CSD18534Q5A
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Texas Instruments CSD18534Q5A

Manufacturer No:
CSD18534Q5A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 13A/50A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18534Q5A is a 60-V N-channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed for high-performance applications requiring low on-resistance and high efficiency. The CSD18534Q5A is packaged in a single SON (Small Outline No-lead) package measuring 5 mm x 6 mm, making it suitable for space-constrained designs. It is part of TI's NexFET family, known for its advanced technology in power MOSFETs.

Key Specifications

ParameterValue
Voltage Rating (Vds)60 V
On-Resistance (Rds(on))9.8 mΩ (typical at Vgs = 10 V)
Package TypeSON 5 mm x 6 mm
Channel TypeN-channel
Operating Temperature Range-55°C to 150°C
Gate Threshold Voltage (Vth)2 V to 4 V (typical)

Key Features

  • Low on-resistance (Rds(on)) of 9.8 mΩ, enhancing efficiency in power applications.
  • High voltage rating of 60 V, suitable for a wide range of power management tasks.
  • Compact SON 5 mm x 6 mm package, ideal for space-constrained designs.
  • High operating temperature range from -55°C to 150°C, ensuring reliability in various environments.
  • Advanced NexFET technology for improved performance and reliability.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Automotive systems, including battery management and power distribution.
  • Consumer electronics requiring high-efficiency power management.

Q & A

  1. What is the voltage rating of the CSD18534Q5A? The voltage rating (Vds) of the CSD18534Q5A is 60 V.
  2. What is the typical on-resistance of the CSD18534Q5A? The typical on-resistance (Rds(on)) is 9.8 mΩ at Vgs = 10 V.
  3. What package type is used for the CSD18534Q5A? The CSD18534Q5A is packaged in a SON 5 mm x 6 mm package.
  4. What is the operating temperature range of the CSD18534Q5A? The operating temperature range is from -55°C to 150°C.
  5. What is the gate threshold voltage range of the CSD18534Q5A? The gate threshold voltage (Vth) range is typically between 2 V and 4 V.
  6. What are some common applications for the CSD18534Q5A? Common applications include power supplies, motor control, industrial automation, automotive systems, and consumer electronics.
  7. What technology does the CSD18534Q5A use? The CSD18534Q5A uses TI's advanced NexFET technology.
  8. Where can I find detailed specifications for the CSD18534Q5A? Detailed specifications can be found in the datasheet available on TI's official website and other electronic component databases.
  9. Is the CSD18534Q5A suitable for safety-critical applications? It is important to refer to the datasheet and any relevant safety notices before using the CSD18534Q5A in safety-critical applications.
  10. How can I purchase the CSD18534Q5A? The CSD18534Q5A can be purchased through various distributors listed on websites like Octopart, Digi-Key, and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1770 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 77W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18534Q5A CSD19534Q5A CSD18534Q5AT CSD18504Q5A CSD18514Q5A CSD18531Q5A CSD18533Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 100 V 60 V 40 V 40 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 50A (Tc) 50A (Ta) 50A (Ta) 15A (Ta), 50A (Tc) 89A (Tc) 19A (Ta), 100A (Tc) 17A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 6V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.8mOhm @ 14A, 10V 15.1mOhm @ 10A, 10V 9.8mOhm @ 14A, 10V 6.6mOhm @ 17A, 10V 7.9mOhm @ 15A, 10V 4.6mOhm @ 22A, 10V 5.9mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 3.4V @ 250µA 2.3V @ 250µA 2.4V @ 250µA 2.4V @ 250µA 2.3V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 22 nC @ 10 V 11.1 nC @ 4.5 V 19 nC @ 10 V - 43 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 30 V 1680 pF @ 50 V 1770 pF @ 30 V 1656 pF @ 20 V - 3840 pF @ 30 V 2750 pF @ 30 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.1W (Ta), 77W (Tc) 3.2W (Ta), 63W (Tc) 3.1W (Ta), 77W (Tc) 3.1W (Ta), 77W (Tc) 74W (Tc) 3.1W (Ta), 156W (Tc) 3.2W (Ta), 116W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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