NTD3055-094-1
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onsemi NTD3055-094-1

Manufacturer No:
NTD3055-094-1
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 60V 12A IPAK
Delivery:
Payment:
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Product Introduction

Overview

The NTD3055-094 is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for low voltage, high speed switching applications and is particularly suited for use in power supplies, converters, power motor controls, and bridge circuits. The MOSFET features a low on-resistance (RDS(on)) and is available in DPAK and IPAK packages, making it versatile for various power management needs. It is also Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Characteristic Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain-to-Gate Voltage VDGR 60 Vdc
Gate-to-Source Voltage (Continuous/Non-Repetitive) VGS -20 / 30 Vdc
Continuous Drain Current @ TA = 25°C / 100°C ID 12 / 10 A
Single Pulse Drain Current IDM 45 A
Total Power Dissipation @ TA = 25°C PD 48 W
Operating and Storage Temperature Range TJ, Tstg -55 to +175 °C
Static Drain-to-Source On-Resistance (RDS(on)) RDS(on) 94 mΩ (Typical)
Gate Threshold Voltage (VGS(th)) VGS(th) 2.0 - 2.9 V Vdc
Maximum Lead Temperature for Soldering TL 260 °C

Key Features

  • Low on-resistance (RDS(on)) of 94 mΩ (Typical)
  • Low drain-to-source on-voltage (VDS(on))
  • Low diode reverse recovery time and stored charge
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications
  • Pb-free and RoHS compliant
  • High speed switching capability
  • Available in DPAK and IPAK packages

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits
  • Automotive and other applications requiring unique site and control change requirements

Q & A

  1. What is the maximum drain-to-source voltage of the NTD3055-094 MOSFET?

    The maximum drain-to-source voltage (VDSS) is 60 Vdc.

  2. What is the continuous drain current rating at 25°C and 100°C?

    The continuous drain current (ID) is 12 A at 25°C and 10 A at 100°C.

  3. What is the typical on-resistance (RDS(on)) of the NTD3055-094?

    The typical on-resistance (RDS(on)) is 94 mΩ.

  4. Is the NTD3055-094 Pb-free and RoHS compliant?
  5. What are the typical applications of the NTD3055-094 MOSFET?

    The typical applications include power supplies, converters, power motor controls, and bridge circuits.

  6. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 260°C.

  7. Is the NTD3055-094 AEC-Q101 qualified?
  8. What are the available package types for the NTD3055-094?

    The NTD3055-094 is available in DPAK and IPAK packages.

  9. What is the operating and storage temperature range of the NTD3055-094?

    The operating and storage temperature range is -55°C to +175°C.

  10. What is the gate threshold voltage (VGS(th)) of the NTD3055-094?

    The gate threshold voltage (VGS(th)) is between 2.0 V and 2.9 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:94mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta), 48W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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MOSFET N-CH 60V 12A DPAK
NTD3055-094
NTD3055-094
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NTD3055-094-1G
NTD3055-094-1G
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NTD3055-094G
NTD3055-094G
MOSFET N-CH 60V 12A DPAK

Similar Products

Part Number NTD3055-094-1 NTD3055-094-1G
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 94mOhm @ 6A, 10V 94mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V 450 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta), 48W (Tj) 1.5W (Ta), 48W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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