BC857BQBZ
  • Share:

Nexperia USA Inc. BC857BQBZ

Manufacturer No:
BC857BQBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 45V 0.1A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BQBZ is a general-purpose PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is part of Nexperia's extensive portfolio of discrete semiconductors, which are widely used in various electronic designs across different industries. The BC857BQBZ is known for its reliability and performance in low-current, low-voltage applications.

Key Specifications

ParameterValue
TypePNP Bipolar Junction Transistor (BJT)
Maximum Collector Current100 mA
Maximum Collector-Emitter Voltage65 V
Maximum Power Dissipation340 mW
PackageSOT23, DFN1110D-3 (Wettable Flank)
AEC-Q101 QualificationYes, recommended for automotive applications
RoHS ComplianceYes

Key Features

  • Low current (max. 100 mA) and low voltage (max. 65 V) capabilities.
  • Qualified according to AEC-Q101, making it suitable for automotive applications.
  • General-purpose switching and amplification.
  • Surface mount package with wettable flank (DFN1110D-3) for improved soldering reliability.
  • RoHS compliant.

Applications

The BC857BQBZ transistor is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is recommended for use in automotive electronics.
  • Industrial control systems: Suitable for general-purpose switching and amplification tasks.
  • Consumer electronics: Used in various consumer devices requiring low-current, low-voltage transistor functionality.
  • Mobile and wearable devices: Its low power consumption makes it suitable for mobile and wearable applications.

Q & A

  1. What is the maximum collector current of the BC857BQBZ transistor?
    The maximum collector current is 100 mA.
  2. What is the maximum collector-emitter voltage of the BC857BQBZ transistor?
    The maximum collector-emitter voltage is 65 V.
  3. Is the BC857BQBZ transistor AEC-Q101 qualified?
    Yes, it is qualified according to AEC-Q101 and recommended for automotive applications.
  4. What package types are available for the BC857BQBZ transistor?
    The transistor is available in SOT23 and DFN1110D-3 (wettable flank) packages.
  5. Is the BC857BQBZ transistor RoHS compliant?
    Yes, it is RoHS compliant.
  6. What are the typical applications of the BC857BQBZ transistor?
    It is used in automotive, industrial, consumer electronics, mobile, and wearable devices.
  7. What is the maximum power dissipation of the BC857BQBZ transistor?
    The maximum power dissipation is 340 mW.
  8. Can the BC857BQBZ transistor be used for high-current applications?
    No, it is designed for low-current applications.
  9. How can I obtain samples of the BC857BQBZ transistor?
    Samples can be ordered through Nexperia's sales organization or through their network of global and regional distributors.
  10. What is the significance of the wettable flank package?
    The wettable flank package improves soldering reliability and is particularly useful in surface mount applications.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:340 mW
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
0 Remaining View Similar

In Stock

-
83

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC857BQBZ BC857BQCZ BC857CQBZ BC857BQAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP Semiconductors
Product Status Obsolete Active Obsolete Active
Transistor Type - PNP - PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 850mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 220 @ 2mA, 5V 420 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 340 mW 360 mW 340 mW 280 mW
Frequency - Transition - 100MHz - 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1110D-3 DFN1010D-3

Related Product By Categories

BC817-16LT1G
BC817-16LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
SMMBTA92LT1G
SMMBTA92LT1G
onsemi
TRANS PNP 300V 0.5A SOT23-3
BF820,215
BF820,215
Nexperia USA Inc.
TRANS NPN 300V 0.05A TO236AB
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
BDX34C
BDX34C
STMicroelectronics
TRANS PNP DARL 100V 10A TO220
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
BC847BWH6327XTSA1
BC847BWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
DS2003CMX/NOPB
DS2003CMX/NOPB
National Semiconductor
SMALL SIGNAL BIPOLAR TRANSISTOR,
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
BC857B/DG/B3,215
BC857B/DG/B3,215
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB

Related Product By Brand

BAS21,235
BAS21,235
Nexperia USA Inc.
DIODE GEN PURP 200V 200MA SOT23
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BCX51-16,115
BCX51-16,115
Nexperia USA Inc.
TRANS PNP 45V 1A SOT89
PDTA114EU,115
PDTA114EU,115
Nexperia USA Inc.
TRANS PREBIAS PNP 200MW SOT323
74HCT4051PW,112
74HCT4051PW,112
Nexperia USA Inc.
IC MUX/DEMUX 8X1 16TSSOP
HEF4066BT,652
HEF4066BT,652
Nexperia USA Inc.
IC SWITCH QUAD 1X1 14SOIC
74LVC126APW,112
74LVC126APW,112
Nexperia USA Inc.
IC BUF NON-INVERT 3.6V 14TSSOP
74HC540DB,112
74HC540DB,112
Nexperia USA Inc.
IC BUFFER INVERT 6V 20SSOP
74HC4050D,652
74HC4050D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SO
74HC4050DB,112
74HC4050DB,112
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SSOP
74AHC1G04GV-Q100H
74AHC1G04GV-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP SC74A
74AHC573D,118
74AHC573D,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20SOIC