CSD18504Q5AT
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Texas Instruments CSD18504Q5AT

Manufacturer No:
CSD18504Q5AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 50A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The CSD18504Q5AT is a high-performance N-channel MOSFET produced by Texas Instruments. Designed for power management applications, this MOSFET is part of the NexFET™ Power MOSFET series, known for its low on-resistance and high efficiency. The CSD18504Q5AT is specifically targeted at applications requiring high power density and thermal performance, such as DC-DC converters, motor drives, and power supplies. Its compact package and superior electrical characteristics make it a competitive choice for engineers in the automotive, industrial, and consumer electronics sectors.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)40VMaximum
Continuous Drain Current (ID)47AAt TC = 25°C
On-Resistance (RDS(on))3.6At VGS = 10V
Gate-Source Voltage (VGS)±20VMaximum
Power Dissipation (PD)94WAt TC = 25°C
PackageSON 5x6-Compact and thermally efficient
Operating Temperature Range-55 to 150°CWide range for diverse applications

Key Features

  • Low On-Resistance: Minimizes conduction losses, enhancing efficiency in power applications.
  • High Current Handling: Supports up to 47A continuous drain current, ideal for high-power designs.
  • Compact Package: SON 5x6 package offers excellent thermal performance and space-saving benefits.
  • Robust Thermal Performance: Designed to operate efficiently in a wide temperature range (-55°C to 150°C).
  • Optimized for Fast Switching: Enables high-frequency operation in DC-DC converters and motor drives.

Applications

The CSD18504Q5AT is widely used in various high-power applications, including:

  • DC-DC Converters: Provides efficient power conversion in step-up or step-down circuits.
  • Motor Drives: Ensures reliable and efficient control of motors in industrial and automotive systems.
  • Power Supplies: Enhances performance in switch-mode power supplies (SMPS).
  • Automotive Electronics: Suitable for automotive power management systems due to its robustness and thermal efficiency.
  • Consumer Electronics: Used in high-performance devices requiring compact and efficient power solutions.

Q & A

1. What is the maximum drain-source voltage for the CSD18504Q5AT?

The maximum drain-source voltage (VDS) is 40V.

2. What is the continuous drain current rating of this MOSFET?

The continuous drain current (ID) is 47A at a case temperature of 25°C.

3. What is the typical on-resistance (RDS(on)) of the CSD18504Q5AT?

The typical on-resistance is 3.6mΩ at a gate-source voltage (VGS) of 10V.

4. What package does the CSD18504Q5AT come in?

It comes in a SON 5x6 package, which is compact and thermally efficient.

5. What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

6. Is the CSD18504Q5AT suitable for automotive applications?

Yes, its robust design and thermal efficiency make it suitable for automotive power management systems.

7. What are the key advantages of the CSD18504Q5AT?

Key advantages include low on-resistance, high current handling, compact packaging, and excellent thermal performance.

8. Can this MOSFET be used in high-frequency switching applications?

Yes, it is optimized for fast switching, making it ideal for high-frequency applications like DC-DC converters.

9. What is the maximum gate-source voltage (VGS) for the CSD18504Q5AT?

The maximum gate-source voltage is ±20V.

10. Where can I find detailed technical specifications for the CSD18504Q5AT?

Detailed specifications can be found in the official datasheet provided by Texas Instruments or on distributor websites like Digi-Key, Mouser, or Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:50A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.2 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1656 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 77W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18504Q5AT CSD18534Q5AT CSD18514Q5AT CSD18503Q5AT CSD18504Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 50A (Ta) 50A (Ta) 89A (Tc) 100A (Tc) 15A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.6mOhm @ 17A, 10V 9.8mOhm @ 14A, 10V 7.9mOhm @ 15A, 10V 4.3mOhm @ 22A, 10V 6.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.3V @ 250µA 2.4V @ 250µA 2.3V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.2 nC @ 4.5 V 11.1 nC @ 4.5 V 40 nC @ 10 V 16 nC @ 4.5 V 19 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1656 pF @ 20 V 1770 pF @ 30 V 2683 pF @ 20 V 2640 pF @ 20 V 1656 pF @ 20 V
FET Feature - - - - -
Power Dissipation (Max) 3.1W (Ta), 77W (Tc) 3.1W (Ta), 77W (Tc) 74W (Tc) 3.1W (Ta), 120W (Tc) 3.1W (Ta), 77W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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