PMBT3906M,315
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Nexperia USA Inc. PMBT3906M,315

Manufacturer No:
PMBT3906M,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 40V 0.2A SOT883
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMBT3906MB,315 is a 40 V, 200 mA PNP switching transistor manufactured by Nexperia USA Inc. This transistor is packaged in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. It is designed for high-performance switching applications and is part of Nexperia's extensive portfolio of bipolar transistors, which are used across various industries including automotive, industrial, mobile, and consumer electronics.

Key Specifications

ParameterValue
Type numberPMBT3906MB
PackageDFN1006B-3 (SOT883B)
Package size (mm)1 x 0.6 x 0.37
Channel typePNP
VCEO [max] (V)-40.0
IC [max] (mA)-200.0
hFE [max]300.0
hFE [min]100.0
fT [min] (MHz)250.0
toff (ns)300.0
Ptot [max] (mW)250.0

Key Features

  • High collector-emitter voltage (VCEO) of 40 V.
  • High collector current (IC) of 200 mA.
  • High current gain (hFE) with a minimum value of 100 and a maximum value of 300.
  • Small footprint with a leadless ultra small DFN1006B-3 (SOT883B) package.
  • Low power consumption with a maximum total power dissipation (Ptot) of 250 mW.
  • Fast switching times with a minimum transition frequency (fT) of 250 MHz and a turn-off time (toff) of 300 ns.

Applications

The PMBT3906MB,315 transistor is versatile and can be used in a variety of applications across different industries. These include:

  • Automotive systems: For switching and amplification in vehicle electronics.
  • Industrial control systems: For high-reliability switching and amplification tasks.
  • Mobile and consumer electronics: For power management and signal switching.
  • Power and computing systems: For efficient power switching and amplification.
  • Wearables and IoT devices: For compact and low-power switching solutions.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the PMBT3906MB,315 transistor?
    The maximum collector-emitter voltage (VCEO) is 40 V.
  2. What is the maximum collector current (IC) of the PMBT3906MB,315 transistor?
    The maximum collector current (IC) is 200 mA.
  3. What is the package type of the PMBT3906MB,315 transistor?
    The package type is DFN1006B-3 (SOT883B), which is a leadless ultra small SMD plastic package.
  4. What are the typical applications of the PMBT3906MB,315 transistor?
    The transistor is used in automotive, industrial, mobile, consumer electronics, power systems, and wearables.
  5. What is the minimum current gain (hFE) of the PMBT3906MB,315 transistor?
    The minimum current gain (hFE) is 100.
  6. What is the maximum total power dissipation (Ptot) of the PMBT3906MB,315 transistor?
    The maximum total power dissipation (Ptot) is 250 mW.
  7. How fast is the switching time of the PMBT3906MB,315 transistor?
    The transistor has a minimum transition frequency (fT) of 250 MHz and a turn-off time (toff) of 300 ns.
  8. Is the PMBT3906MB,315 transistor RoHS compliant?
    Yes, the PMBT3906MB,315 transistor is RoHS compliant.
  9. Where can I purchase the PMBT3906MB,315 transistor?
    You can purchase the transistor from various distributors such as Arrow, Avnet, Digi-Key, Mouser Electronics, and more.
  10. What is the NPN complement of the PMBT3906MB transistor?
    The NPN complement of the PMBT3906MB transistor is the PMBT3904MB.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:590 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-101, SOT-883
Supplier Device Package:SOT-883
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Similar Products

Part Number PMBT3906M,315 PMBT3906MB,315 PMBT3904M,315
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type PNP PNP NPN
Current - Collector (Ic) (Max) 200 mA 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO) 500nA (ICBO) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 590 mW 250 mW 590 mW
Frequency - Transition 250MHz 250MHz 300MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-101, SOT-883 3-XFDFN SC-101, SOT-883
Supplier Device Package SOT-883 DFN1006B-3 SOT-883

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