T115 is a PNP medium power transistor produced by Nexperia USA Inc. This transistor is part of the BCP53T series, which is known for its high performance and reliability. It is packaged in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package, making it suitable for a variety of applications requiring compact and efficient power handling.

Nexperia USA Inc., a global semiconductor company headquartered in the Netherlands, ensures that the BCP53T115 meets stringent quality and performance standards. This transistor is designed to handle high currents and voltages, making it an ideal choice for medium power applications.

Key Specifications

Parameter Value Unit
Part Number BCP53T115 -
Category Transistors - Bipolar (BJT) - Single -
Manufacturer Nexperia USA Inc. -
Description BCP53T SERIES - 80 V, 1 A PNP ME -
Package SOT223 (SC-73) -
Collector-Base Breakdown Voltage (V(BR)CBO) -100 Vdc
Collector-Emitter Breakdown Voltage (V(BR)CEO) -80 Vdc
Collector-Emitter Saturation Voltage (VCE(sat)) -0.5 Vdc @ IC = -500 mA, IB = -50 mA
Base-Emitter On Voltage (VBE(on)) -1.0 Vdc @ IC = -500 mA, VCE = -2.0 Vdc
DC Current Gain (hFE) 25 - 250 - @ IC = -5.0 mA to -500 mA, VCE = -2.0 Vdc
Transition Frequency (fT) 50 MHz @ IC = -10 mA, VCE = -5.0 Vdc, f = 35 MHz

Key Features

  • High Voltage and Current Handling: The BCP53T115 can handle up to 80 V and 1 A, making it suitable for medium power applications.
  • Compact SOT223 Package: The transistor is packaged in a SOT223 (SC-73) SMD plastic package, which is ideal for space-constrained designs.
  • High DC Current Gain: The transistor has a DC current gain (hFE) ranging from 25 to 250, ensuring reliable and efficient operation.
  • Low Saturation Voltage: The collector-emitter saturation voltage (VCE(sat)) is as low as 0.5 V, reducing power losses and improving efficiency.
  • Lead-Free and RoHS Compliant: The transistor is lead-free and RoHS compliant, meeting environmental and regulatory standards.

Applications

  • Automotive Electronics: Suitable for various automotive applications, including power management and control circuits.
  • Industrial Control Systems: Used in industrial control systems, motor drives, and power supplies due to its high reliability and performance.
  • Consumer Electronics: Applied in consumer electronics such as audio amplifiers, power supplies, and other medium power devices.
  • Power Management: Ideal for power management circuits, including voltage regulators and switching power supplies.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BCP53T115?

    The maximum collector-emitter breakdown voltage (V(BR)CEO) is 80 Vdc.

  2. What is the package type of the BCP53T115?

    The BCP53T115 is packaged in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

  3. What is the maximum collector current of the BCP53T115?

    The maximum collector current (Ic) is 1 A.

  4. What is the typical DC current gain (hFE) of the BCP53T115?

    The DC current gain (hFE) ranges from 25 to 250, depending on the collector current and collector-emitter voltage.

  5. Is the BCP53T115 lead-free and RoHS compliant?

    Yes, the BCP53T115 is lead-free and RoHS compliant.

  6. What is the transition frequency (fT) of the BCP53T115?

    The transition frequency (fT) is 50 MHz at IC = -10 mA, VCE = -5.0 Vdc, and f = 35 MHz.

  7. What are some common applications of the BCP53T115?

    The BCP53T115 is commonly used in automotive electronics, industrial control systems, consumer electronics, and power management circuits.

  8. What is the base-emitter on voltage (VBE(on)) of the BCP53T115?

    The base-emitter on voltage (VBE(on)) is approximately 1.0 Vdc at IC = -500 mA and VCE = -2.0 Vdc).

  9. What is the collector-emitter saturation voltage (VCE(sat)) of the BCP53T115?

    The collector-emitter saturation voltage (VCE(sat)) is as low as 0.5 Vdc at IC = -500 mA and IB = -50 mA).

  10. Who is the manufacturer of the BCP53T115?

    The BCP53T115 is manufactured by Nexperia USA Inc.).

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BCP53T115 BCP53,115 BCP53T,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type - PNP -
Current - Collector (Ic) (Max) - 1 A -
Voltage - Collector Emitter Breakdown (Max) - 80 V -
Vce Saturation (Max) @ Ib, Ic - 500mV @ 50mA, 500mA -
Current - Collector Cutoff (Max) - 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce - 63 @ 150mA, 2V -
Power - Max - 1 W -
Frequency - Transition - 145MHz -
Operating Temperature - 150°C (TJ) -
Mounting Type - Surface Mount -
Package / Case - TO-261-4, TO-261AA -
Supplier Device Package - SOT-223 -

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