CSD18514Q5AT
  • Share:

Texas Instruments CSD18514Q5AT

Manufacturer No:
CSD18514Q5AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 89A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD18514Q5AT is a 40-V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, featuring a low on-state resistance (RDS(on)) and low thermal resistance. It is packaged in a SON 5-mm × 6-mm plastic package, making it suitable for a variety of high-performance applications. The MOSFET is logic level, avalanche rated, and complies with RoHS and halogen-free standards, ensuring environmental sustainability and reliability.

Key Specifications

Parameter Test Conditions Typical Value Unit
VDS - Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 40 V
VGS - Gate-to-Source Voltage ±20 V
ID - Continuous Drain Current (Package Limited) 50 A
ID - Continuous Drain Current (Silicon Limited), TC = 25°C 89 A
IDM - Pulsed Drain Current 237 A
PD - Power Dissipation 3.1 W
TJ, Tstg - Operating Junction, Storage Temperature -55 to 150 °C
RDS(on) - Drain-to-Source On Resistance (VGS = 10 V, ID = 14 A) 4.1
VGS(th) - Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 1.8 V
Qg - Gate Charge Total (10 V) VDS = 20 V, ID = 14 A 29 nC
Qgd - Gate Charge Gate-to-Drain 5.0 nC

Key Features

  • Low RDS(on) of 4.1 mΩ at VGS = 10 V, ID = 14 A
  • Low thermal resistance
  • Avalanche rated for robust operation
  • Logic level for easy integration with digital circuits
  • Lead-free terminal plating and RoHS compliant
  • Halogen free for environmental sustainability
  • SON 5-mm × 6-mm plastic package for compact design

Applications

  • DC-DC conversion
  • Secondary side synchronous rectifier
  • Battery motor control

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD18514Q5AT?

    The maximum drain-to-source voltage (VDS) is 40 V.

  2. What is the typical on-state resistance (RDS(on)) at VGS = 10 V and ID = 14 A?

    The typical on-state resistance (RDS(on)) is 4.1 mΩ.

  3. What is the gate-to-source threshold voltage (VGS(th))?

    The gate-to-source threshold voltage (VGS(th)) is typically 1.8 V.

  4. What is the maximum continuous drain current (ID) for the package?

    The maximum continuous drain current (ID) for the package is 50 A.

  5. What is the maximum pulsed drain current (IDM)?

    The maximum pulsed drain current (IDM) is 237 A.

  6. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to 150°C.

  7. Is the CSD18514Q5AT RoHS compliant and halogen free?

    Yes, the CSD18514Q5AT is RoHS compliant and halogen free.

  8. What are the common applications of the CSD18514Q5AT?

    Common applications include DC-DC conversion, secondary side synchronous rectifier, and battery motor control.

  9. What is the package type of the CSD18514Q5AT?

    The package type is SON 5-mm × 6-mm plastic package.

  10. What is the total gate charge (Qg) at VGS = 10 V?

    The total gate charge (Qg) at VGS = 10 V is typically 29 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:89A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2683 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.63
361

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Similar Products

Part Number CSD18514Q5AT CSD18534Q5AT CSD18504Q5AT CSD18511Q5AT CSD18513Q5AT CSD18514Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 89A (Tc) 50A (Ta) 50A (Ta) 159A (Tc) 124A (Tc) 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 15A, 10V 9.8mOhm @ 14A, 10V 6.6mOhm @ 17A, 10V 3.5mOhm @ 24A, 4.5V 5.3mOhm @ 19A, 10V 7.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.3V @ 250µA 2.4V @ 250µA 2.45V @ 250µA 2.4V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 11.1 nC @ 4.5 V 9.2 nC @ 4.5 V 63 nC @ 10 V 61 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2683 pF @ 20 V 1770 pF @ 30 V 1656 pF @ 20 V 5850 pF @ 10 V 4280 pF @ 20 V -
FET Feature - - - - - -
Power Dissipation (Max) 74W (Tc) 3.1W (Ta), 77W (Tc) 3.1W (Ta), 77W (Tc) 104W (Tc) 96W (Tc) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

DP83848T-MAU-EK
DP83848T-MAU-EK
Texas Instruments
BOARD EVALUATION DP83848T
TLV2548QDWRG4
TLV2548QDWRG4
Texas Instruments
IC ADC 12BIT SAR 20SOIC
DAC121C085CIMMX/NOPB
DAC121C085CIMMX/NOPB
Texas Instruments
IC DAC 12BIT V-OUT 8VSSOP
TMS320F28377DGWTEP
TMS320F28377DGWTEP
Texas Instruments
NPI SOPRANO IHR4 RTM 12/31
AM5726BABCXEA
AM5726BABCXEA
Texas Instruments
SITARA PROCESSOR
MUX508IDR
MUX508IDR
Texas Instruments
IC MULTIPLEXER 8CH 16SOIC
TLV2711IDBVR
TLV2711IDBVR
Texas Instruments
IC OPAMP GP 1 CIRCUIT SOT23-5
OPA340NA/250G4
OPA340NA/250G4
Texas Instruments
IC OPAMP GP 1 CIRCUIT SOT23-5
TL3016ID
TL3016ID
Texas Instruments
IC HS LP COMP 8-SOIC
CD74HC14M96
CD74HC14M96
Texas Instruments
IC INV SCHMITT 6CH 1-IN 14SOIC
TPS54550PWPG4
TPS54550PWPG4
Texas Instruments
IC REG BUCK ADJ 6A 16HTSSOP
ISO7761FDBQR
ISO7761FDBQR
Texas Instruments
DGTL ISO 3000VRMS 6CH GP 16SSOP