CSD18503Q5A
  • Share:

Texas Instruments CSD18503Q5A

Manufacturer No:
CSD18503Q5A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 19A/100A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD18503Q5A is a high-performance N-Channel NexFET power MOSFET produced by Texas Instruments. This device is designed for applications requiring low on-resistance, fast switching speeds, and high reliability. The CSD18503Q5A features an ultra-low drain-to-source on-resistance (RDS(on)) and is packaged in a compact 5 mm x 6 mm SON (Small Outline No-Lead) package, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Test Conditions Min Max Unit
BVDSS (Drain-to-source voltage) VGS = 0 V, ID = 250 μA - - 40 V
IDSS (Drain-to-source leakage current) VGS = 0 V, VDS = 32 V - - 1 μA μA
IGSS (Gate-to-source leakage current) VDS = 0 V, VGS = 20 V - - 100 nA nA
VGS(th) (Gate-to-source threshold voltage) VDS = VGS, ID = 250 μA 1.5 1.8 2.3 V
RDS(on) (Drain-to-source on-resistance) at VGS = 4.5 V ID = 22 A - 4.7 6.2 mΩ
RDS(on) (Drain-to-source on-resistance) at VGS = 10 V ID = 22 A - 3.4 4.3 mΩ
Qg (Gate charge total) at VGS = 4.5 V - - 13 - nC
Qgd (Gate charge gate-to-drain) at VGS = 4.5 V - - 4.3 - nC
VSD (Diode forward voltage) ISD = 22 A, VGS = 0 V - 0.8 1 V
Qrr (Reverse recovery charge) VDS = 20 V, IF = 22 A, di/dt = 300 A/μs - 52 - nC
RθJA (Junction-to-ambient thermal resistance) Device mounted on FR4 material with 1 inch^2 (6.45 cm^2), 2 oz. (0.071 mm thick) Cu. - - 50 °C/W

Key Features

  • Ultra-Low RDS(on): The CSD18503Q5A features ultra-low drain-to-source on-resistance, with values as low as 3.4 mΩ at VGS = 10 V and 4.7 mΩ at VGS = 4.5 V, making it highly efficient for power management applications.
  • Low Thermal Resistance: The device has a low junction-to-ambient thermal resistance (RθJA) of 50°C/W when mounted on a suitable PCB, enhancing thermal performance.
  • Avalanche Rated: The MOSFET is avalanche rated, ensuring it can withstand high-energy pulses in applications where such stresses are common.
  • Logic Level: It operates at logic level, making it compatible with a wide range of digital control signals.
  • Pb Free Terminal Plating and RoHS Compliant: The device is lead-free and RoHS compliant, meeting environmental and regulatory standards.
  • Halogen Free: The component is halogen-free, contributing to a safer and more environmentally friendly product.
  • Compact Package: The SON 5 mm x 6 mm package is compact and suitable for space-constrained designs.

Applications

  • DC-DC Conversion: The CSD18503Q5A is well-suited for DC-DC converter applications due to its low on-resistance and fast switching characteristics.
  • Secondary Side Synchronous Rectifier: It is ideal for use as a synchronous rectifier in secondary side applications, where high efficiency and low losses are critical.
  • Power Management Systems: The device can be used in various power management systems requiring high performance and reliability.

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD18503Q5A?

    The maximum drain-to-source voltage (VDS) is 40 V.

  2. What is the typical drain-to-source on-resistance (RDS(on)) at VGS = 4.5 V?

    The typical drain-to-source on-resistance (RDS(on)) at VGS = 4.5 V is 4.7 mΩ.

  3. Is the CSD18503Q5A RoHS compliant?
  4. What is the junction-to-ambient thermal resistance (RθJA) of the CSD18503Q5A?

    The junction-to-ambient thermal resistance (RθJA) is 50°C/W when mounted on a suitable PCB.

  5. What are the typical gate charge (Qg) and gate-to-drain charge (Qgd) values?

    The typical gate charge (Qg) is 13 nC, and the typical gate-to-drain charge (Qgd) is 4.3 nC.

  6. What is the operating temperature range of the CSD18503Q5A?

    The operating temperature range is -55°C to 150°C.

  7. Is the CSD18503Q5A suitable for DC-DC conversion applications?
  8. What is the package type of the CSD18503Q5A?

    The package type is SON 5 mm x 6 mm.

  9. Is the CSD18503Q5A halogen-free?
  10. What are some common applications for the CSD18503Q5A besides DC-DC conversion?

    Besides DC-DC conversion, it is also used in secondary side synchronous rectifier applications and various power management systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2640 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.74
439

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50T2X/AA
DD26S2S50T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number CSD18503Q5A CSD18504Q5A CSD18533Q5A CSD18513Q5A CSD18503Q5AT CSD18563Q5A CSD18501Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 60 V 40 V 40 V 60 V 40 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 100A (Tc) 15A (Ta), 50A (Tc) 17A (Ta), 100A (Tc) 124A (Tc) 100A (Tc) 100A (Ta) 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 22A, 10V 6.6mOhm @ 17A, 10V 5.9mOhm @ 18A, 10V 5.3mOhm @ 19A, 10V 4.3mOhm @ 22A, 10V 6.8mOhm @ 18A, 10V 3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.4V @ 250µA 2.3V @ 250µA 2.4V @ 250µA 2.3V @ 250µA 2.4V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 19 nC @ 10 V 36 nC @ 10 V 61 nC @ 10 V 16 nC @ 4.5 V 20 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2640 pF @ 20 V 1656 pF @ 20 V 2750 pF @ 30 V 4280 pF @ 20 V 2640 pF @ 20 V 1500 pF @ 30 V 3840 pF @ 20 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.1W (Ta), 120W (Tc) 3.1W (Ta), 77W (Tc) 3.2W (Ta), 116W (Tc) 96W (Tc) 3.1W (Ta), 120W (Tc) 3.2W (Ta), 116W (Tc) 3.1W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

TPD4E05U06DQAR
TPD4E05U06DQAR
Texas Instruments
TVS DIODE 5.5VWM 14VC 10USON
CSD17571Q2
CSD17571Q2
Texas Instruments
MOSFET N-CH 30V 22A 6SON
ADC12J4000NKE10
ADC12J4000NKE10
Texas Instruments
IC ADC 12BIT FOLD INTERP 68VQFN
CD74HC4051QM96Q1
CD74HC4051QM96Q1
Texas Instruments
IC MUX/DEMUX 8X1 16-SOIC
LMV324Q3MT/NOPB
LMV324Q3MT/NOPB
Texas Instruments
IC OPAMP GP 4 CIRCUIT 14TSSOP
OPA340NA/250G4
OPA340NA/250G4
Texas Instruments
IC OPAMP GP 1 CIRCUIT SOT23-5
SN74LVC1G97DBVR
SN74LVC1G97DBVR
Texas Instruments
IC CONFIG MULT-FUNC GATE SOT23-6
SN74AHC594DRG4
SN74AHC594DRG4
Texas Instruments
IC SHIFT REGISTER 8BIT 16-SOIC
TL431ILPR5
TL431ILPR5
Texas Instruments
VOLTAGE REFERENCE
LT1009CDRG4
LT1009CDRG4
Texas Instruments
IC VREF SHUNT 0.4% 8SOIC
LP2985A-10DBVR
LP2985A-10DBVR
Texas Instruments
IC REG LINEAR 10V 150MA SOT23-5
TPS70928QDRVRQ1
TPS70928QDRVRQ1
Texas Instruments
IC REG LINEAR 2.8V 150MA 6WSON