CSD18511Q5AT
  • Share:

Texas Instruments CSD18511Q5AT

Manufacturer No:
CSD18511Q5AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 159A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD18511Q5AT is a 40 V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed in a compact SON 5 × 6 mm package, making it ideal for applications where space is limited. The MOSFET is engineered to minimize losses in power conversion applications, offering low RDS(ON) and low thermal resistance. It is suitable for a wide range of operating temperatures, from -55°C to 150°C, and is RoHS compliant, Pb-free, and halogen-free.

Key Specifications

Parameter Value Unit
VDS (Drain-to-Source Voltage) 40 V
VGS (Gate-to-Source Voltage) ±20 V
ID (Continuous Drain Current, Package limited) 100 A
ID (Continuous Drain Current, Silicon limited, TC = 25°C) 159 A
IDM (Pulsed Drain Current) 400 A
RDS(on) at VGS = 4.5 V 2.7
RDS(on) at VGS = 10 V 1.9
VGS(th) (Gate-to-Source Threshold Voltage) 1.8 V
EAS (Avalanche Energy, Single Pulse) 157 mJ
TJ, Tstg (Operating Junction and Storage Temperature Range) -55 to 150 °C

Key Features

  • Low RDS(ON)
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Battery Motor Control

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD18511Q5AT?

    The maximum drain-to-source voltage (VDS) is 40 V.

  2. What is the typical on-resistance (RDS(on)) at VGS = 10 V?

    The typical on-resistance (RDS(on)) at VGS = 10 V is 1.9 mΩ.

  3. What is the operating temperature range of the CSD18511Q5AT?

    The operating temperature range is from -55°C to 150°C.

  4. Is the CSD18511Q5AT RoHS compliant?
  5. What is the maximum pulsed drain current (IDM)?

    The maximum pulsed drain current (IDM) is 400 A.[

  6. What are the typical gate charge values?

    The typical gate charge total (Qg) is 63 nC, and the gate charge gate-to-drain (Qgd) is 11.2 nC.[

  7. What are the common applications of the CSD18511Q5AT?
  8. What is the package type of the CSD18511Q5AT?
  9. Is the CSD18511Q5AT avalanche rated? AS) of 157 mJ.[

  10. What is the maximum continuous drain current (ID)? D) is 100 A (package limited) and 159 A (silicon limited at TC = 25°C).[

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:159A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 24A, 4.5V
Vgs(th) (Max) @ Id:2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5850 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.71
403

Please send RFQ , we will respond immediately.

Same Series
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V50/AA
DD26S2S50V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number CSD18511Q5AT CSD18531Q5AT CSD18514Q5AT CSD18513Q5AT CSD18511Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 159A (Tc) 100A (Ta) 89A (Tc) 124A (Tc) 159A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 24A, 4.5V 4.6mOhm @ 22A, 10V 7.9mOhm @ 15A, 10V 5.3mOhm @ 19A, 10V 3.5mOhm @ 24A, 4.5V
Vgs(th) (Max) @ Id 2.45V @ 250µA 2.3V @ 250µA 2.4V @ 250µA 2.4V @ 250µA 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 43 nC @ 10 V 40 nC @ 10 V 61 nC @ 10 V 63 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5850 pF @ 10 V 3840 pF @ 30 V 2683 pF @ 20 V 4280 pF @ 20 V 5850 pF @ 10 V
FET Feature - - - - -
Power Dissipation (Max) 104W (Tc) 3.1W (Ta), 156W (Tc) 74W (Tc) 96W (Tc) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

TMS320C5421GGUR200
TMS320C5421GGUR200
Texas Instruments
IC DGTL SIGNL PROCESSOR 144-BGA
MSP430G2210IDR
MSP430G2210IDR
Texas Instruments
IC MCU 16BIT 2KB FLASH 8SOIC
SN65LVDM176DGKG4
SN65LVDM176DGKG4
Texas Instruments
IC TRANSCEIVER HALF 1/1 8VSSOP
OPA4277UA/2K5
OPA4277UA/2K5
Texas Instruments
IC OPAMP GP 4 CIRCUIT 14SOIC
LMV844MT/NOPB
LMV844MT/NOPB
Texas Instruments
IC OPAMP GP 4 CIRCUIT 14TSSOP
SN74LS151NE4
SN74LS151NE4
Texas Instruments
SN74LS151 8-LINE TO 1-LINE DATA
CD4056BME4
CD4056BME4
Texas Instruments
IC DRVR 7 SEGMENT 1 DIGIT 16SOIC
TPS54550PWPG4
TPS54550PWPG4
Texas Instruments
IC REG BUCK ADJ 6A 16HTSSOP
TPS70928QDRVRQ1
TPS70928QDRVRQ1
Texas Instruments
IC REG LINEAR 2.8V 150MA 6WSON
LP2985AITL-3.3/NOPB
LP2985AITL-3.3/NOPB
Texas Instruments
IC REG LINEAR 3.3V 150MA 5DSBGA
SN74AC14NS
SN74AC14NS
Texas Instruments
INVERTER, AC SERIES, 1-FUNC, 1-I
PTH12030LAH
PTH12030LAH
Texas Instruments
DC DC CONVERTER 0.8-1.8V