CSD18501Q5A
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Texas Instruments CSD18501Q5A

Manufacturer No:
CSD18501Q5A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 22A/100A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18501Q5A is a 40V N-Channel NexFET Power MOSFET produced by Texas Instruments. This device is designed for high-performance applications requiring low on-state resistance and high current handling. The CSD18501Q5A is packaged in a VSONP-8 (4.9x6) package, making it suitable for space-constrained designs while maintaining high thermal performance.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (V_DS) 40 V
Continuous Drain Current (I_D) 100 A
On-State Resistance (R_DS(on)) 3.1
Gate-Source Threshold Voltage (V_GS(th)) 1.8 V
Junction-to-Case Thermal Resistance (RθJC) 1.0 °C/W
Junction-to-Ambient Thermal Resistance (RθJA) 50 °C/W
Turn Off Delay Time (t_d(off)) 20 ns
Fall Time (t_f) 3.4 ns
Diode Forward Voltage (V_SD) 0.8 - 1 V
Reverse Recovery Charge (Q_rr) 70 nC
Reverse Recovery Time (t_rr) 40 ns

Key Features

  • Low On-State Resistance: The CSD18501Q5A features a low R_DS(on) of 3.1 mΩ, which minimizes conduction losses in power conversion applications.
  • High Current Handling: Capable of handling continuous drain currents up to 100 A.
  • Low Thermal Resistance: With a junction-to-case thermal resistance (RθJC) of 1.0 °C/W, this MOSFET is designed for efficient heat dissipation.
  • Avalanche Rated: The device is rated for avalanche conditions, ensuring robust performance under transient conditions.
  • RoHS Compliant and Halogen Free: Meets environmental standards for lead-free and halogen-free terminal plating.

Applications

  • Power Conversion: Suitable for DC-DC converters, power supplies, and other power conversion applications where high efficiency and low losses are critical.
  • Motor Control: Used in motor drive circuits due to its high current handling and low on-state resistance.
  • Switching Applications: Ideal for high-frequency switching applications such as synchronous rectifiers and buck converters.
  • Industrial and Automotive Systems: Can be used in various industrial and automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the CSD18501Q5A?

    The maximum drain-source voltage (V_DS) is 40 V.

  2. What is the continuous drain current rating of the CSD18501Q5A?

    The continuous drain current (I_D) is rated up to 100 A.

  3. What is the on-state resistance of the CSD18501Q5A?

    The on-state resistance (R_DS(on)) is 3.1 mΩ.

  4. What is the junction-to-case thermal resistance of the CSD18501Q5A?

    The junction-to-case thermal resistance (RθJC) is 1.0 °C/W.

  5. Is the CSD18501Q5A RoHS compliant?

    Yes, the CSD18501Q5A is RoHS compliant and halogen free.

  6. What is the typical fall time of the CSD18501Q5A?

    The typical fall time (t_f) is 3.4 ns.

  7. What is the reverse recovery charge of the CSD18501Q5A?

    The reverse recovery charge (Q_rr) is 70 nC.

  8. What are some common applications for the CSD18501Q5A?

    Common applications include power conversion, motor control, switching applications, and industrial and automotive systems.

  9. What package type is the CSD18501Q5A available in?

    The CSD18501Q5A is available in a VSONP-8 (4.9x6) package.

  10. Is the CSD18501Q5A avalanche rated?

    Yes, the CSD18501Q5A is avalanche rated.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3840 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18501Q5A CSD18504Q5A CSD18531Q5A CSD18511Q5A CSD18503Q5A CSD17501Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 60 V 40 V 40 V 30 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 100A (Tc) 15A (Ta), 50A (Tc) 19A (Ta), 100A (Tc) 159A (Tc) 19A (Ta), 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 10V 6.6mOhm @ 17A, 10V 4.6mOhm @ 22A, 10V 3.5mOhm @ 24A, 4.5V 4.3mOhm @ 22A, 10V 2.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.4V @ 250µA 2.3V @ 250µA 2.45V @ 250µA 2.3V @ 250µA 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 19 nC @ 10 V 43 nC @ 10 V 63 nC @ 10 V 32 nC @ 10 V 17 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3840 pF @ 20 V 1656 pF @ 20 V 3840 pF @ 30 V 5850 pF @ 10 V 2640 pF @ 20 V 2630 pF @ 15 V
FET Feature - - - - - -
Power Dissipation (Max) 3.1W (Ta), 150W (Tc) 3.1W (Ta), 77W (Tc) 3.1W (Ta), 156W (Tc) 104W (Tc) 3.1W (Ta), 120W (Tc) 3.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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