PMZ600UNEYL
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Nexperia USA Inc. PMZ600UNEYL

Manufacturer No:
PMZ600UNEYL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 600MA DFN1006-3
Delivery:
Payment:
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Product Introduction

Overview

The PMZ600UNEYL is a small signal N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This transistor is designed for use in surface mount applications and is packaged in a SOT883 (DFN) package. It is part of Nexperia's range of small signal MOSFETs, known for their high performance and reliability in various electronic systems.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (Vds) 20 V
Drain Current (Id) 0.6 A
Drain-Source On Resistance (Rds(on)) 0.62 Ω
Power Dissipation (Pd) 360 mW (Ta), 2.7 W (Tc) mW / W
Maximum Operating Temperature 150 °C
Package Type SOT883 (DFN) -
Pin Count 3 -
Moisture Sensitivity Level 1 -
Peak Reflow Temperature 260 °C
Time @ Peak Reflow Temperature 30 s s

Key Features

  • Enhancement Mode N-Channel MOSFET: Operates in enhancement mode, suitable for switching applications.
  • Low On-Resistance: Rds(on) of 0.62 Ω, ensuring minimal power loss during operation.
  • High Drain Current: Maximum drain current of 0.6 A, making it suitable for a variety of load conditions.
  • Compact Package: SOT883 (DFN) package, ideal for space-constrained designs.
  • RoHS and Halogen-Free Compliance: Compliant with RoHS and halogen-free standards, ensuring environmental friendliness.
  • High Temperature Operation: Maximum operating temperature of 150°C, suitable for demanding environments.

Applications

  • Automotive Electronics: Suitable for use in automotive body electronics and lighting systems due to its robust performance and reliability.
  • Consumer Electronics: Can be used in various consumer electronic devices requiring efficient switching and low power consumption.
  • Industrial Control Systems: Applicable in industrial control systems where high reliability and performance are critical.
  • Power Management: Ideal for power management circuits in various electronic systems.

Q & A

  1. What is the maximum drain-source voltage of the PMZ600UNEYL MOSFET?

    The maximum drain-source voltage (Vds) is 20 V.

  2. What is the maximum drain current of the PMZ600UNEYL?

    The maximum drain current (Id) is 0.6 A.

  3. What is the on-resistance of the PMZ600UNEYL?

    The drain-source on-resistance (Rds(on)) is 0.62 Ω.

  4. What is the package type of the PMZ600UNEYL?

    The package type is SOT883 (DFN).

  5. Is the PMZ600UNEYL RoHS compliant?

    Yes, the PMZ600UNEYL is RoHS and halogen-free compliant.

  6. What is the maximum operating temperature of the PMZ600UNEYL?

    The maximum operating temperature is 150°C.

  7. What is the moisture sensitivity level of the PMZ600UNEYL?

    The moisture sensitivity level is 1.

  8. What is the peak reflow temperature for the PMZ600UNEYL?

    The peak reflow temperature is 260°C.

  9. How long can the PMZ600UNEYL be exposed to the peak reflow temperature?

    The PMZ600UNEYL can be exposed to the peak reflow temperature for up to 30 seconds.

  10. In what type of applications is the PMZ600UNEYL commonly used?

    The PMZ600UNEYL is commonly used in automotive electronics, consumer electronics, industrial control systems, and power management circuits.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:620mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.7 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:21.3 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta), 2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-883
Package / Case:SC-101, SOT-883
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Similar Products

Part Number PMZ600UNEYL PMZB600UNEYL PMZ200UNEYL PMZ600UNELYL
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V 20 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 600mA (Ta) 600mA (Ta) 1.4A (Ta) 600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V 1.2V, 4.5V 1.5V, 4.5V -
Rds On (Max) @ Id, Vgs 620mOhm @ 600mA, 4.5V 620mOhm @ 600mA, 4.5V 250mOhm @ 1.4A, 4.5V 620mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 950mV @ 250µA 950mV @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7 nC @ 4.5 V 0.7 nC @ 4.5 V 2.7 nC @ 4.5 V 0.7 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V -
Input Capacitance (Ciss) (Max) @ Vds 21.3 pF @ 10 V 21.3 pF @ 10 V 89 pF @ 15 V 21.3 pF @ 10 V
FET Feature - - - Standard
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc) 360mW (Ta), 2.7W (Tc) 350mW (Ta), 6.25W (Tc) 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-883 DFN1006B-3 SOT-883 SOT-883
Package / Case SC-101, SOT-883 3-XFDFN SC-101, SOT-883 SC-101, SOT-883

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