BC857CQAZ
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Nexperia USA Inc. BC857CQAZ

Manufacturer No:
BC857CQAZ
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
TRANS PNP 45V 0.1A DFN1010D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857CQAZ is a PNP general-purpose transistor produced by Nexperia USA Inc. This component is part of Nexperia's extensive portfolio of bipolar transistors, designed to meet a wide range of electronic design needs. The BC857CQAZ is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for applications where space is limited.

Key Specifications

ParameterValueUnit
Type NumberBC857C-
PackageSOT23 (TO-236AB)-
Channel TypePNP-
VCEO [max]65V
IC [max]100mA
Ptot250mW
TJ [max]150°C
fT [min]100MHz
hFE [min]420-
hFE [max]800-
Automotive QualifiedNo-

Key Features

  • Low Current and Voltage: The BC857CQAZ operates with a maximum current of 100 mA and a maximum voltage of 65 V, making it suitable for low-power applications.
  • Compact Package: Housed in a SOT23 (TO-236AB) package, this transistor is ideal for designs where space is a constraint.
  • General-Purpose Switching and Amplification: This transistor is versatile and can be used for both switching and amplification in various electronic circuits.
  • High Current Gain: With a minimum current gain (hFE) of 420 and a maximum of 800, it ensures reliable performance in a variety of applications.

Applications

The BC857CQAZ is widely used in various electronic designs across different industries, including:

  • Automotive Electronics: Although not automotive qualified, it can be used in non-critical automotive applications where general-purpose transistors are required.
  • Industrial Electronics: Suitable for use in industrial control systems, motor control, and other low-power industrial applications.
  • Consumer Electronics: Used in audio amplifiers, switching circuits, and other consumer electronic devices.
  • Mobile and Wearable Devices: Its compact size and low power consumption make it a good fit for mobile and wearable device applications.

Q & A

  1. What is the maximum voltage rating of the BC857CQAZ transistor?
    The maximum voltage rating (VCEO) of the BC857CQAZ transistor is 65 V.
  2. What is the maximum current rating of the BC857CQAZ transistor?
    The maximum current rating (IC) of the BC857CQAZ transistor is 100 mA.
  3. In what package is the BC857CQAZ transistor available?
    The BC857CQAZ transistor is available in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
  4. Is the BC857CQAZ transistor automotive qualified?
    No, the BC857CQAZ transistor is not automotive qualified.
  5. What are the typical applications of the BC857CQAZ transistor?
    The BC857CQAZ transistor is used in general-purpose switching and amplification in various electronic circuits, including automotive, industrial, consumer electronics, and mobile devices.
  6. What is the current gain range of the BC857CQAZ transistor?
    The current gain (hFE) of the BC857CQAZ transistor ranges from 420 to 800.
  7. What is the maximum junction temperature of the BC857CQAZ transistor?
    The maximum junction temperature (TJ) of the BC857CQAZ transistor is 150°C.
  8. How does the BC857CQAZ transistor compare to its NPN complement?
    The BC857CQAZ transistor has an NPN complement, the BC847C, which shares similar specifications but with an NPN configuration.
  9. Where can I find more detailed specifications and datasheets for the BC857CQAZ transistor?
    You can find detailed specifications and datasheets for the BC857CQAZ transistor on the Nexperia website or through authorized distributors like Digi-Key and JAK Electronics.
  10. Can I order samples of the BC857CQAZ transistor?
    Yes, you can order samples of the BC857CQAZ transistor through Nexperia's sales organization or their network of global and regional distributors.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:280 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1010D-3
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Similar Products

Part Number BC857CQAZ BC857CQCZ BC857CQBZ BC857BQAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP Semiconductors
Product Status Active Active Obsolete Active
Transistor Type PNP PNP - PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 850mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 280 mW 360 mW 340 mW 280 mW
Frequency - Transition 100MHz 100MHz - 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1010D-3 DFN1412D-3 DFN1110D-3 DFN1010D-3

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