Nexperia USA Inc. BCP54,115

Manufacturer No:: BCP54,115
Manufacturer:: Nexperia USA Inc.
Package:: Tape & Reel (TR)
Description:: TRANS NPN 45V 1A SOT223
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Product Introduction

Overview

The BCP54,115 is a medium power NPN bipolar transistor manufactured by Nexperia USA Inc. This transistor is designed for a variety of applications requiring high collector current and power dissipation capabilities. It is packaged in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package, making it suitable for surface mount assembly. The BCP54,115 is AEC-Q101 qualified, ensuring its reliability and performance in automotive and other demanding environments.

Key Specifications

Parameter	Value	Unit
Type	NPN	-
Collector-Emitter Voltage (V_CEO)	45	V
Collector Current (I_C)	1	A
DC Current Gain (h_FE)	63 - 250	-
Transition Frequency (f_T)	180	MHz
Power Dissipation (P_tot)	960	mW
Junction Temperature (T_J)	150	°C
Package	SOT223 (SC-73)	-
Lead Free Status / RoHS Status	Lead Free / RoHS Compliant	-

Key Features

High collector current capability (I_C) and high power dissipation capability.
Three current gain selections (h_FE) to accommodate various application requirements.
AEC-Q101 qualified, ensuring reliability and performance in automotive and other demanding environments.
Surface mount SOT223 (SC-73) package for efficient assembly and space-saving design.
High transition frequency (f_T) of 180 MHz, suitable for high-frequency applications.

Applications

Linear voltage regulators
MOSFET drivers
Low-side switches
Battery-driven devices
Power management circuits
Amplifiers
Automotive and industrial applications

Q & A

What is the collector-emitter voltage (V_CEO) of the BCP54,115 transistor?
The collector-emitter voltage (V_CEO) of the BCP54,115 transistor is 45 V.
What is the maximum collector current (I_C) of the BCP54,115 transistor?
The maximum collector current (I_C) of the BCP54,115 transistor is 1 A.
What is the DC current gain (h_FE) range of the BCP54,115 transistor?
The DC current gain (h_FE) range of the BCP54,115 transistor is 63 to 250.
What is the transition frequency (f_T) of the BCP54,115 transistor?
The transition frequency (f_T) of the BCP54,115 transistor is 180 MHz.
What is the maximum junction temperature (T_J) of the BCP54,115 transistor?
The maximum junction temperature (T_J) of the BCP54,115 transistor is 150°C.
Is the BCP54,115 transistor AEC-Q101 qualified?
What package type is used for the BCP54,115 transistor?
The BCP54,115 transistor is packaged in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package.
Is the BCP54,115 transistor RoHS compliant?
What are some common applications of the BCP54,115 transistor?
Where can I purchase the BCP54,115 transistor?

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UnitPrice: $0.47

Quantity: 1,323

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Part Number	BCP54,115	BCP56,115	BCP55,115	BCP54,135	BCP51,115	BCP53,115
Manufacturer	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.
Product Status	Active	Active	Active	Active	Active	Active
Transistor Type	NPN	NPN	NPN	NPN	PNP	PNP
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	45 V	80 V	60 V	45 V	45 V	80 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	63 @ 150mA, 2V	63 @ 150mA, 2V	63 @ 150mA, 2V	63 @ 150mA, 2V	63 @ 150mA, 2V	63 @ 150mA, 2V
Power - Max	960 mW	960 mW	1.35 W	960 mW	1 W	1 W
Frequency - Transition	180MHz	180MHz	180MHz	180MHz	145MHz	145MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223	SOT-223	SOT-223	SOT-223	SOT-223	SOT-223

Related Product By Categories

Related Product By Brand

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	63 @ 150mA, 2V
Power - Max:	960 mW
Frequency - Transition:	180MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223