Overview
The NTS4173PT1G is a P-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The NTS4173PT1G is packaged in a compact SC-70-3 case, making it suitable for space-constrained designs. It features a drain-source breakdown voltage of 30 V and a continuous drain current of 1.2 A at 25°C, making it versatile for various power management and switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| Package / Case | SC-70-3 |
| Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Continuous Drain Current (Id) @ 25°C | 1.2 A |
| On-Resistance (Rds(on)) @ 2.5 V, 0.9 A | 280 mΩ |
| Power Dissipation (Pd) | 290 mW |
| Maximum Drain Current (Idm) | -5 A |
Key Features
- Low on-resistance (Rds(on)) of 280 mΩ at 2.5 V and 0.9 A, ensuring minimal power loss.
- High continuous drain current of 1.2 A at 25°C, suitable for demanding applications.
- Compact SC-70-3 package, ideal for space-constrained designs.
- Drain-source breakdown voltage of 30 V, providing robust protection against voltage spikes.
- Maximum power dissipation of 290 mW, ensuring reliable operation under various conditions.
Applications
The NTS4173PT1G is suitable for a wide range of applications, including:
- Power management and switching circuits.
- DC-DC converters and power supplies.
- Motor control and drive systems.
- Audio and video equipment.
- Automotive and industrial control systems.
Q & A
- What is the package type of the NTS4173PT1G?
The NTS4173PT1G is packaged in a SC-70-3 case. - What is the transistor polarity of the NTS4173PT1G?
The NTS4173PT1G is a P-Channel MOSFET. - What is the maximum drain-source breakdown voltage of the NTS4173PT1G?
The maximum drain-source breakdown voltage is 30 V. - What is the continuous drain current of the NTS4173PT1G at 25°C?
The continuous drain current is 1.2 A at 25°C. - What is the on-resistance (Rds(on)) of the NTS4173PT1G at 2.5 V and 0.9 A?
The on-resistance is 280 mΩ at 2.5 V and 0.9 A. - What is the maximum power dissipation of the NTS4173PT1G?
The maximum power dissipation is 290 mW. - What are some common applications of the NTS4173PT1G?
Common applications include power management and switching circuits, DC-DC converters, motor control systems, and automotive and industrial control systems. - Is the NTS4173PT1G RoHS compliant?
Yes, the NTS4173PT1G is RoHS compliant. - What is the maximum drain current (Idm) of the NTS4173PT1G?
The maximum drain current (Idm) is -5 A. - Where can I find detailed specifications and datasheets for the NTS4173PT1G?
Detailed specifications and datasheets can be found on official onsemi websites, as well as through distributors like Mouser, Digi-Key, and LCSC.
