Nexperia USA Inc. BCP54-16,135

Manufacturer No:: BCP54-16,135
Manufacturer:: Nexperia USA Inc.
Package:: Tape & Reel (TR)
Description:: TRANS NPN 45V 1A SOT223
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Product Introduction

Overview

The BCP54-16,135 is a medium power NPN bipolar junction transistor (BJT) produced by Nexperia USA Inc. This transistor is part of the BCP54 series and is designed for a wide range of applications requiring high current and power handling capabilities. The BCP54-16,135 is packaged in the SOT223 (SC-73) package, which offers excellent thermal and electrical conductivity.

This transistor is AEC-Q101 qualified, making it suitable for use in automotive and other demanding environments. It features high collector current capability, high power dissipation, and three current gain selections, making it versatile for various electronic designs.

Key Specifications

Parameter	Conditions	Min	Typ	Max	Unit
V_CEO (Collector-Emitter Voltage)	Open base	-	-	45	V
I_C (Collector Current)	-	-	-	1	A
I_CM (Peak Collector Current)	Single pulse; tp ≤ 1 ms	-	-	2	A
h_FE (DC Current Gain)	V_CE = 2 V; I_C = 150 mA	100	-	250	-
P_tot (Total Power Dissipation)	T_amb ≤ 25 °C	-	-	0.65	W
T_j (Junction Temperature)	-	-	-	150	°C
f_T (Transition Frequency)	V_CE = 5 V; I_C = 50 mA; f = 100 MHz	100	-	180	MHz

Key Features

High collector current capability (IC = 1 A)
High power dissipation capability (P_tot up to 0.65 W)
Three current gain selections (h_FE = 100 to 250)
AEC-Q101 qualified for automotive applications
Exposed heatsink for excellent thermal and electrical conductivity (SOT223 package)
High transition frequency (f_T up to 180 MHz)

Applications

Linear voltage regulators
Power management
Low-side switches
MOSFET drivers
Battery-driven devices
Amplifiers
Automotive and industrial electronics
Consumer and mobile devices

Q & A

What is the maximum collector-emitter voltage of the BCP54-16,135 transistor?
The maximum collector-emitter voltage (V_CEO) is 45 V.
What is the maximum collector current of the BCP54-16,135 transistor?
The maximum collector current (I_C) is 1 A.
What is the peak collector current of the BCP54-16,135 transistor?
The peak collector current (I_CM) is 2 A for a single pulse with tp ≤ 1 ms.
What are the current gain selections for the BCP54-16,135 transistor?
The DC current gain (h_FE) selections are 100 to 250.
What is the total power dissipation capability of the BCP54-16,135 transistor?
The total power dissipation (P_tot) is up to 0.65 W at T_amb ≤ 25 °C.
What is the junction temperature limit of the BCP54-16,135 transistor?
The junction temperature (T_j) limit is 150 °C.
Is the BCP54-16,135 transistor AEC-Q101 qualified?
Yes, the BCP54-16,135 transistor is AEC-Q101 qualified for automotive applications.
What package type is the BCP54-16,135 transistor available in?
The BCP54-16,135 transistor is available in the SOT223 (SC-73) package.
What are some common applications of the BCP54-16,135 transistor?
Common applications include linear voltage regulators, power management, low-side switches, MOSFET drivers, battery-driven devices, and amplifiers.
What is the transition frequency of the BCP54-16,135 transistor?
The transition frequency (f_T) is up to 180 MHz.

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UnitPrice: $0.11

Quantity: 7,757

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Part Number	BCP54-16,135	BCP56-16,135	BCP51-16,135	BCP53-16,135	BCP54-10,135	BCP54-16,115
Manufacturer	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.
Product Status	Active	Active	Active	Active	Active	Active
Transistor Type	NPN	NPN	PNP	PNP	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	45 V	80 V	45 V	80 V	45 V	45 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 2V	100 @ 150mA, 2V	100 @ 150mA, 2V	100 @ 150mA, 2V	63 @ 150mA, 2V	100 @ 150mA, 2V
Power - Max	960 mW	960 mW	1 W	1 W	650 mW	960 mW
Frequency - Transition	180MHz	180MHz	145MHz	145MHz	180MHz	180MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223	SOT-223	SOT-223	SOT-223	SOT-223	SOT-223

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Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 2V
Power - Max:	960 mW
Frequency - Transition:	180MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223