Overview
The STH150N10F7-2 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is designed for high-power applications, offering ultra-low on-state resistance and low gate charge. It is packaged in a 3-pin H2PAK-2 format, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Type | N-Channel |
| Drain-Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Id) | 110 A |
| On-State Resistance (Rds(on)) | 3.4 mΩ (typ.) |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 8.115 nF |
| Maximum Operating Temperature | 175 °C |
| Maximum Power Dissipation | 250 W |
| Package Type | 3-Pin H2PAK-2 |
Key Features
- Ultra-low on-state resistance (Rds(on)) of 3.4 mΩ (typ.)
- Low gate charge for efficient switching
- High continuous drain current of 110 A
- Maximum operating temperature of 175 °C
- Maximum power dissipation of 250 W
- STripFET™ F7 technology with enhanced trench gate structure
- RoHS compliant
Applications
The STH150N10F7-2 is suitable for a wide range of high-power applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drives
- Automotive systems
- Industrial power management
- Renewable energy systems
Q & A
- What is the maximum drain-source voltage of the STH150N10F7-2?
The maximum drain-source voltage (Vds) is 100 V. - What is the typical on-state resistance of the STH150N10F7-2?
The typical on-state resistance (Rds(on)) is 3.4 mΩ. - What is the maximum continuous drain current of the STH150N10F7-2?
The maximum continuous drain current (Id) is 110 A. - What is the maximum operating temperature of the STH150N10F7-2?
The maximum operating temperature is 175 °C. - What is the package type of the STH150N10F7-2?
The package type is 3-Pin H2PAK-2. - Is the STH150N10F7-2 RoHS compliant?
Yes, the STH150N10F7-2 is RoHS compliant. - What technology does the STH150N10F7-2 use?
The STH150N10F7-2 uses STripFET™ F7 technology with an enhanced trench gate structure. - What are some common applications for the STH150N10F7-2?
Common applications include power supplies, motor control, automotive systems, industrial power management, and renewable energy systems. - What is the maximum power dissipation of the STH150N10F7-2?
The maximum power dissipation is 250 W. - What is the gate to source voltage (Vgs) of the STH150N10F7-2?
The gate to source voltage (Vgs) is 20 V.
