BCP53T115
  • Share:

Nexperia USA Inc. BCP53T115

Manufacturer No:
BCP53T115
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
BCP53T SERIES - 80 V, 1 A PNP ME
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP53T115 is a PNP medium power transistor produced by Nexperia USA Inc. This transistor is part of the BCP53T series, which is known for its high performance and reliability. It is packaged in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package, making it suitable for a variety of applications requiring compact and efficient power handling.

Nexperia USA Inc., a global semiconductor company headquartered in the Netherlands, ensures that the BCP53T115 meets stringent quality and performance standards. This transistor is designed to handle high currents and voltages, making it an ideal choice for medium power applications.

Key Specifications

Parameter Value Unit
Part Number BCP53T115 -
Category Transistors - Bipolar (BJT) - Single -
Manufacturer Nexperia USA Inc. -
Description BCP53T SERIES - 80 V, 1 A PNP ME -
Package SOT223 (SC-73) -
Collector-Base Breakdown Voltage (V(BR)CBO) -100 Vdc
Collector-Emitter Breakdown Voltage (V(BR)CEO) -80 Vdc
Collector-Emitter Saturation Voltage (VCE(sat)) -0.5 Vdc @ IC = -500 mA, IB = -50 mA
Base-Emitter On Voltage (VBE(on)) -1.0 Vdc @ IC = -500 mA, VCE = -2.0 Vdc
DC Current Gain (hFE) 25 - 250 - @ IC = -5.0 mA to -500 mA, VCE = -2.0 Vdc
Transition Frequency (fT) 50 MHz @ IC = -10 mA, VCE = -5.0 Vdc, f = 35 MHz

Key Features

  • High Voltage and Current Handling: The BCP53T115 can handle up to 80 V and 1 A, making it suitable for medium power applications.
  • Compact SOT223 Package: The transistor is packaged in a SOT223 (SC-73) SMD plastic package, which is ideal for space-constrained designs.
  • High DC Current Gain: The transistor has a DC current gain (hFE) ranging from 25 to 250, ensuring reliable and efficient operation.
  • Low Saturation Voltage: The collector-emitter saturation voltage (VCE(sat)) is as low as 0.5 V, reducing power losses and improving efficiency.
  • Lead-Free and RoHS Compliant: The transistor is lead-free and RoHS compliant, meeting environmental and regulatory standards.

Applications

  • Automotive Electronics: Suitable for various automotive applications, including power management and control circuits.
  • Industrial Control Systems: Used in industrial control systems, motor drives, and power supplies due to its high reliability and performance.
  • Consumer Electronics: Applied in consumer electronics such as audio amplifiers, power supplies, and other medium power devices.
  • Power Management: Ideal for power management circuits, including voltage regulators and switching power supplies.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BCP53T115?

    The maximum collector-emitter breakdown voltage (V(BR)CEO) is 80 Vdc.

  2. What is the package type of the BCP53T115?

    The BCP53T115 is packaged in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

  3. What is the maximum collector current of the BCP53T115?

    The maximum collector current (Ic) is 1 A.

  4. What is the typical DC current gain (hFE) of the BCP53T115?

    The DC current gain (hFE) ranges from 25 to 250, depending on the collector current and collector-emitter voltage.

  5. Is the BCP53T115 lead-free and RoHS compliant?

    Yes, the BCP53T115 is lead-free and RoHS compliant.

  6. What is the transition frequency (fT) of the BCP53T115?

    The transition frequency (fT) is 50 MHz at IC = -10 mA, VCE = -5.0 Vdc, and f = 35 MHz.

  7. What are some common applications of the BCP53T115?

    The BCP53T115 is commonly used in automotive electronics, industrial control systems, consumer electronics, and power management circuits.

  8. What is the base-emitter on voltage (VBE(on)) of the BCP53T115?

    The base-emitter on voltage (VBE(on)) is approximately 1.0 Vdc at IC = -500 mA and VCE = -2.0 Vdc).

  9. What is the collector-emitter saturation voltage (VCE(sat)) of the BCP53T115?

    The collector-emitter saturation voltage (VCE(sat)) is as low as 0.5 Vdc at IC = -500 mA and IB = -50 mA).

  10. Who is the manufacturer of the BCP53T115?

    The BCP53T115 is manufactured by Nexperia USA Inc.).

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
448

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200T2S
DD15S200T2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Similar Products

Part Number BCP53T115 BCP53,115 BCP53T,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type - PNP -
Current - Collector (Ic) (Max) - 1 A -
Voltage - Collector Emitter Breakdown (Max) - 80 V -
Vce Saturation (Max) @ Ib, Ic - 500mV @ 50mA, 500mA -
Current - Collector Cutoff (Max) - 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce - 63 @ 150mA, 2V -
Power - Max - 1 W -
Frequency - Transition - 145MHz -
Operating Temperature - 150°C (TJ) -
Mounting Type - Surface Mount -
Package / Case - TO-261-4, TO-261AA -
Supplier Device Package - SOT-223 -

Related Product By Categories

PMBTA06,235
PMBTA06,235
Nexperia USA Inc.
TRANS NPN 80V 0.5A TO236AB
BC846AW,115
BC846AW,115
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
BC858B,235
BC858B,235
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
SBC846ALT1G
SBC846ALT1G
onsemi
TRANS NPN 65V 0.1A SOT23-3
BC857A_R1_00001
BC857A_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
BC848BWT1G
BC848BWT1G
onsemi
TRANS NPN 30V 0.1A SC70-3
BDX53C
BDX53C
STMicroelectronics
TRANS NPN DARL 100V 8A TO220
BCW60D
BCW60D
Fairchild Semiconductor
TRANS NPN 32V 0.1A SOT23-3
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
BCV46QTA
BCV46QTA
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT23
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
PBSS5350Z/ZLF
PBSS5350Z/ZLF
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223

Related Product By Brand

PESD5V0S1BLD,315
PESD5V0S1BLD,315
Nexperia USA Inc.
TVS DIODE 5VWM 14VC DFN1006D-2
BAV70,235
BAV70,235
Nexperia USA Inc.
DIODE ARRAY GP 100V 215MA SOT23
PMEG4010AESBYL
PMEG4010AESBYL
Nexperia USA Inc.
DIODE SCHOTTKY 40V 1A SOD993
PMEG6010ELR-QX
PMEG6010ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZX384-C3V3,115
BZX384-C3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
MM3Z3V6T1GX
MM3Z3V6T1GX
Nexperia USA Inc.
VOLTAGE REGULATOR DIODES
BZX84-C6V2/DG/B4R
BZX84-C6V2/DG/B4R
Nexperia USA Inc.
DIODE ZENER 6.2V 250MW TO236AB
PDZ10B-QX
PDZ10B-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BC846AW,135
BC846AW,135
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
BC807-16LZ
BC807-16LZ
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
BUK9212-55B,118
BUK9212-55B,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A DPAK
NXB0104GU12X
NXB0104GU12X
Nexperia USA Inc.
IC TXRX TRANSLATING XQFN12