BCP54-16,135
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Nexperia USA Inc. BCP54-16,135

Manufacturer No:
BCP54-16,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP54-16,135 is a medium power NPN bipolar junction transistor (BJT) produced by Nexperia USA Inc. This transistor is part of the BCP54 series and is designed for a wide range of applications requiring high current and power handling capabilities. The BCP54-16,135 is packaged in the SOT223 (SC-73) package, which offers excellent thermal and electrical conductivity.

This transistor is AEC-Q101 qualified, making it suitable for use in automotive and other demanding environments. It features high collector current capability, high power dissipation, and three current gain selections, making it versatile for various electronic designs.

Key Specifications

Parameter Conditions Min Typ Max Unit
VCEO (Collector-Emitter Voltage) Open base - - 45 V
IC (Collector Current) - - - 1 A
ICM (Peak Collector Current) Single pulse; tp ≤ 1 ms - - 2 A
hFE (DC Current Gain) VCE = 2 V; IC = 150 mA 100 - 250 -
Ptot (Total Power Dissipation) Tamb ≤ 25 °C - - 0.65 W
Tj (Junction Temperature) - - - 150 °C
fT (Transition Frequency) VCE = 5 V; IC = 50 mA; f = 100 MHz 100 - 180 MHz

Key Features

  • High collector current capability (IC = 1 A)
  • High power dissipation capability (Ptot up to 0.65 W)
  • Three current gain selections (hFE = 100 to 250)
  • AEC-Q101 qualified for automotive applications
  • Exposed heatsink for excellent thermal and electrical conductivity (SOT223 package)
  • High transition frequency (fT up to 180 MHz)

Applications

  • Linear voltage regulators
  • Power management
  • Low-side switches
  • MOSFET drivers
  • Battery-driven devices
  • Amplifiers
  • Automotive and industrial electronics
  • Consumer and mobile devices

Q & A

  1. What is the maximum collector-emitter voltage of the BCP54-16,135 transistor?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the maximum collector current of the BCP54-16,135 transistor?

    The maximum collector current (IC) is 1 A.

  3. What is the peak collector current of the BCP54-16,135 transistor?

    The peak collector current (ICM) is 2 A for a single pulse with tp ≤ 1 ms.

  4. What are the current gain selections for the BCP54-16,135 transistor?

    The DC current gain (hFE) selections are 100 to 250.

  5. What is the total power dissipation capability of the BCP54-16,135 transistor?

    The total power dissipation (Ptot) is up to 0.65 W at Tamb ≤ 25 °C.

  6. What is the junction temperature limit of the BCP54-16,135 transistor?

    The junction temperature (Tj) limit is 150 °C.

  7. Is the BCP54-16,135 transistor AEC-Q101 qualified?

    Yes, the BCP54-16,135 transistor is AEC-Q101 qualified for automotive applications.

  8. What package type is the BCP54-16,135 transistor available in?

    The BCP54-16,135 transistor is available in the SOT223 (SC-73) package.

  9. What are some common applications of the BCP54-16,135 transistor?

    Common applications include linear voltage regulators, power management, low-side switches, MOSFET drivers, battery-driven devices, and amplifiers.

  10. What is the transition frequency of the BCP54-16,135 transistor?

    The transition frequency (fT) is up to 180 MHz.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:960 mW
Frequency - Transition:180MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number BCP54-16,135 BCP56-16,135 BCP51-16,135 BCP53-16,135 BCP54-10,135 BCP54-16,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active
Transistor Type NPN NPN PNP PNP NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V 80 V 45 V 80 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 960 mW 960 mW 1 W 1 W 650 mW 960 mW
Frequency - Transition 180MHz 180MHz 145MHz 145MHz 180MHz 180MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 SOT-223

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