CSD18531Q5A
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Texas Instruments CSD18531Q5A

Manufacturer No:
CSD18531Q5A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 19A/100A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18531Q5A is a 60-V N-Channel NexFET™ power MOSFET manufactured by Texas Instruments. This device is designed to minimize losses in power conversion applications, offering ultra-low gate charge (Qg) and gate-to-drain charge (Qgd), along with low thermal resistance. It features a logic-level gate drive and is packaged in a 5-mm × 6-mm SON (VSONP-8) plastic package, which is lead-free, RoHS compliant, and halogen-free.

Key Specifications

Parameter Test Conditions Typical Value Unit
VDS (Drain-to-Source Voltage) VGS = 0 V, ID = 250 μA 60 V
VGS (Gate-to-Source Voltage) ±20 V
ID (Continuous Drain Current, Package Limited) 100 A
ID (Continuous Drain Current, Silicon Limited, TC = 25°C) 134 A
IDM (Pulsed Drain Current) 400 A
PD (Power Dissipation, Package Limited) 3.8 W
TJ (Operating Junction Temperature) –55 to 175 °C
Tstg (Storage Temperature) –55 to 175 °C
RDS(on) (Drain-to-Source On-Resistance, VGS = 10 V) ID = 22 A 3.5 mΩ
VGS(th) (Gate-to-Source Threshold Voltage) VDS = VGS, ID = 250 μA 1.8 V
Qg (Gate Charge Total, 10 V) 36 nC
Qgd (Gate Charge Gate-to-Drain) 5.9 nC

Key Features

  • Ultra-Low Qg and Qgd for reduced switching losses
  • Low thermal resistance for improved heat dissipation
  • Avalanche rated for robustness against transient conditions
  • Logic level gate drive for ease of use with microcontrollers
  • Lead-free terminal plating and RoHS compliant
  • Halogen-free for environmental compliance
  • SON 5-mm × 6-mm plastic package for compact design

Applications

  • DC-DC conversion
  • Secondary side synchronous rectifier
  • Battery motor control

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD18531Q5A?

    The maximum drain-to-source voltage (VDS) is 60 V.

  2. What is the typical on-resistance (RDS(on)) at VGS = 10 V?

    The typical on-resistance (RDS(on)) at VGS = 10 V is 3.5 mΩ.

  3. What is the gate charge total (Qg) at 10 V?

    The gate charge total (Qg) at 10 V is 36 nC.

  4. What is the operating junction temperature range?

    The operating junction temperature range is –55 to 175°C.

  5. Is the CSD18531Q5A RoHS compliant?

    Yes, the CSD18531Q5A is RoHS compliant and halogen-free.

  6. What are the typical applications of the CSD18531Q5A?

    The typical applications include DC-DC conversion, secondary side synchronous rectifier, and battery motor control.

  7. What is the package type of the CSD18531Q5A?

    The package type is a 5-mm × 6-mm SON (VSONP-8) plastic package.

  8. What is the maximum continuous drain current (ID) at package limit?

    The maximum continuous drain current (ID) at package limit is 100 A.

  9. What is the maximum pulsed drain current (IDM)?

    The maximum pulsed drain current (IDM) is 400 A.

  10. What is the power dissipation (PD) at package limit?

    The power dissipation (PD) at package limit is 3.8 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3840 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18531Q5A CSD19531Q5A CSD18531Q5AT CSD18534Q5A CSD18533Q5A CSD18501Q5A CSD18511Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 100 V 60 V 60 V 60 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 100A (Tc) 100A (Tc) 100A (Ta) 13A (Ta), 50A (Tc) 17A (Ta), 100A (Tc) 22A (Ta), 100A (Tc) 159A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 6V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 22A, 10V 6.4mOhm @ 16A, 10V 4.6mOhm @ 22A, 10V 9.8mOhm @ 14A, 10V 5.9mOhm @ 18A, 10V 3.2mOhm @ 25A, 10V 3.5mOhm @ 24A, 4.5V
Vgs(th) (Max) @ Id 2.3V @ 250µA 3.3V @ 250µA 2.3V @ 250µA 2.3V @ 250µA 2.3V @ 250µA 2.3V @ 250µA 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 48 nC @ 10 V 43 nC @ 10 V 22 nC @ 10 V 36 nC @ 10 V 50 nC @ 10 V 63 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3840 pF @ 30 V 3870 pF @ 50 V 3840 pF @ 30 V 1770 pF @ 30 V 2750 pF @ 30 V 3840 pF @ 20 V 5850 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.1W (Ta), 156W (Tc) 3.3W (Ta), 125W (Tc) 3.1W (Ta), 156W (Tc) 3.1W (Ta), 77W (Tc) 3.2W (Ta), 116W (Tc) 3.1W (Ta), 150W (Tc) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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