Overview
The BCP55-10,115 is an NPN medium power transistor produced by Nexperia USA Inc. This transistor is part of the BCP55 series and is packaged in a small SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. It is designed to handle high current and power dissipation, making it suitable for a variety of applications across different industries.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCEO (Collector-Emitter Voltage) | Open base | - | - | 60 | V |
| IC (Collector Current) | - | - | - | 1 | A |
| ICM (Peak Collector Current) | Single pulse; tp ≤ 1 ms | - | - | 2 | A |
| hFE (DC Current Gain) | VCE = 2 V; IC = 150 mA | 63 | - | 160 | - |
| Ptot (Total Power Dissipation) | Tamb ≤ 25 °C | - | - | 0.65 | W |
| TJ (Junction Temperature) | - | - | - | 150 | °C |
| Tamb (Ambient Temperature) | - | -55 | - | 150 | °C |
| Tstg (Storage Temperature) | - | -65 | - | 150 | °C |
Key Features
- High current capability up to 1 A
- Three current gain selections
- High power dissipation capability
- Exposed heatsink for excellent thermal and electrical conductivity (in other packages like SOT89 and SOT1061)
- Leadless very small SMD plastic package with medium power capability
- AEC-Q101 qualified for automotive applications
Applications
- Linear voltage regulators
- Power management
- Low-side switches
- MOSFET drivers
- Battery-driven devices
- Amplifiers
Q & A
- What is the maximum collector-emitter voltage of the BCP55-10 transistor?
The maximum collector-emitter voltage (VCEO) is 60 V. - What is the maximum collector current of the BCP55-10 transistor?
The maximum collector current (IC) is 1 A. - What is the peak collector current of the BCP55-10 transistor?
The peak collector current (ICM) is 2 A for a single pulse with tp ≤ 1 ms. - What is the DC current gain (hFE) of the BCP55-10 transistor?
The DC current gain (hFE) is between 63 and 160 at VCE = 2 V and IC = 150 mA. - What is the total power dissipation of the BCP55-10 transistor at 25 °C ambient temperature?
The total power dissipation (Ptot) is up to 0.65 W at Tamb ≤ 25 °C. - What is the junction temperature limit of the BCP55-10 transistor?
The junction temperature (TJ) limit is 150 °C. - What are the storage temperature limits for the BCP55-10 transistor?
The storage temperature (Tstg) limits are from -65 °C to 150 °C. - Is the BCP55-10 transistor AEC-Q101 qualified?
Yes, the BCP55-10 transistor is AEC-Q101 qualified for automotive applications. - What package type is the BCP55-10 transistor available in?
The BCP55-10 transistor is available in the SOT223 (SC-73) package. - What are some common applications of the BCP55-10 transistor?
Common applications include linear voltage regulators, power management, low-side switches, MOSFET drivers, battery-driven devices, and amplifiers.
