BC857BQBZ
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Nexperia USA Inc. BC857BQBZ

Manufacturer No:
BC857BQBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 45V 0.1A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BQBZ is a general-purpose PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is part of Nexperia's extensive portfolio of discrete semiconductors, which are widely used in various electronic designs across different industries. The BC857BQBZ is known for its reliability and performance in low-current, low-voltage applications.

Key Specifications

ParameterValue
TypePNP Bipolar Junction Transistor (BJT)
Maximum Collector Current100 mA
Maximum Collector-Emitter Voltage65 V
Maximum Power Dissipation340 mW
PackageSOT23, DFN1110D-3 (Wettable Flank)
AEC-Q101 QualificationYes, recommended for automotive applications
RoHS ComplianceYes

Key Features

  • Low current (max. 100 mA) and low voltage (max. 65 V) capabilities.
  • Qualified according to AEC-Q101, making it suitable for automotive applications.
  • General-purpose switching and amplification.
  • Surface mount package with wettable flank (DFN1110D-3) for improved soldering reliability.
  • RoHS compliant.

Applications

The BC857BQBZ transistor is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is recommended for use in automotive electronics.
  • Industrial control systems: Suitable for general-purpose switching and amplification tasks.
  • Consumer electronics: Used in various consumer devices requiring low-current, low-voltage transistor functionality.
  • Mobile and wearable devices: Its low power consumption makes it suitable for mobile and wearable applications.

Q & A

  1. What is the maximum collector current of the BC857BQBZ transistor?
    The maximum collector current is 100 mA.
  2. What is the maximum collector-emitter voltage of the BC857BQBZ transistor?
    The maximum collector-emitter voltage is 65 V.
  3. Is the BC857BQBZ transistor AEC-Q101 qualified?
    Yes, it is qualified according to AEC-Q101 and recommended for automotive applications.
  4. What package types are available for the BC857BQBZ transistor?
    The transistor is available in SOT23 and DFN1110D-3 (wettable flank) packages.
  5. Is the BC857BQBZ transistor RoHS compliant?
    Yes, it is RoHS compliant.
  6. What are the typical applications of the BC857BQBZ transistor?
    It is used in automotive, industrial, consumer electronics, mobile, and wearable devices.
  7. What is the maximum power dissipation of the BC857BQBZ transistor?
    The maximum power dissipation is 340 mW.
  8. Can the BC857BQBZ transistor be used for high-current applications?
    No, it is designed for low-current applications.
  9. How can I obtain samples of the BC857BQBZ transistor?
    Samples can be ordered through Nexperia's sales organization or through their network of global and regional distributors.
  10. What is the significance of the wettable flank package?
    The wettable flank package improves soldering reliability and is particularly useful in surface mount applications.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:340 mW
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
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Similar Products

Part Number BC857BQBZ BC857BQCZ BC857CQBZ BC857BQAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP Semiconductors
Product Status Obsolete Active Obsolete Active
Transistor Type - PNP - PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 850mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 220 @ 2mA, 5V 420 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 340 mW 360 mW 340 mW 280 mW
Frequency - Transition - 100MHz - 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1110D-3 DFN1010D-3

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