CSD18511Q5A
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Texas Instruments CSD18511Q5A

Manufacturer No:
CSD18511Q5A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 159A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18511Q5A is a 40 V, N-Channel NexFET™ power MOSFET designed by Texas Instruments. This device is optimized for minimizing losses in power conversion applications, featuring a low on-resistance (RDS(ON)) of 1.9 mΩ at a gate-to-source voltage (VGS) of 10 V. It is packaged in a SON 5 mm x 6 mm plastic package, which provides low thermal resistance and is suitable for various high-performance applications.

Key Specifications

ParameterTypical ValueUnit
Drain-to-Source Voltage (VDS)40V
Gate-to-Source Voltage (VGS)±20V
Continuous Drain Current (ID) - Package Limited100A
Continuous Drain Current (ID) - Silicon Limited at TC = 25°C159A
Pulsed Drain Current (IDM)400A
Power Dissipation (PD)3.1W
Gate Charge Total (Qg)63nC
Gate Charge Gate-to-Drain (Qgd)11.2nC
Drain-to-Source On-Resistance (RDS(on)) at VGS = 10 V1.9
Threshold Voltage (VGS(th))1.8V
Operating Junction and Storage Temperature Range-55 to 150°C

Key Features

  • Low RDS(ON)
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Battery Motor Control

Q & A

  1. What is the maximum drain-to-source voltage of the CSD18511Q5A?
    The maximum drain-to-source voltage (VDS) is 40 V.
  2. What is the typical on-resistance (RDS(on)) at VGS = 10 V?
    The typical on-resistance (RDS(on)) at VGS = 10 V is 1.9 mΩ.
  3. What is the operating junction and storage temperature range?
    The operating junction and storage temperature range is -55 to 150°C.
  4. Is the CSD18511Q5A RoHS compliant?
    Yes, the CSD18511Q5A is RoHS compliant.
  5. What is the package type of the CSD18511Q5A?
    The package type is SON 5 mm x 6 mm.
  6. What are the typical gate charge values?
    The typical gate charge total (Qg) is 63 nC, and the gate charge gate-to-drain (Qgd) is 11.2 nC.
  7. What are the continuous and pulsed drain current ratings?
    The continuous drain current (ID) is 100 A (package limited) and 159 A (silicon limited at TC = 25°C), and the pulsed drain current (IDM) is 400 A.
  8. What are the key applications of the CSD18511Q5A?
    The key applications include DC-DC conversion, secondary side synchronous rectifier, and battery motor control.
  9. Is the CSD18511Q5A halogen free?
    Yes, the CSD18511Q5A is halogen free.
  10. What is the lifecycle status of the CSD18511Q5A?
    The lifecycle status is active, and it is recommended for new designs.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:159A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 24A, 4.5V
Vgs(th) (Max) @ Id:2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5850 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18511Q5A CSD18531Q5A CSD18511Q5AT CSD18514Q5A CSD18513Q5A CSD18501Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 159A (Tc) 19A (Ta), 100A (Tc) 159A (Tc) 89A (Tc) 124A (Tc) 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 24A, 4.5V 4.6mOhm @ 22A, 10V 3.5mOhm @ 24A, 4.5V 7.9mOhm @ 15A, 10V 5.3mOhm @ 19A, 10V 3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250µA 2.3V @ 250µA 2.45V @ 250µA 2.4V @ 250µA 2.4V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 43 nC @ 10 V 63 nC @ 10 V - 61 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5850 pF @ 10 V 3840 pF @ 30 V 5850 pF @ 10 V - 4280 pF @ 20 V 3840 pF @ 20 V
FET Feature - - - - - -
Power Dissipation (Max) 104W (Tc) 3.1W (Ta), 156W (Tc) 104W (Tc) 74W (Tc) 96W (Tc) 3.1W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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