CSD18504Q5A
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Texas Instruments CSD18504Q5A

Manufacturer No:
CSD18504Q5A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 15A/50A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18504Q5A is a high-performance N-channel MOSFET produced by Texas Instruments. Designed for power management applications, this component is part of the NexFET™ power MOSFET series, known for its efficiency and reliability. The CSD18504Q5A is particularly suited for high-frequency switching applications, offering low on-resistance and high current handling capabilities. Its target user groups include designers and engineers working in power electronics, such as DC-DC converters, motor drives, and load switches.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)40V
Continuous Drain Current (ID)100A
On-Resistance (RDS(on))1.8mΩ@ VGS = 10V
Gate-Source Voltage (VGS)±20V
Power Dissipation (PD)238W
Operating Junction Temperature (TJ)-55 to 150°C
PackageSON5x6mm

Key Features

  • Low On-Resistance: Minimizes conduction losses, enhancing efficiency.
  • High Current Handling: Supports up to 100A continuous drain current, ideal for high-power applications.
  • Optimized for High-Frequency Switching: Reduces switching losses, improving performance in fast-switching circuits.
  • Thermal Efficiency: Designed to operate efficiently within a wide temperature range, ensuring reliability under varying conditions.

Applications

The CSD18504Q5A is widely used in various power management applications, including:

  • DC-DC Converters: Enhances efficiency and reduces heat generation in step-up/step-down converters.
  • Motor Drives: Provides reliable switching for motor control circuits in industrial and automotive systems.
  • Load Switches: Ensures efficient power distribution in battery-powered devices and portable electronics.
  • Power Supplies: Improves performance in switched-mode power supplies (SMPS) and other power conversion systems.

Q & A

1. What is the maximum drain-source voltage for the CSD18504Q5A?

The maximum drain-source voltage (VDS) is 40V.

2. What is the continuous drain current rating?

The continuous drain current (ID) is rated at 100A.

3. What is the typical on-resistance?

The typical on-resistance (RDS(on)) is 1.8mΩ at a gate-source voltage (VGS) of 10V.

4. What is the operating temperature range?

The operating junction temperature (TJ) ranges from -55°C to 150°C.

5. What package does the CSD18504Q5A use?

It uses a SON package with dimensions of 5x6mm.

6. Is this MOSFET suitable for high-frequency switching?

Yes, the CSD18504Q5A is optimized for high-frequency switching applications.

7. Can it be used in automotive applications?

Yes, its robust design makes it suitable for automotive power management systems.

8. What are the key benefits of low on-resistance?

Low on-resistance reduces conduction losses, improving overall efficiency and thermal performance.

9. Is this MOSFET compatible with lead-free soldering processes?

Yes, it is compatible with lead-free soldering processes.

10. Where can I find detailed application notes for this component?

Detailed application notes can be found on the official Texas Instruments website or in the product datasheet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:15A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1656 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 77W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18504Q5A CSD18514Q5A CSD18534Q5A CSD18504Q5AT CSD18501Q5A CSD18503Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 60 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 50A (Tc) 89A (Tc) 13A (Ta), 50A (Tc) 50A (Ta) 22A (Ta), 100A (Tc) 19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.6mOhm @ 17A, 10V 7.9mOhm @ 15A, 10V 9.8mOhm @ 14A, 10V 6.6mOhm @ 17A, 10V 3.2mOhm @ 25A, 10V 4.3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 250µA 2.3V @ 250µA 2.4V @ 250µA 2.3V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V - 22 nC @ 10 V 9.2 nC @ 4.5 V 50 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1656 pF @ 20 V - 1770 pF @ 30 V 1656 pF @ 20 V 3840 pF @ 20 V 2640 pF @ 20 V
FET Feature - - - - - -
Power Dissipation (Max) 3.1W (Ta), 77W (Tc) 74W (Tc) 3.1W (Ta), 77W (Tc) 3.1W (Ta), 77W (Tc) 3.1W (Ta), 150W (Tc) 3.1W (Ta), 120W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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