Overview
The CSD18563Q5AT is a 60 V N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed for high-performance applications requiring low on-state resistance and high current handling. It features a compact SON 5 mm × 6 mm plastic package, making it suitable for space-constrained designs. The MOSFET is part of a complete industrial buck converter chipset solution, often paired with the CSD18537NQ5A control FET.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS - Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | - | - | 60 | V |
| VGS - Gate-to-Source Voltage | - | - | - | ±20 | V |
| ID - Continuous Drain Current (Package limited) | - | - | - | 100 | A |
| ID - Continuous Drain Current (Silicon limited), TC = 25°C | - | - | - | 93 | A |
| IDM - Pulsed Drain Current | - | - | - | 251 | A |
| RDS(on) - Drain-to-Source On-Resistance | VGS = 4.5 V, ID = 18 A | 8.6 | 10.8 | mΩ | |
| RDS(on) - Drain-to-Source On-Resistance | VGS = 10 V, ID = 18 A | 5.7 | 6.8 | mΩ | |
| VGS(th) - Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250 μA | 1.7 | 2.0 | 2.4 | V |
| Qg - Gate Charge Total (10 V) | VDS = 30 V, ID = 18 A | 15 | - | 20 | nC |
| Qgd - Gate Charge Gate-to-Drain | - | - | 2.9 | nC | |
| TJ - Operating Junction Temperature | - | - | - | -55 to 150 | °C |
Key Features
- Ultra-Low Qg and Qgd: Low gate charge and gate-to-drain charge for efficient switching.
- Soft Body Diode: Reduces ringing and improves overall system reliability.
- Low Thermal Resistance: Enhances heat dissipation and reliability in high-power applications.
- Avalanche Rated: Capable of withstanding high-energy pulses.
- Logic Level: Compatible with standard logic levels, making it easy to integrate into various systems.
- Pb-Free Terminal Plating, RoHS Compliant, and Halogen Free: Meets environmental and safety standards.
- SON 5 mm × 6 mm Plastic Package: Compact and suitable for space-constrained designs.
Applications
- Low-Side FET for Industrial Buck Converter: Ideal for high-efficiency power conversion.
- Secondary Side Synchronous Rectifier: Enhances efficiency in power supply designs.
- Motor Control: Suitable for motor drive applications requiring high current and low on-state resistance.
Q & A
- What is the maximum drain-to-source voltage of the CSD18563Q5AT?
The maximum drain-to-source voltage is 60 V.
- What is the typical on-state resistance of the CSD18563Q5AT at VGS = 10 V and ID = 18 A?
The typical on-state resistance is 5.7 mΩ.
- What is the gate-to-source threshold voltage range of the CSD18563Q5AT?
The gate-to-source threshold voltage range is 1.7 V to 2.4 V.
- What is the maximum continuous drain current of the CSD18563Q5AT?
The maximum continuous drain current is 100 A (package limited) and 93 A (silicon limited) at TC = 25°C.
- What is the operating junction temperature range of the CSD18563Q5AT?
The operating junction temperature range is -55°C to 150°C.
- Is the CSD18563Q5AT RoHS compliant and halogen free?
Yes, it is RoHS compliant, Pb-free, and halogen free.
- What is the typical gate charge total at VGS = 10 V for the CSD18563Q5AT?
The typical gate charge total at VGS = 10 V is 15 nC to 20 nC.
- What are some common applications of the CSD18563Q5AT?
Common applications include low-side FET for industrial buck converters, secondary side synchronous rectifiers, and motor control.
- What package type does the CSD18563Q5AT come in?
The CSD18563Q5AT comes in a SON 5 mm × 6 mm plastic package.
- Is the CSD18563Q5AT avalanche rated?
Yes, it is avalanche rated, capable of withstanding high-energy pulses.
