BCP54,115
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Nexperia USA Inc. BCP54,115

Manufacturer No:
BCP54,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP54,115 is a medium power NPN bipolar transistor manufactured by Nexperia USA Inc. This transistor is designed for a variety of applications requiring high collector current and power dissipation capabilities. It is packaged in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package, making it suitable for surface mount assembly. The BCP54,115 is AEC-Q101 qualified, ensuring its reliability and performance in automotive and other demanding environments.

Key Specifications

Parameter Value Unit
Type NPN -
Collector-Emitter Voltage (VCEO) 45 V
Collector Current (IC) 1 A
DC Current Gain (hFE) 63 - 250 -
Transition Frequency (fT) 180 MHz
Power Dissipation (Ptot) 960 mW
Junction Temperature (TJ) 150 °C
Package SOT223 (SC-73) -
Lead Free Status / RoHS Status Lead Free / RoHS Compliant -

Key Features

  • High collector current capability (IC) and high power dissipation capability.
  • Three current gain selections (hFE) to accommodate various application requirements.
  • AEC-Q101 qualified, ensuring reliability and performance in automotive and other demanding environments.
  • Surface mount SOT223 (SC-73) package for efficient assembly and space-saving design.
  • High transition frequency (fT) of 180 MHz, suitable for high-frequency applications.

Applications

  • Linear voltage regulators
  • MOSFET drivers
  • Low-side switches
  • Battery-driven devices
  • Power management circuits
  • Amplifiers
  • Automotive and industrial applications

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BCP54,115 transistor?

    The collector-emitter voltage (VCEO) of the BCP54,115 transistor is 45 V.

  2. What is the maximum collector current (IC) of the BCP54,115 transistor?

    The maximum collector current (IC) of the BCP54,115 transistor is 1 A.

  3. What is the DC current gain (hFE) range of the BCP54,115 transistor?

    The DC current gain (hFE) range of the BCP54,115 transistor is 63 to 250.

  4. What is the transition frequency (fT) of the BCP54,115 transistor?

    The transition frequency (fT) of the BCP54,115 transistor is 180 MHz.

  5. What is the maximum junction temperature (TJ) of the BCP54,115 transistor?

    The maximum junction temperature (TJ) of the BCP54,115 transistor is 150°C.

  6. Is the BCP54,115 transistor AEC-Q101 qualified?
  7. What package type is used for the BCP54,115 transistor?

    The BCP54,115 transistor is packaged in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package.

  8. Is the BCP54,115 transistor RoHS compliant?
  9. What are some common applications of the BCP54,115 transistor?
  10. Where can I purchase the BCP54,115 transistor?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:960 mW
Frequency - Transition:180MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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In Stock

$0.47
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Similar Products

Part Number BCP54,115 BCP56,115 BCP55,115 BCP54,135 BCP51,115 BCP53,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active
Transistor Type NPN NPN NPN NPN PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V 80 V 60 V 45 V 45 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 960 mW 960 mW 1.35 W 960 mW 1 W 1 W
Frequency - Transition 180MHz 180MHz 180MHz 180MHz 145MHz 145MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 SOT-223

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