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BCP55-10,115
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Nexperia USA Inc. BCP55-10,115

Manufacturer No:
BCP55-10,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP55-10,115 is an NPN medium power transistor produced by Nexperia USA Inc. This transistor is part of the BCP55 series and is packaged in a small SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. It is designed to handle high current and power dissipation, making it suitable for a variety of applications across different industries.

Key Specifications

ParameterConditionsMinTypMaxUnit
VCEO (Collector-Emitter Voltage)Open base--60V
IC (Collector Current)---1A
ICM (Peak Collector Current)Single pulse; tp ≤ 1 ms--2A
hFE (DC Current Gain)VCE = 2 V; IC = 150 mA63-160-
Ptot (Total Power Dissipation)Tamb ≤ 25 °C--0.65W
TJ (Junction Temperature)---150°C
Tamb (Ambient Temperature)--55-150°C
Tstg (Storage Temperature)--65-150°C

Key Features

  • High current capability up to 1 A
  • Three current gain selections
  • High power dissipation capability
  • Exposed heatsink for excellent thermal and electrical conductivity (in other packages like SOT89 and SOT1061)
  • Leadless very small SMD plastic package with medium power capability
  • AEC-Q101 qualified for automotive applications

Applications

  • Linear voltage regulators
  • Power management
  • Low-side switches
  • MOSFET drivers
  • Battery-driven devices
  • Amplifiers

Q & A

  1. What is the maximum collector-emitter voltage of the BCP55-10 transistor?
    The maximum collector-emitter voltage (VCEO) is 60 V.
  2. What is the maximum collector current of the BCP55-10 transistor?
    The maximum collector current (IC) is 1 A.
  3. What is the peak collector current of the BCP55-10 transistor?
    The peak collector current (ICM) is 2 A for a single pulse with tp ≤ 1 ms.
  4. What is the DC current gain (hFE) of the BCP55-10 transistor?
    The DC current gain (hFE) is between 63 and 160 at VCE = 2 V and IC = 150 mA.
  5. What is the total power dissipation of the BCP55-10 transistor at 25 °C ambient temperature?
    The total power dissipation (Ptot) is up to 0.65 W at Tamb ≤ 25 °C.
  6. What is the junction temperature limit of the BCP55-10 transistor?
    The junction temperature (TJ) limit is 150 °C.
  7. What are the storage temperature limits for the BCP55-10 transistor?
    The storage temperature (Tstg) limits are from -65 °C to 150 °C.
  8. Is the BCP55-10 transistor AEC-Q101 qualified?
    Yes, the BCP55-10 transistor is AEC-Q101 qualified for automotive applications.
  9. What package type is the BCP55-10 transistor available in?
    The BCP55-10 transistor is available in the SOT223 (SC-73) package.
  10. What are some common applications of the BCP55-10 transistor?
    Common applications include linear voltage regulators, power management, low-side switches, MOSFET drivers, battery-driven devices, and amplifiers.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:1.35 W
Frequency - Transition:180MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number BCP55-10,115 BCP56-10,115 BCP55-16,115 BCP53-10,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type NPN NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1.35 W 960 mW 1.35 W 1 W
Frequency - Transition 180MHz 180MHz 180MHz 145MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223 SOT-223 SOT-223

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