CSD18503Q5A
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Texas Instruments CSD18503Q5A

Manufacturer No:
CSD18503Q5A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 19A/100A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD18503Q5A is a high-performance N-Channel NexFET power MOSFET produced by Texas Instruments. This device is designed for applications requiring low on-resistance, fast switching speeds, and high reliability. The CSD18503Q5A features an ultra-low drain-to-source on-resistance (RDS(on)) and is packaged in a compact 5 mm x 6 mm SON (Small Outline No-Lead) package, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Test Conditions Min Max Unit
BVDSS (Drain-to-source voltage) VGS = 0 V, ID = 250 μA - - 40 V
IDSS (Drain-to-source leakage current) VGS = 0 V, VDS = 32 V - - 1 μA μA
IGSS (Gate-to-source leakage current) VDS = 0 V, VGS = 20 V - - 100 nA nA
VGS(th) (Gate-to-source threshold voltage) VDS = VGS, ID = 250 μA 1.5 1.8 2.3 V
RDS(on) (Drain-to-source on-resistance) at VGS = 4.5 V ID = 22 A - 4.7 6.2 mΩ
RDS(on) (Drain-to-source on-resistance) at VGS = 10 V ID = 22 A - 3.4 4.3 mΩ
Qg (Gate charge total) at VGS = 4.5 V - - 13 - nC
Qgd (Gate charge gate-to-drain) at VGS = 4.5 V - - 4.3 - nC
VSD (Diode forward voltage) ISD = 22 A, VGS = 0 V - 0.8 1 V
Qrr (Reverse recovery charge) VDS = 20 V, IF = 22 A, di/dt = 300 A/μs - 52 - nC
RθJA (Junction-to-ambient thermal resistance) Device mounted on FR4 material with 1 inch^2 (6.45 cm^2), 2 oz. (0.071 mm thick) Cu. - - 50 °C/W

Key Features

  • Ultra-Low RDS(on): The CSD18503Q5A features ultra-low drain-to-source on-resistance, with values as low as 3.4 mΩ at VGS = 10 V and 4.7 mΩ at VGS = 4.5 V, making it highly efficient for power management applications.
  • Low Thermal Resistance: The device has a low junction-to-ambient thermal resistance (RθJA) of 50°C/W when mounted on a suitable PCB, enhancing thermal performance.
  • Avalanche Rated: The MOSFET is avalanche rated, ensuring it can withstand high-energy pulses in applications where such stresses are common.
  • Logic Level: It operates at logic level, making it compatible with a wide range of digital control signals.
  • Pb Free Terminal Plating and RoHS Compliant: The device is lead-free and RoHS compliant, meeting environmental and regulatory standards.
  • Halogen Free: The component is halogen-free, contributing to a safer and more environmentally friendly product.
  • Compact Package: The SON 5 mm x 6 mm package is compact and suitable for space-constrained designs.

Applications

  • DC-DC Conversion: The CSD18503Q5A is well-suited for DC-DC converter applications due to its low on-resistance and fast switching characteristics.
  • Secondary Side Synchronous Rectifier: It is ideal for use as a synchronous rectifier in secondary side applications, where high efficiency and low losses are critical.
  • Power Management Systems: The device can be used in various power management systems requiring high performance and reliability.

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD18503Q5A?

    The maximum drain-to-source voltage (VDS) is 40 V.

  2. What is the typical drain-to-source on-resistance (RDS(on)) at VGS = 4.5 V?

    The typical drain-to-source on-resistance (RDS(on)) at VGS = 4.5 V is 4.7 mΩ.

  3. Is the CSD18503Q5A RoHS compliant?
  4. What is the junction-to-ambient thermal resistance (RθJA) of the CSD18503Q5A?

    The junction-to-ambient thermal resistance (RθJA) is 50°C/W when mounted on a suitable PCB.

  5. What are the typical gate charge (Qg) and gate-to-drain charge (Qgd) values?

    The typical gate charge (Qg) is 13 nC, and the typical gate-to-drain charge (Qgd) is 4.3 nC.

  6. What is the operating temperature range of the CSD18503Q5A?

    The operating temperature range is -55°C to 150°C.

  7. Is the CSD18503Q5A suitable for DC-DC conversion applications?
  8. What is the package type of the CSD18503Q5A?

    The package type is SON 5 mm x 6 mm.

  9. Is the CSD18503Q5A halogen-free?
  10. What are some common applications for the CSD18503Q5A besides DC-DC conversion?

    Besides DC-DC conversion, it is also used in secondary side synchronous rectifier applications and various power management systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2640 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18503Q5A CSD18504Q5A CSD18533Q5A CSD18513Q5A CSD18503Q5AT CSD18563Q5A CSD18501Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 60 V 40 V 40 V 60 V 40 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 100A (Tc) 15A (Ta), 50A (Tc) 17A (Ta), 100A (Tc) 124A (Tc) 100A (Tc) 100A (Ta) 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 22A, 10V 6.6mOhm @ 17A, 10V 5.9mOhm @ 18A, 10V 5.3mOhm @ 19A, 10V 4.3mOhm @ 22A, 10V 6.8mOhm @ 18A, 10V 3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.4V @ 250µA 2.3V @ 250µA 2.4V @ 250µA 2.3V @ 250µA 2.4V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 19 nC @ 10 V 36 nC @ 10 V 61 nC @ 10 V 16 nC @ 4.5 V 20 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2640 pF @ 20 V 1656 pF @ 20 V 2750 pF @ 30 V 4280 pF @ 20 V 2640 pF @ 20 V 1500 pF @ 30 V 3840 pF @ 20 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.1W (Ta), 120W (Tc) 3.1W (Ta), 77W (Tc) 3.2W (Ta), 116W (Tc) 96W (Tc) 3.1W (Ta), 120W (Tc) 3.2W (Ta), 116W (Tc) 3.1W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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