Overview
The BC857BQAZ is a PNP general-purpose bipolar junction transistor (BJT) manufactured by NXP Semiconductors. This transistor is part of the BC857 series, known for its reliability and versatility in various electronic applications. The BC857BQAZ is packaged in a surface-mount DFN1010D-3 format, making it suitable for modern PCB designs that require compact and efficient components.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Breakdown Voltage (VBRCBO) | -50 | V |
| Collector-Emitter Breakdown Voltage (VBRCEO) | -45 | V |
| Emitter-Base Breakdown Voltage (VBREBO) | -5 | V |
| Collector Current (IC) | 100 | mA |
| Peak Collector Current (ICM) | 200 | mA |
| Peak Base Current (IBM) | 200 | mA |
| DC Current Gain (hFE) | 125 - 800 | |
| Collector-Emitter Saturation Voltage (VCEsat) | -250 to -650 | mV |
| Base-Emitter Saturation Voltage (VBEsat) | -850 | mV |
| Total Power Dissipation (Ptot) | 250 | mW |
| Junction Temperature (Tj) | -150 | °C |
| Ambient Temperature (Tamb) | -65 to 150 | °C |
| Storage Temperature (Tstg) | -65 to 150 | °C |
Key Features
- Low current capability up to 100 mA.
- Low voltage operation up to 45 V.
- High DC current gain (hFE) ranging from 125 to 800.
- Compact surface-mount DFN1010D-3 package.
- Low collector-emitter saturation voltage (VCEsat) and base-emitter saturation voltage (VBEsat).
- High total power dissipation of 250 mW.
Applications
The BC857BQAZ transistor is suitable for a variety of general-purpose switching and amplification applications. It is commonly used in:
- General-purpose switching circuits.
- Amplifier circuits.
- Automotive electronics.
- Consumer electronics.
- Industrial control systems.
Q & A
- What is the maximum collector current of the BC857BQAZ transistor?
The maximum collector current is 100 mA. - What is the maximum collector-emitter breakdown voltage of the BC857BQAZ transistor?
The maximum collector-emitter breakdown voltage is -45 V. - What is the typical DC current gain (hFE) of the BC857BQAZ transistor?
The DC current gain (hFE) ranges from 125 to 800. - What is the package type of the BC857BQAZ transistor?
The transistor is packaged in a surface-mount DFN1010D-3 format. - What are the typical applications of the BC857BQAZ transistor?
The transistor is used in general-purpose switching and amplification, automotive electronics, consumer electronics, and industrial control systems. - What is the maximum junction temperature for the BC857BQAZ transistor?
The maximum junction temperature is 150°C. - What is the total power dissipation of the BC857BQAZ transistor?
The total power dissipation is 250 mW. - What is the emitter-base breakdown voltage of the BC857BQAZ transistor?
The emitter-base breakdown voltage is -5 V. - Can the BC857BQAZ transistor be used in high-frequency applications?
Yes, it can be used in applications up to 100 MHz. - Is the BC857BQAZ transistor suitable for high-power applications?
No, it is not suitable for high-power applications due to its low current and voltage ratings.
