Overview
The BCP56-10H,115 is an NPN medium power bipolar junction transistor (BJT) produced by NXP USA Inc., now part of Nexperia. This transistor is designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage of 80 V and a maximum collector current of 1 A, making it suitable for a wide range of electronic circuits.
The BCP56-10H is housed in a compact SOT223 (SC-73) package, which enhances its thermal performance and allows for easy integration into various circuit designs. This transistor is particularly useful in applications requiring high collector current capability, high power dissipation, and operation in high-temperature environments up to 175 °C.
Key Specifications
| Type number | Package version | Package name | Size (mm) | Channel type | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | hFE [max] | TJ [max] (°C) | fT [min] (MHz) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BCP56-10H | SOT223 | SC-73 | 6.5 x 3.5 x 1.65 | NPN | 725.0 | 80.0 | 1000.0 | 63.0 | 160.0 | 175 | 100.0 | Yes |
Key Features
- High collector current capability of up to 1 A.
- High power dissipation capability with a total power dissipation of 725 mW.
- High-temperature operation up to 175 °C, making it suitable for demanding environments.
- Three current gain selections (hFE) with a minimum of 63 and a maximum of 160.
- Compact SOT223 (SC-73) package for enhanced thermal performance and ease of integration.
- Automotive qualified, ensuring reliability in automotive applications.
Applications
- Switching circuits: Ideal for high-speed switching applications in various electronic circuits.
- Amplification: Used as a small-signal amplifier in audio and electronic systems.
- Power management: Suitable for power management and control circuits.
- Linear voltage regulators: Can be used in linear voltage regulator circuits.
- MOSFET drivers: Can drive MOSFETs in power management systems.
- Low-side switches: Used in low-side switching applications.
- Battery-driven devices: Suitable for battery-driven devices due to its efficient power handling.
Q & A
- Q: What is the maximum collector-emitter voltage of the BCP56-10H,115?
A: The maximum collector-emitter voltage (VCEO) is 80 V.
- Q: What is the maximum collector current of the BCP56-10H,115?
A: The maximum collector current (IC) is 1 A.
- Q: What is the package type of the BCP56-10H,115?
A: The transistor is housed in a SOT223 (SC-73) package.
- Q: What is the maximum junction temperature of the BCP56-10H,115?
A: The maximum junction temperature (TJ) is 175 °C.
- Q: Is the BCP56-10H,115 automotive qualified?
A: Yes, the BCP56-10H,115 is automotive qualified.
- Q: What are the typical applications of the BCP56-10H,115?
A: It is used in switching circuits, amplification, power management, linear voltage regulators, MOSFET drivers, and low-side switches.
- Q: How does the BCP56-10H,115 work in a circuit?
A: It works as an electronic switch or amplifier, controlling the flow of current from the collector to the emitter based on the current flowing into its base terminal.
- Q: What is the minimum current gain (hFE) of the BCP56-10H,115?
A: The minimum current gain (hFE) is 63.
- Q: Can the BCP56-10H,115 be used in high-frequency applications?
A: While it is not specifically designed for high-frequency applications, it can be used in moderate-frequency circuits within its specified frequency range.
- Q: What is the total power dissipation of the BCP56-10H,115?
A: The total power dissipation (Ptot) is 725 mW.
