BC857AQAZ
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NXP USA Inc. BC857AQAZ

Manufacturer No:
BC857AQAZ
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA BC857AQA SMALL SIGN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857AQAZ is a PNP bipolar junction transistor (BJT) manufactured by NXP USA Inc. This transistor is designed for general-purpose amplification and switching applications. It features a surface mount DFN1010D-3 package, making it suitable for compact and high-density electronic designs.

Key Specifications

ParameterValueUnit
Transistor TypePNP Bipolar Junction Transistor-
Collector-Base Voltage (VCBO)45V
Collector Current (IC)100mA
Collector-Emitter Voltage (VCE)45V
Emitter-Base Voltage (VEB)5V
Frequency (fT)100MHz
Power Dissipation (PD)280mW
Package TypeSurface Mount DFN1010D-3-

Key Features

  • High current gain (hFE) for reliable amplification.
  • Low collector-emitter saturation voltage (VCE(sat)) for efficient switching.
  • Compact surface mount DFN1010D-3 package for high-density designs.
  • Wide operating temperature range from -55°C to +150°C.
  • Low thermal resistance for better heat dissipation.

Applications

The BC857AQAZ transistor is suitable for a variety of applications, including:

  • General-purpose amplification in audio and signal processing circuits.
  • Switching circuits in power supplies and motor control systems.
  • Automotive electronics for reliable operation in harsh environments.
  • Consumer electronics such as home appliances and audio equipment.

Q & A

  1. What is the collector current rating of the BC857AQAZ transistor?
    The collector current rating is 100 mA.
  2. What is the maximum collector-emitter voltage for the BC857AQAZ?
    The maximum collector-emitter voltage is 45 V.
  3. What is the frequency range of the BC857AQAZ transistor?
    The frequency range is up to 100 MHz.
  4. What type of package does the BC857AQAZ come in?
    The BC857AQAZ comes in a surface mount DFN1010D-3 package.
  5. What is the power dissipation of the BC857AQAZ transistor?
    The power dissipation is 280 mW.
  6. What are the typical applications of the BC857AQAZ transistor?
    The typical applications include general-purpose amplification, switching circuits, automotive electronics, and consumer electronics.
  7. What is the operating temperature range of the BC857AQAZ transistor?
    The operating temperature range is from -55°C to +150°C.
  8. What is the emitter-base voltage rating of the BC857AQAZ transistor?
    The emitter-base voltage rating is 5 V.
  9. Is the BC857AQAZ suitable for high-density designs?
    Yes, the compact surface mount package makes it suitable for high-density designs.
  10. Where can I purchase the BC857AQAZ transistor?
    You can purchase the BC857AQAZ from distributors like Digi-Key, Mouser, and other authorized NXP distributors.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:280 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1010D-3
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BC857AQAZ
BC857AQAZ
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BC857CQAZ
BC857CQAZ
TRANS PNP 45V 0.1A DFN1010D-3

Similar Products

Part Number BC857AQAZ BC857BQAZ BC857AQCZ BC857AQBAZ
Manufacturer NXP USA Inc. NXP Semiconductors Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Discontinued at Digi-Key
Transistor Type PNP PNP PNP -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA 850mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V 220 @ 2mA, 5V 125 @ 2mA, 5V 110 @ 2mA, 5V
Power - Max 280 mW 280 mW 360 mW 340 mW
Frequency - Transition 100MHz 100MHz 100MHz -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1010D-3 DFN1010D-3 DFN1412D-3 DFN1110D-3

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