Overview
The FDD86250-F085 is an N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi. This device is designed to offer high performance and reliability in various power management applications. With a drain-to-source voltage (VDSS) of 150V and a continuous drain current (ID) of 50A, it is well-suited for demanding environments. The MOSFET features a low on-resistance (RDS(on)) of 19.4 mΩ at VGS = 10V and ID = 20A, making it efficient for power switching applications.
Key Specifications
| Parameter | Symbol | Test Conditions | Min. | Max. | Units | |
|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 150 | V | |||
| Gate-to-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | VGS = 10V, TC = 25°C | 50 | A | ||
| Pulsed Drain Current | TC = 25°C | See Figure 4 | ||||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | |||
| Power Dissipation | PD | 160 | W | |||
| Thermal Resistance, Junction to Case | RθJC | 0.94 | °C/W | |||
| Maximum Thermal Resistance, Junction to Ambient | RθJA | 40 | °C/W | |||
| Operating and Storage Temperature | TJ, TSTG | -55 to +175 | °C | |||
| Drain to Source On Resistance | RDS(on) | ID = 20A, VGS = 10V, TJ = 25°C | 19.4 | 22 | mΩ | |
| Total Gate Charge | Qg(tot) | VGS = 0 to 10V, VDD = 120V, ID = 40A | 28 | 37 | nC |
Key Features
- Typical RDS(on) = 19.4 mΩ at VGS = 10V, ID = 20A
- Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40A
- UIS Capability
- RoHS Compliant
- Qualified to AEC Q101
Applications
- Automotive Engine Control
- PowerTrain Management
- Solenoid and Motor Drivers
- Integrated Starter/Alternator
- Distributed Power Architectures and VRM
- Primary Switch for 12V Systems
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the FDD86250-F085 MOSFET?
The maximum drain-to-source voltage (VDSS) is 150V.
- What is the continuous drain current (ID) rating of this MOSFET?
The continuous drain current (ID) rating is 50A at VGS = 10V and TC = 25°C.
- What is the typical on-resistance (RDS(on)) of the FDD86250-F085?
The typical on-resistance (RDS(on)) is 19.4 mΩ at VGS = 10V and ID = 20A.
- Is the FDD86250-F085 RoHS compliant?
Yes, the FDD86250-F085 is RoHS compliant.
- What are some common applications for the FDD86250-F085 MOSFET?
Common applications include automotive engine control, powertrain management, solenoid and motor drivers, integrated starter/alternator, distributed power architectures and VRM, and primary switch for 12V systems.
- What is the maximum thermal resistance, junction to ambient (RθJA), for this MOSFET?
The maximum thermal resistance, junction to ambient (RθJA), is 40°C/W.
- What is the total gate charge (Qg(tot)) of the FDD86250-F085?
The total gate charge (Qg(tot)) is typically 28 nC at VGS = 0 to 10V, VDD = 120V, and ID = 40A.
- Is the FDD86250-F085 qualified to any specific automotive standards?
Yes, the FDD86250-F085 is qualified to AEC Q101.
- What is the operating and storage temperature range for the FDD86250-F085?
The operating and storage temperature range is -55°C to +175°C.
- What package types are available for the FDD86250-F085?
The FDD86250-F085 is available in TO-252 (D-PAK) packages.
