NTD3055-094-1G
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onsemi NTD3055-094-1G

Manufacturer No:
NTD3055-094-1G
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 60V 12A IPAK
Delivery:
Payment:
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Product Introduction

Overview

The NTD3055-094-1G is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for low voltage, high speed switching applications, making it ideal for use in power supplies, converters, power motor controls, and bridge circuits. The MOSFET features a DPAK/IPAK package and is Pb-Free and RoHS compliant, ensuring environmental sustainability and reliability.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain-to-Gate Voltage VDGR 60 Vdc
Gate-to-Source Voltage (Continuous) VGS ±20 Vdc
Gate-to-Source Voltage (Non-Repetitive, tp < 10 ms) VGS ±30 Vdc
Continuous Drain Current at TA = 25°C ID 12 A
Continuous Drain Current at TA = 100°C ID 10 A
Single Pulse Drain Current (tp < 10 μs) IDM 45 A
Total Power Dissipation at TA = 25°C PD 48 W
Operating and Storage Temperature Range TJ, Tstg -55 to +175 °C
Static Drain-to-Source On-Resistance (VGS = 10 V, ID = 6 A) RDS(on) 94 mΩ
Thermal Resistance - Junction-to-Case RθJC 3.13 °C/W
Maximum Lead Temperature for Soldering TL 260 °C

Key Features

  • Lower RDS(on) for reduced power losses.
  • Lower VDS(on) for improved switching performance.
  • Lower and tighter VSD for better diode characteristics.
  • Lower Diode Reverse Recovery Time and Reverse Recovery Stored Charge for faster switching.
  • NVD prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Pb-Free and RoHS compliant.

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NTD3055-094-1G MOSFET?

    The maximum drain-to-source voltage is 60 Vdc.

  2. What is the continuous drain current at TA = 25°C?

    The continuous drain current at TA = 25°C is 12 A.

  3. What is the thermal resistance - junction-to-case for this MOSFET?

    The thermal resistance - junction-to-case is 3.13 °C/W.

  4. Is the NTD3055-094-1G Pb-Free and RoHS compliant?
  5. What are the typical applications of the NTD3055-094-1G MOSFET?

    The typical applications include power supplies, converters, power motor controls, and bridge circuits.

  6. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260 °C.

  7. Does the NTD3055-094-1G have any automotive qualifications?
  8. What is the static drain-to-source on-resistance of the NTD3055-094-1G?

    The static drain-to-source on-resistance is 94 mΩ at VGS = 10 V and ID = 6 A.

  9. What is the operating and storage temperature range of the NTD3055-094-1G?

    The operating and storage temperature range is -55 to +175 °C.

  10. What package types are available for the NTD3055-094-1G?

    The NTD3055-094-1G is available in DPAK and IPAK packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:94mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta), 48W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Same Series
NTD3055-094T4G
NTD3055-094T4G
MOSFET N-CH 60V 12A DPAK
NVD3055-094T4G-VF01
NVD3055-094T4G-VF01
MOSFET N-CH 60V 12A DPAK
NTD3055-094
NTD3055-094
MOSFET N-CH 60V 12A DPAK
NTD3055-094-1G
NTD3055-094-1G
MOSFET N-CH 60V 12A IPAK
NTD3055-094G
NTD3055-094G
MOSFET N-CH 60V 12A DPAK

Similar Products

Part Number NTD3055-094-1G NTD3055-094-1
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 94mOhm @ 6A, 10V 94mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V 450 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta), 48W (Tj) 1.5W (Ta), 48W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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