BCP53-10,135
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Nexperia USA Inc. BCP53-10,135

Manufacturer No:
BCP53-10,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 80V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP53-10,135 is a single PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for various automotive and industrial applications, offering high reliability and efficient power handling.

It is part of the BCP53 series, which features medium power transistors in the industry-standard SOT223 (SC-73) surface-mount package. The BCP53-10,135 is AEC-Q100 qualified, ensuring its suitability for demanding automotive environments.

Key Specifications

Parameter Conditions Min Max Unit
Collector-Emitter Voltage (VCEO) Open base - - 80 V
Collector Current (IC) - - - 1 A
Peak Collector Current (ICM) Single pulse; tp ≤ 1 ms - - 2 A
DC Current Gain (hFE) VCE = -2 V; IC = -150 mA 63 - 160 -
Collector-Emitter Saturation Voltage (VCEsat) IC = -500 mA; IB = -50 mA - - 0.5 V
Transition Frequency (fT) VCE = -5 V; IC = -50 mA; f = 100 MHz - - 145 MHz
Collector-Base Cut-off Current (ICBO) VCB = -30 V; IE = 0 A; Tj = 150 °C - - 10 µA
Operating Temperature Range - - - -150 °C

Key Features

  • High power handling up to 1 W
  • High collector-emitter breakdown voltage of 80 V
  • High collector current capability of 1 A
  • Low collector-emitter saturation voltage of 500 mV @ 500 mA
  • High DC current gain of 63 @ 150 mA, 2 V
  • High transition frequency of 145 MHz
  • AEC-Q100 qualified for automotive applications
  • Wide operating temperature range up to 150°C
  • RoHS3 compliant and lead-free
  • Packaged in the industry-standard SOT223 surface mount package

Applications

  • Automotive electronics
  • Power supplies
  • Switching and amplification circuits
  • Industrial control systems
  • Linear voltage regulators
  • High-side switches
  • Battery-driven devices
  • Power management
  • MOSFET drivers
  • Amplifiers

Q & A

  1. What is the collector-emitter breakdown voltage of the BCP53-10,135 transistor?

    The collector-emitter breakdown voltage (VCEO) is up to 80 V.

  2. What is the maximum collector current of the BCP53-10,135 transistor?

    The maximum collector current (IC) is 1 A.

  3. What is the DC current gain (hFE) of the BCP53-10,135 transistor?

    The DC current gain (hFE) is 63 @ 150 mA, 2 V.

  4. What is the transition frequency (fT) of the BCP53-10,135 transistor?

    The transition frequency (fT) is 145 MHz.

  5. Is the BCP53-10,135 transistor AEC-Q100 qualified?

    Yes, the BCP53-10,135 transistor is AEC-Q100 qualified for automotive applications.

  6. What is the operating temperature range of the BCP53-10,135 transistor?

    The operating temperature range is up to 150°C.

  7. What package type is the BCP53-10,135 transistor available in?

    The transistor is packaged in the industry-standard SOT223 (SC-73) surface mount package.

  8. Is the BCP53-10,135 transistor RoHS compliant?

    Yes, the BCP53-10,135 transistor is RoHS3 compliant and lead-free.

  9. What are some common applications of the BCP53-10,135 transistor?

  10. What is the collector-emitter saturation voltage (VCEsat) of the BCP53-10,135 transistor?

    The collector-emitter saturation voltage (VCEsat) is up to 0.5 V at IC = -500 mA and IB = -50 mA.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:1 W
Frequency - Transition:145MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number BCP53-10,135 BCP54-10,135 BCP56-10,135 BCP53-16,135 BCP51-10,135 BCP52-10,135 BCP53-10,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active Active
Transistor Type PNP NPN NPN PNP PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 45 V 80 V 80 V 45 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 1 W 650 mW 960 mW 1 W 1 W 1.3 W 1 W
Frequency - Transition 145MHz 180MHz 180MHz 145MHz 145MHz 145MHz 145MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 SOT-223

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