BC857BQAZ
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NXP Semiconductors BC857BQAZ

Manufacturer No:
BC857BQAZ
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
NEXPERIA BC857 - 45 V, 100 MA PN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BQAZ is a PNP general-purpose bipolar junction transistor (BJT) manufactured by NXP Semiconductors. This transistor is part of the BC857 series, known for its reliability and versatility in various electronic applications. The BC857BQAZ is packaged in a surface-mount DFN1010D-3 format, making it suitable for modern PCB designs that require compact and efficient components.

Key Specifications

ParameterValueUnit
Collector-Base Breakdown Voltage (VBRCBO)-50V
Collector-Emitter Breakdown Voltage (VBRCEO)-45V
Emitter-Base Breakdown Voltage (VBREBO)-5V
Collector Current (IC)100mA
Peak Collector Current (ICM)200mA
Peak Base Current (IBM)200mA
DC Current Gain (hFE)125 - 800
Collector-Emitter Saturation Voltage (VCEsat)-250 to -650mV
Base-Emitter Saturation Voltage (VBEsat)-850mV
Total Power Dissipation (Ptot)250mW
Junction Temperature (Tj)-150°C
Ambient Temperature (Tamb)-65 to 150°C
Storage Temperature (Tstg)-65 to 150°C

Key Features

  • Low current capability up to 100 mA.
  • Low voltage operation up to 45 V.
  • High DC current gain (hFE) ranging from 125 to 800.
  • Compact surface-mount DFN1010D-3 package.
  • Low collector-emitter saturation voltage (VCEsat) and base-emitter saturation voltage (VBEsat).
  • High total power dissipation of 250 mW.

Applications

The BC857BQAZ transistor is suitable for a variety of general-purpose switching and amplification applications. It is commonly used in:

  • General-purpose switching circuits.
  • Amplifier circuits.
  • Automotive electronics.
  • Consumer electronics.
  • Industrial control systems.

Q & A

  1. What is the maximum collector current of the BC857BQAZ transistor?
    The maximum collector current is 100 mA.
  2. What is the maximum collector-emitter breakdown voltage of the BC857BQAZ transistor?
    The maximum collector-emitter breakdown voltage is -45 V.
  3. What is the typical DC current gain (hFE) of the BC857BQAZ transistor?
    The DC current gain (hFE) ranges from 125 to 800.
  4. What is the package type of the BC857BQAZ transistor?
    The transistor is packaged in a surface-mount DFN1010D-3 format.
  5. What are the typical applications of the BC857BQAZ transistor?
    The transistor is used in general-purpose switching and amplification, automotive electronics, consumer electronics, and industrial control systems.
  6. What is the maximum junction temperature for the BC857BQAZ transistor?
    The maximum junction temperature is 150°C.
  7. What is the total power dissipation of the BC857BQAZ transistor?
    The total power dissipation is 250 mW.
  8. What is the emitter-base breakdown voltage of the BC857BQAZ transistor?
    The emitter-base breakdown voltage is -5 V.
  9. Can the BC857BQAZ transistor be used in high-frequency applications?
    Yes, it can be used in applications up to 100 MHz.
  10. Is the BC857BQAZ transistor suitable for high-power applications?
    No, it is not suitable for high-power applications due to its low current and voltage ratings.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:280 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1010D-3
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Similar Products

Part Number BC857BQAZ BC857BQCZ BC857CQAZ BC857BQBZ BC857AQAZ
Manufacturer NXP Semiconductors Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Active Active Obsolete Active
Transistor Type PNP PNP PNP - PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 850mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 280 mW 360 mW 280 mW 340 mW 280 mW
Frequency - Transition 100MHz 100MHz 100MHz - 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount, Wettable Flank Surface Mount Surface Mount, Wettable Flank Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1010D-3 DFN1412D-3 DFN1010D-3 DFN1110D-3 DFN1010D-3

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