Overview
The NTD3055-094T4G is a high-power N-Channel MOSFET manufactured by ON Semiconductor. This device is rated for 60V and 12A, making it suitable for a variety of high-current switching applications. It is packaged in a 3-pin DPAK (TO-252) surface mount configuration, which is compact and efficient for modern electronic designs. The MOSFET features low on-state resistance (Rds(on)) of 94 mΩ, a fast body diode, and low capacitance, ensuring high efficiency and minimal losses in switching operations.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Type | N-Channel |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance (Rds(on)) | 94 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4 V |
| Maximum Power Dissipation | 48 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Height | 2.38 mm |
| Typical Gate Charge @ Vgs | 10.9 nC @ 10 V |
| Transistor Material | Silicon (Si) |
Key Features
- Low on-state resistance (Rds(on)) of 94 mΩ, reducing power losses and improving efficiency.
- Fast body diode with low capacitance, ideal for high-current switching applications with minimal EMI.
- Robust design with excellent thermal characteristics, suitable for infinite load switching.
- Wide range of gate charge and gate-source voltage, providing flexibility in design.
- Compact DPAK (TO-252) package, suitable for surface mount applications.
Applications
The NTD3055-094T4G MOSFET is versatile and can be used in various high-power switching applications, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Automotive and industrial power management systems.
- Renewable energy systems, such as solar and wind power inverters.
Q & A
- What is the maximum continuous drain current of the NTD3055-094T4G MOSFET?
The maximum continuous drain current is 12 A. - What is the maximum drain-source voltage of the NTD3055-094T4G MOSFET?
The maximum drain-source voltage is 60 V. - What is the package type of the NTD3055-094T4G MOSFET?
The package type is DPAK (TO-252). - What is the on-state resistance (Rds(on)) of the NTD3055-094T4G MOSFET?
The on-state resistance (Rds(on)) is 94 mΩ. - What are the maximum and minimum operating temperatures of the NTD3055-094T4G MOSFET?
The maximum operating temperature is +175 °C, and the minimum operating temperature is -55 °C. - What is the typical gate charge of the NTD3055-094T4G MOSFET at 10 V?
The typical gate charge is 10.9 nC at 10 V. - Is the NTD3055-094T4G MOSFET suitable for high-frequency switching applications?
Yes, it is suitable due to its fast body diode and low capacitance. - What are some common applications of the NTD3055-094T4G MOSFET?
Common applications include power supplies, motor control systems, high-frequency switching circuits, automotive and industrial power management, and renewable energy systems. - What is the maximum gate-source voltage of the NTD3055-094T4G MOSFET?
The maximum gate-source voltage is -20 V to +20 V. - Is the NTD3055-094T4G MOSFET RoHS compliant?
Yes, the NTD3055-094T4G MOSFET is RoHS compliant.
