CSD18511Q5AT
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Texas Instruments CSD18511Q5AT

Manufacturer No:
CSD18511Q5AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 159A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18511Q5AT is a 40 V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed in a compact SON 5 × 6 mm package, making it ideal for applications where space is limited. The MOSFET is engineered to minimize losses in power conversion applications, offering low RDS(ON) and low thermal resistance. It is suitable for a wide range of operating temperatures, from -55°C to 150°C, and is RoHS compliant, Pb-free, and halogen-free.

Key Specifications

Parameter Value Unit
VDS (Drain-to-Source Voltage) 40 V
VGS (Gate-to-Source Voltage) ±20 V
ID (Continuous Drain Current, Package limited) 100 A
ID (Continuous Drain Current, Silicon limited, TC = 25°C) 159 A
IDM (Pulsed Drain Current) 400 A
RDS(on) at VGS = 4.5 V 2.7 mΩ
RDS(on) at VGS = 10 V 1.9 mΩ
VGS(th) (Gate-to-Source Threshold Voltage) 1.8 V
EAS (Avalanche Energy, Single Pulse) 157 mJ
TJ, Tstg (Operating Junction and Storage Temperature Range) -55 to 150 °C

Key Features

  • Low RDS(ON)
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Battery Motor Control

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD18511Q5AT?

    The maximum drain-to-source voltage (VDS) is 40 V.

  2. What is the typical on-resistance (RDS(on)) at VGS = 10 V?

    The typical on-resistance (RDS(on)) at VGS = 10 V is 1.9 mΩ.

  3. What is the operating temperature range of the CSD18511Q5AT?

    The operating temperature range is from -55°C to 150°C.

  4. Is the CSD18511Q5AT RoHS compliant?
  5. What is the maximum pulsed drain current (IDM)?

    The maximum pulsed drain current (IDM) is 400 A.[

  6. What are the typical gate charge values?

    The typical gate charge total (Qg) is 63 nC, and the gate charge gate-to-drain (Qgd) is 11.2 nC.[

  7. What are the common applications of the CSD18511Q5AT?
  8. What is the package type of the CSD18511Q5AT?
  9. Is the CSD18511Q5AT avalanche rated? AS) of 157 mJ.[

  10. What is the maximum continuous drain current (ID)? D) is 100 A (package limited) and 159 A (silicon limited at TC = 25°C).[

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:159A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 24A, 4.5V
Vgs(th) (Max) @ Id:2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5850 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18511Q5AT CSD18531Q5AT CSD18514Q5AT CSD18513Q5AT CSD18511Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 159A (Tc) 100A (Ta) 89A (Tc) 124A (Tc) 159A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 24A, 4.5V 4.6mOhm @ 22A, 10V 7.9mOhm @ 15A, 10V 5.3mOhm @ 19A, 10V 3.5mOhm @ 24A, 4.5V
Vgs(th) (Max) @ Id 2.45V @ 250µA 2.3V @ 250µA 2.4V @ 250µA 2.4V @ 250µA 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 43 nC @ 10 V 40 nC @ 10 V 61 nC @ 10 V 63 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5850 pF @ 10 V 3840 pF @ 30 V 2683 pF @ 20 V 4280 pF @ 20 V 5850 pF @ 10 V
FET Feature - - - - -
Power Dissipation (Max) 104W (Tc) 3.1W (Ta), 156W (Tc) 74W (Tc) 96W (Tc) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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