CSD18511Q5A
  • Share:

Texas Instruments CSD18511Q5A

Manufacturer No:
CSD18511Q5A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 159A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD18511Q5A is a 40 V, N-Channel NexFET™ power MOSFET designed by Texas Instruments. This device is optimized for minimizing losses in power conversion applications, featuring a low on-resistance (RDS(ON)) of 1.9 mΩ at a gate-to-source voltage (VGS) of 10 V. It is packaged in a SON 5 mm x 6 mm plastic package, which provides low thermal resistance and is suitable for various high-performance applications.

Key Specifications

ParameterTypical ValueUnit
Drain-to-Source Voltage (VDS)40V
Gate-to-Source Voltage (VGS)±20V
Continuous Drain Current (ID) - Package Limited100A
Continuous Drain Current (ID) - Silicon Limited at TC = 25°C159A
Pulsed Drain Current (IDM)400A
Power Dissipation (PD)3.1W
Gate Charge Total (Qg)63nC
Gate Charge Gate-to-Drain (Qgd)11.2nC
Drain-to-Source On-Resistance (RDS(on)) at VGS = 10 V1.9
Threshold Voltage (VGS(th))1.8V
Operating Junction and Storage Temperature Range-55 to 150°C

Key Features

  • Low RDS(ON)
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Battery Motor Control

Q & A

  1. What is the maximum drain-to-source voltage of the CSD18511Q5A?
    The maximum drain-to-source voltage (VDS) is 40 V.
  2. What is the typical on-resistance (RDS(on)) at VGS = 10 V?
    The typical on-resistance (RDS(on)) at VGS = 10 V is 1.9 mΩ.
  3. What is the operating junction and storage temperature range?
    The operating junction and storage temperature range is -55 to 150°C.
  4. Is the CSD18511Q5A RoHS compliant?
    Yes, the CSD18511Q5A is RoHS compliant.
  5. What is the package type of the CSD18511Q5A?
    The package type is SON 5 mm x 6 mm.
  6. What are the typical gate charge values?
    The typical gate charge total (Qg) is 63 nC, and the gate charge gate-to-drain (Qgd) is 11.2 nC.
  7. What are the continuous and pulsed drain current ratings?
    The continuous drain current (ID) is 100 A (package limited) and 159 A (silicon limited at TC = 25°C), and the pulsed drain current (IDM) is 400 A.
  8. What are the key applications of the CSD18511Q5A?
    The key applications include DC-DC conversion, secondary side synchronous rectifier, and battery motor control.
  9. Is the CSD18511Q5A halogen free?
    Yes, the CSD18511Q5A is halogen free.
  10. What is the lifecycle status of the CSD18511Q5A?
    The lifecycle status is active, and it is recommended for new designs.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:159A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 24A, 4.5V
Vgs(th) (Max) @ Id:2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5850 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.53
273

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number CSD18511Q5A CSD18531Q5A CSD18511Q5AT CSD18514Q5A CSD18513Q5A CSD18501Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 159A (Tc) 19A (Ta), 100A (Tc) 159A (Tc) 89A (Tc) 124A (Tc) 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 24A, 4.5V 4.6mOhm @ 22A, 10V 3.5mOhm @ 24A, 4.5V 7.9mOhm @ 15A, 10V 5.3mOhm @ 19A, 10V 3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250µA 2.3V @ 250µA 2.45V @ 250µA 2.4V @ 250µA 2.4V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 43 nC @ 10 V 63 nC @ 10 V - 61 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5850 pF @ 10 V 3840 pF @ 30 V 5850 pF @ 10 V - 4280 pF @ 20 V 3840 pF @ 20 V
FET Feature - - - - - -
Power Dissipation (Max) 104W (Tc) 3.1W (Ta), 156W (Tc) 104W (Tc) 74W (Tc) 96W (Tc) 3.1W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

ADS1248IPWR
ADS1248IPWR
Texas Instruments
IC ADC 24BIT SIGMA-DELTA 28TSSOP
TLV5535IPWR
TLV5535IPWR
Texas Instruments
IC ADC 8BIT PIPELINED 28TSSOP
LM6134AIMX/NOPB
LM6134AIMX/NOPB
Texas Instruments
IC OPAMP GP 4 CIRCUIT 14SOIC
OPA4277UA/2K5
OPA4277UA/2K5
Texas Instruments
IC OPAMP GP 4 CIRCUIT 14SOIC
SN74LVC1G97DBVRG4
SN74LVC1G97DBVRG4
Texas Instruments
IC CONFIG MULTI FUNCTION SOT23-6
LM3401MMX/NOPB
LM3401MMX/NOPB
Texas Instruments
IC LED DRVR CTRLR PWM 1A 8VSSOP
TL4050B41IDBZRG4
TL4050B41IDBZRG4
Texas Instruments
IC VREF SHUNT 0.2% SOT23-3
TPS73101DBVR
TPS73101DBVR
Texas Instruments
IC REG LIN POS ADJ 150MA SOT23-5
TPS76801QDRG4
TPS76801QDRG4
Texas Instruments
IC REG LINEAR POS ADJ 1A 8SOIC
ISO7641FCDWR
ISO7641FCDWR
Texas Instruments
DGTL ISO 2500VRMS 4CH GP 16SOIC
PTH12030LAH
PTH12030LAH
Texas Instruments
DC DC CONVERTER 0.8-1.8V
CC2590RGVR
CC2590RGVR
Texas Instruments
IC RF FRONT END 2.4GHZ 16-QFN