CSD18514Q5AT
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Texas Instruments CSD18514Q5AT

Manufacturer No:
CSD18514Q5AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 89A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18514Q5AT is a 40-V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, featuring a low on-state resistance (RDS(on)) and low thermal resistance. It is packaged in a SON 5-mm × 6-mm plastic package, making it suitable for a variety of high-performance applications. The MOSFET is logic level, avalanche rated, and complies with RoHS and halogen-free standards, ensuring environmental sustainability and reliability.

Key Specifications

Parameter Test Conditions Typical Value Unit
VDS - Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 40 V
VGS - Gate-to-Source Voltage ±20 V
ID - Continuous Drain Current (Package Limited) 50 A
ID - Continuous Drain Current (Silicon Limited), TC = 25°C 89 A
IDM - Pulsed Drain Current 237 A
PD - Power Dissipation 3.1 W
TJ, Tstg - Operating Junction, Storage Temperature -55 to 150 °C
RDS(on) - Drain-to-Source On Resistance (VGS = 10 V, ID = 14 A) 4.1 mΩ
VGS(th) - Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 1.8 V
Qg - Gate Charge Total (10 V) VDS = 20 V, ID = 14 A 29 nC
Qgd - Gate Charge Gate-to-Drain 5.0 nC

Key Features

  • Low RDS(on) of 4.1 mΩ at VGS = 10 V, ID = 14 A
  • Low thermal resistance
  • Avalanche rated for robust operation
  • Logic level for easy integration with digital circuits
  • Lead-free terminal plating and RoHS compliant
  • Halogen free for environmental sustainability
  • SON 5-mm × 6-mm plastic package for compact design

Applications

  • DC-DC conversion
  • Secondary side synchronous rectifier
  • Battery motor control

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD18514Q5AT?

    The maximum drain-to-source voltage (VDS) is 40 V.

  2. What is the typical on-state resistance (RDS(on)) at VGS = 10 V and ID = 14 A?

    The typical on-state resistance (RDS(on)) is 4.1 mΩ.

  3. What is the gate-to-source threshold voltage (VGS(th))?

    The gate-to-source threshold voltage (VGS(th)) is typically 1.8 V.

  4. What is the maximum continuous drain current (ID) for the package?

    The maximum continuous drain current (ID) for the package is 50 A.

  5. What is the maximum pulsed drain current (IDM)?

    The maximum pulsed drain current (IDM) is 237 A.

  6. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to 150°C.

  7. Is the CSD18514Q5AT RoHS compliant and halogen free?

    Yes, the CSD18514Q5AT is RoHS compliant and halogen free.

  8. What are the common applications of the CSD18514Q5AT?

    Common applications include DC-DC conversion, secondary side synchronous rectifier, and battery motor control.

  9. What is the package type of the CSD18514Q5AT?

    The package type is SON 5-mm × 6-mm plastic package.

  10. What is the total gate charge (Qg) at VGS = 10 V?

    The total gate charge (Qg) at VGS = 10 V is typically 29 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:89A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2683 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18514Q5AT CSD18534Q5AT CSD18504Q5AT CSD18511Q5AT CSD18513Q5AT CSD18514Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 89A (Tc) 50A (Ta) 50A (Ta) 159A (Tc) 124A (Tc) 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 15A, 10V 9.8mOhm @ 14A, 10V 6.6mOhm @ 17A, 10V 3.5mOhm @ 24A, 4.5V 5.3mOhm @ 19A, 10V 7.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.3V @ 250µA 2.4V @ 250µA 2.45V @ 250µA 2.4V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 11.1 nC @ 4.5 V 9.2 nC @ 4.5 V 63 nC @ 10 V 61 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2683 pF @ 20 V 1770 pF @ 30 V 1656 pF @ 20 V 5850 pF @ 10 V 4280 pF @ 20 V -
FET Feature - - - - - -
Power Dissipation (Max) 74W (Tc) 3.1W (Ta), 77W (Tc) 3.1W (Ta), 77W (Tc) 104W (Tc) 96W (Tc) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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