PMZ600UNELYL
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Nexperia USA Inc. PMZ600UNELYL

Manufacturer No:
PMZ600UNELYL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 600MA DFN1006-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMZ600UNELYL is an N-Channel MOSFET produced by Nexperia USA Inc. This component is designed for use in a variety of electronic applications, offering a balance of high performance and compact packaging. The PMZ600UNELYL is housed in a DFN1006-3L package, making it suitable for space-constrained designs while maintaining robust electrical characteristics.

Key Specifications

ParameterValue
Vds (Drain-Source Voltage)20 V
Id (Continuous Drain Current)600 mA
Ptot (Total Power Dissipation)715 mW
Rds(on) (On-State Resistance)620 mΩ @ 4.5 V, 600 mA
Vgs(th) (Threshold Voltage)950 mV @ 250 μA
PackageDFN1006-3L

Key Features

  • N-Channel MOSFET with low on-state resistance (Rds(on)) of 620 mΩ @ 4.5 V, 600 mA.
  • Compact DFN1006-3L package, ideal for space-constrained designs.
  • Continuous drain current (Id) of 600 mA and total power dissipation (Ptot) of 715 mW.
  • Threshold voltage (Vgs(th)) of 950 mV @ 250 μA.
  • ROHS compliant, ensuring environmental sustainability.

Applications

The PMZ600UNELYL MOSFET is versatile and can be used in a wide range of electronic devices and systems, including:

  • Power management circuits.
  • Switching applications.
  • Automotive electronics.
  • Consumer electronics such as smartphones, tablets, and laptops.
  • Industrial control systems.

Q & A

  1. What is the maximum drain-source voltage (Vds) of the PMZ600UNELYL?
    The maximum drain-source voltage (Vds) is 20 V.
  2. What is the continuous drain current (Id) of the PMZ600UNELYL?
    The continuous drain current (Id) is 600 mA.
  3. What is the on-state resistance (Rds(on)) of the PMZ600UNELYL?
    The on-state resistance (Rds(on)) is 620 mΩ @ 4.5 V, 600 mA.
  4. What is the threshold voltage (Vgs(th)) of the PMZ600UNELYL?
    The threshold voltage (Vgs(th)) is 950 mV @ 250 μA.
  5. In what package is the PMZ600UNELYL housed?
    The PMZ600UNELYL is housed in a DFN1006-3L package.
  6. Is the PMZ600UNELYL ROHS compliant?
    Yes, the PMZ600UNELYL is ROHS compliant.
  7. What are some typical applications of the PMZ600UNELYL?
    Typical applications include power management circuits, switching applications, automotive electronics, consumer electronics, and industrial control systems.
  8. What is the total power dissipation (Ptot) of the PMZ600UNELYL?
    The total power dissipation (Ptot) is 715 mW.
  9. Where can I find detailed specifications and datasheets for the PMZ600UNELYL?
    Detailed specifications and datasheets can be found on the Nexperia website, Digi-Key, Mouser Electronics, and other authorized distributors.
  10. Is the PMZ600UNELYL suitable for high-frequency applications?
    The PMZ600UNELYL is designed for general-purpose switching and power management applications but may not be optimized for very high-frequency operations. Refer to the datasheet for specific performance characteristics.

Product Attributes

FET Type:N-Channel
Technology:- 
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:620mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.7 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:21.3 pF @ 10 V
FET Feature:Standard
Power Dissipation (Max):2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-883
Package / Case:SC-101, SOT-883
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Similar Products

Part Number PMZ600UNELYL PMZ600UNEYL PMZB600UNELYL
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 600mA (Tc) 600mA (Ta) 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 1.2V, 4.5V 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 620mOhm @ 600mA, 4.5V 620mOhm @ 600mA, 4.5V 620mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 950mV @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7 nC @ 4.5 V 0.7 nC @ 4.5 V 0.7 nC @ 4.5 V
Vgs (Max) - ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 21.3 pF @ 10 V 21.3 pF @ 10 V 21.3 pF @ 10 V
FET Feature Standard - -
Power Dissipation (Max) 2.7W (Tc) 360mW (Ta), 2.7W (Tc) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-883 SOT-883 DFN1006B-3
Package / Case SC-101, SOT-883 SC-101, SOT-883 3-XFDFN

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