Nexperia USA Inc. BCP56-16,115

Manufacturer No:: BCP56-16,115
Manufacturer:: Nexperia USA Inc.
Package:: Tape & Reel (TR)
Description:: TRANS NPN 80V 1A SOT223
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Product Introduction

Overview

The BCP56-16,115 is a medium power NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is part of the BCP56 series and is designed for high-performance applications requiring reliable and efficient operation. It features a high collector current capability and high power dissipation, making it suitable for a variety of industrial, automotive, and consumer electronics.

Key Specifications

Parameter	Value
Type	NPN Bipolar Junction Transistor
Collector-Emitter Voltage (V_CEO)	80 V
Collector Current (I_C)	1 A
Transition Frequency (f_T)	180 MHz
Power Dissipation (P_tot)	650 mW
Current Gain (h_FE)	100 - 250
Junction Temperature (T_J)	150°C
Package	SOT223 (SC-73)
Package Size	6.5 x 3.5 x 1.65 mm
Automotive Qualified	Yes

Key Features

High collector current capability and high power dissipation.
Three current gain selections available.
High transition frequency of 180 MHz.
Surface mount SOT223 package for easy integration into modern designs.
Automotive qualified, ensuring reliability in demanding environments.
Compliant with RoHS and other environmental standards.

Applications

The BCP56-16,115 transistor is versatile and can be used in a wide range of applications, including:

Automotive systems: For power management, switching, and amplification tasks.
Industrial control systems: For motor control, power supplies, and other high-current applications.
Consumer electronics: For audio amplifiers, power supplies, and other high-performance electronic devices.
Power management: In switching regulators, DC-DC converters, and other power management circuits.

Q & A

What is the maximum collector-emitter voltage of the BCP56-16,115 transistor?
The maximum collector-emitter voltage (V_CEO) is 80 V.
What is the maximum collector current of the BCP56-16,115 transistor?
The maximum collector current (I_C) is 1 A.
What is the transition frequency of the BCP56-16,115 transistor?
The transition frequency (f_T) is 180 MHz.
What is the power dissipation capability of the BCP56-16,115 transistor?
The power dissipation (P_tot) is 650 mW.
What is the current gain range of the BCP56-16,115 transistor?
The current gain (h_FE) ranges from 100 to 250.
What is the junction temperature limit of the BCP56-16,115 transistor?
The junction temperature (T_J) limit is 150°C.
In what package is the BCP56-16,115 transistor available?
The transistor is available in the SOT223 (SC-73) package.
Is the BCP56-16,115 transistor automotive qualified?
Yes, the transistor is automotive qualified.
What are some common applications for the BCP56-16,115 transistor?
Common applications include automotive systems, industrial control systems, consumer electronics, and power management circuits.
Is the BCP56-16,115 transistor RoHS compliant?
Yes, the transistor is RoHS compliant.

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UnitPrice: $0.48

Quantity: 401

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Manufacturer	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	NXP USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.
Product Status	Active	Active	Active	Active	Active	Active	Active	Active
Transistor Type	NPN	NPN	-	-	PNP	NPN	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A	-	-	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	-	-	80 V	45 V	60 V	80 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	-	-	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	-	-	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 2V	100 @ 150mA, 2V	-	-	100 @ 150mA, 2V	100 @ 150mA, 2V	100 @ 150mA, 2V	63 @ 150mA, 2V
Power - Max	960 mW	960 mW	-	-	1 W	960 mW	1.35 W	960 mW
Frequency - Transition	180MHz	180MHz	-	-	145MHz	180MHz	180MHz	180MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	-	-	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	-	-	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	-	-	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223	SOT-223	-	-	SOT-223	SOT-223	SOT-223	SOT-223

Related Product By Categories

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 2V
Power - Max:	960 mW
Frequency - Transition:	180MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223