Overview
The FQA70N10 is a power MOSFET in N-channel configuration, part of onsemi’s QFET® series. This component is designed for switching applications that demand high efficiency and reliability. Produced using onsemi’s proprietary planar stripe and DMOS technology, it is tailored to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. The FQA70N10 is packaged in a TO-3P, a 3-pin plastic encapsulated with a flange mount, intended for through-hole mounting. It boasts a high-power dissipation capacity of up to 214W, making it suitable for handling significant levels of energy.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (BVDSS) | 100 | V |
| Drain Current (ID) | 70 | A |
| On-Resistance (RDS(on)) | 23 mΩ (Max.) @ VGS = 10 V, ID = 35 A | mΩ |
| Gate Charge (Qg) | 85 nC (Typ.) | nC |
| Reverse Transfer Capacitance (Crss) | 150 pF (Typ.) | pF |
| Maximum Junction Temperature | 175 °C | °C |
| Avalanche Energy Rating | 1300 mJ | mJ |
| Pulsed Drain Current (ISM) | 280 A | A |
| Thermal Resistance, Junction-to-Case (RθJC) | 0.7 °C/W | °C/W |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 40 °C/W | °C/W |
Key Features
- 70 A, 100 V, RDS(on) = 23 mΩ (Max.) @ VGS = 10 V, ID = 35 A
- Low Gate Charge (Typ. 85 nC)
- Low Crss (Typ. 150 pF)
- 100% Avalanche Tested
- 175 °C Maximum Junction Temperature Rating
- Pb-Free Device with matte tin terminal finish
- High-power dissipation capacity of up to 214W
- Avalanche energy rating of 1300 mJ
- Pulsed drain current maximum of 280 A
Applications
The FQA70N10 is suitable for a variety of applications where high efficiency and reliability are crucial:
- Switched Mode Power Supplies: Ideal for high-efficiency power conversion.
- Audio Amplifiers: Enhances performance in audio amplification due to its low on-resistance and high-current handling.
- DC Motor Control: Suitable for controlling high-power motors in industrial automation.
- Variable Switching Power Applications: Applicable in various power management scenarios.
- Industrial Automation: Controls high-power motors or actuators in automated manufacturing lines.
- Consumer Electronics: High-efficiency power supplies for consumer electronics.
- Transportation and Logistics: Electric vehicles (EVs) and charging stations requiring efficient power management.
- Computing and Data Storage: Server power supplies demanding efficient and reliable power switching.
- Aerospace and Defense: Potential applications in aerospace and defense projects due to its robustness and high temperature operational range.
Q & A
- What is the maximum drain current of the FQA70N10?
The maximum drain current of the FQA70N10 is 70 A.
- What is the on-resistance (RDS(on)) of the FQA70N10?
The on-resistance (RDS(on)) of the FQA70N10 is 23 mΩ (Max.) @ VGS = 10 V, ID = 35 A.
- What is the maximum junction temperature of the FQA70N10?
The maximum junction temperature of the FQA70N10 is 175 °C.
- Is the FQA70N10 a Pb-Free device?
- What is the avalanche energy rating of the FQA70N10?
The avalanche energy rating of the FQA70N10 is 1300 mJ.
- What is the pulsed drain current maximum of the FQA70N10?
The pulsed drain current maximum of the FQA70N10 is 280 A.
- What are the typical applications of the FQA70N10?
The FQA70N10 is suitable for switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
- What is the thermal resistance, junction-to-case (RθJC) of the FQA70N10?
The thermal resistance, junction-to-case (RθJC) of the FQA70N10 is 0.7 °C/W.
- What is the gate charge (Qg) of the FQA70N10?
The gate charge (Qg) of the FQA70N10 is 85 nC (Typ.).
- What industries can benefit from using the FQA70N10?
The FQA70N10 can benefit industries such as industrial automation, consumer electronics, transportation and logistics, computing and data storage, and aerospace and defense.
