BCP56-10,115
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Nexperia USA Inc. BCP56-10,115

Manufacturer No:
BCP56-10,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP56-10,115 is an NPN medium power transistor produced by Nexperia USA Inc. This transistor is housed in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package, making it suitable for a variety of applications requiring medium power handling. The BCP56-10 is part of the BCP56 series, known for its high collector current capability and high power dissipation, making it a reliable choice for various electronic designs.

Key Specifications

Parameter Value Unit
Type number BCP56-10 -
Package version SOT223 -
Package name SC-73 -
Size (mm) 6.5 x 3.5 x 1.65 mm
Channel type NPN -
Ptot (mW) 650 mW
VCEO [max] (V) 80 V
IC [max] (mA) 1000 mA
hFE [min] 63 -
hFE [max] 160 -
TJ [max] (°C) 150 °C
fT [min] (MHz) 100 MHz
Automotive qualified Yes -

Key Features

  • High collector current capability (IC and ICM)
  • Three current gain selections
  • High power dissipation capability
  • Collector-emitter breakdown voltage of 80 V
  • Collector-emitter saturation voltage of 500 mV @ 50 mA, 500 mA
  • Transition frequency of 100 MHz

Applications

  • Linear voltage regulators
  • MOSFET drivers
  • Low-side switches
  • Power management
  • Amplifiers
  • Battery-driven devices

Q & A

  1. Q: What is the BCP56-10,115 transistor used for?

    A: The BCP56-10,115 is an NPN medium power transistor used in various applications such as linear voltage regulators, MOSFET drivers, low-side switches, power management, amplifiers, and battery-driven devices.

  2. Q: What is the maximum collector current of the BCP56-10,115?

    A: The maximum collector current (IC) of the BCP56-10,115 is 1 A.

  3. Q: What is the collector-emitter breakdown voltage of the BCP56-10,115?

    A: The collector-emitter breakdown voltage (VCEO) of the BCP56-10,115 is 80 V.

  4. Q: What is the minimum DC current gain (hFE) of the BCP56-10,115?

    A: The minimum DC current gain (hFE) of the BCP56-10,115 is 63.

  5. Q: Is the BCP56-10,115 automotive qualified?

    A: Yes, the BCP56-10,115 is automotive qualified.

  6. Q: What is the maximum junction temperature (TJ) of the BCP56-10,115?

    A: The maximum junction temperature (TJ) of the BCP56-10,115 is 150°C.

  7. Q: How can I order the BCP56-10,115?

    A: You can order the BCP56-10,115 through authorized distributors such as Mouser, Digi-Key, or directly from Nexperia's sales organization and their network of global and regional distributors.

  8. Q: What is the warranty period for the BCP56-10,115?

    A: The warranty period for the BCP56-10,115 can vary depending on the supplier, but it is typically covered by a 1-year warranty.

  9. Q: How can I ensure the authenticity of the BCP56-10,115?

    A: Ensure you purchase from authorized distributors or directly from Nexperia. Suppliers like Ovaga also verify the credentials of original Nexperia manufacturers and authorized agents.

  10. Q: What are the packaging options for the BCP56-10,115?

    A: The BCP56-10,115 is available in Tape & Reel (TR), Cut Tape (CT), and Digi-Reel® packaging options.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:960 mW
Frequency - Transition:180MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number BCP56-10,115 BCP56-16,115 BCP56-10,135 BCP56-10H,115 BCP53-10,115 BCP55-10,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active
Transistor Type NPN NPN NPN - PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A - 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V - 80 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA - 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) - 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V - 63 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 960 mW 960 mW 960 mW - 1 W 1.35 W
Frequency - Transition 180MHz 180MHz 180MHz - 145MHz 180MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) - 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount - Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA - TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223 SOT-223 - SOT-223 SOT-223

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