CSD18563Q5A
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Texas Instruments CSD18563Q5A

Manufacturer No:
CSD18563Q5A
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 100A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD18563Q5A is a 60 V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed for high-performance applications requiring low on-state resistance and ultra-low gate charge. It is packaged in a SON 5 mm × 6 mm plastic package, making it suitable for space-constrained designs. The MOSFET is part of a complete industrial buck converter chipset solution when paired with the CSD18537NQ5A control FET.

Key Specifications

Parameter Typical Value Unit
VDS - Drain-to-Source Voltage 60 V
VGS - Gate-to-Source Voltage ±20 V
ID - Continuous Drain Current (Package limited) 100 A
ID - Continuous Drain Current (Silicon limited), TC = 25°C 93 A
IDM - Pulsed Drain Current 251 A
PD - Power Dissipation, TC = 25°C 3.2 W
TJ - Operating Junction Temperature -55 to 150 °C
VGS(th) - Gate-to-Source Threshold Voltage 1.7 to 2.4 V
RDS(on) - Drain-to-Source On-Resistance (VGS = 10 V, ID = 18 A) 5.7 to 6.8 mΩ
Qg - Total Gate Charge (10 V) 15 nC
Qgd - Gate Charge Gate-to-Drain 2.9 nC
Ciss - Input Capacitance (VGS = 0 V, VDS = 30 V, ƒ = 1 MHz) 1150 to 1500 pF
Coss - Output Capacitance 280 to 364 pF

Key Features

  • Ultra-Low Qg and Qgd for efficient switching
  • Soft Body Diode for reduced ringing
  • Low Thermal Resistance
  • Avalanche Rated for robust operation
  • Logic Level for compatibility with various control signals
  • Pb-Free Terminal Plating and RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package for compact designs

Applications

  • Low-Side FET for Industrial Buck Converters
  • Secondary Side Synchronous Rectifier
  • Motor Control

Q & A

  1. What is the maximum drain-to-source voltage of the CSD18563Q5A?

    The maximum drain-to-source voltage (VDS) is 60 V.

  2. What is the typical on-state resistance of the CSD18563Q5A at VGS = 10 V and ID = 18 A?

    The typical on-state resistance (RDS(on)) is 5.7 mΩ.

  3. What is the total gate charge (Qg) at VGS = 10 V?

    The total gate charge (Qg) is approximately 15 nC.

  4. What are the operating junction temperature limits for the CSD18563Q5A?

    The operating junction temperature range is -55°C to 150°C.

  5. Is the CSD18563Q5A RoHS compliant?
  6. What package type is the CSD18563Q5A available in?

    The CSD18563Q5A is available in a SON 5 mm × 6 mm plastic package.

  7. What are some typical applications for the CSD18563Q5A?

    Typical applications include low-side FET for industrial buck converters, secondary side synchronous rectifier, and motor control.

  8. What is the maximum continuous drain current for the CSD18563Q5A?

    The maximum continuous drain current (ID) is 100 A (package limited) and 93 A (silicon limited) at TC = 25°C.

  9. Does the CSD18563Q5A have any special diode characteristics?
  10. What is the gate-to-source threshold voltage range for the CSD18563Q5A?

    The gate-to-source threshold voltage (VGS(th)) range is 1.7 to 2.4 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 116W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18563Q5A CSD18563Q5AT CSD18503Q5A CSD18513Q5A CSD18533Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 40 V 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 100A (Ta) 19A (Ta), 100A (Tc) 124A (Tc) 17A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.8mOhm @ 18A, 10V 6.8mOhm @ 18A, 10V 4.3mOhm @ 22A, 10V 5.3mOhm @ 19A, 10V 5.9mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 250µA 2.3V @ 250µA 2.4V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 20 nC @ 10 V 32 nC @ 10 V 61 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 30 V 1500 pF @ 30 V 2640 pF @ 20 V 4280 pF @ 20 V 2750 pF @ 30 V
FET Feature - - - - -
Power Dissipation (Max) 3.2W (Ta), 116W (Tc) 3.2W (Ta), 116W (Tc) 3.1W (Ta), 120W (Tc) 96W (Tc) 3.2W (Ta), 116W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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