CSD18503Q5AT
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Texas Instruments CSD18503Q5AT

Manufacturer No:
CSD18503Q5AT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 100A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD18503Q5AT is a 40 V N-Channel NexFET™ Power MOSFET produced by Texas Instruments. This device is designed to offer ultra-low gate charge (Qg) and gate-to-drain charge (Qgd), making it highly efficient for various power management applications. The MOSFET features a low on-state resistance (RDS(on)) and is available in a compact SON 5 mm × 6 mm plastic package, which is Pb-free, RoHS-compliant, and halogen-free.

Key Specifications

Parameter Test Conditions Min Typ Max Unit
BVDSS VGS = 0 V, ID = 250 μA 40 V
IDSS VGS = 0 V, VDS = 32 V 1 μA
IGSS VDS = 0 V, VGS = 20 V 100 nA
VGS(th) VDS = VGS, ID = 250 μA 1.5 1.8 2.3 V
RDS(on) VGS = 10 V, ID = 22 A 3.4 4.3 mΩ
Qg (Total) VGS = 4.5 V 13 16 nC
Qgd VDS = 20 V, ID = 22 A 4.3 nC
RθJA 50 °C/W

Key Features

  • Ultra-low gate charge (Qg) and gate-to-drain charge (Qgd)
  • Low on-state resistance (RDS(on)) of 3.4 mΩ at VGS = 10 V and ID = 22 A
  • Avalanche rated for robust operation
  • Logic level gate drive with VGS(th) of 1.8 V
  • Pb-free terminal plating, RoHS-compliant, and halogen-free
  • Compact SON 5 mm × 6 mm plastic package
  • Low thermal resistance with RθJA of 50°C/W

Applications

  • DC-DC conversion
  • Secondary side synchronous rectifier
  • Other power management applications requiring high efficiency and low thermal resistance

Q & A

  1. What is the maximum drain-to-source voltage (VDS) of the CSD18503Q5AT?

    The maximum drain-to-source voltage (VDS) is 40 V.

  2. What is the typical on-state resistance (RDS(on)) of the CSD18503Q5AT?

    The typical on-state resistance (RDS(on)) is 3.4 mΩ at VGS = 10 V and ID = 22 A.

  3. What is the gate charge (Qg) of the CSD18503Q5AT?

    The total gate charge (Qg) is 13 nC at VGS = 4.5 V.

  4. Is the CSD18503Q5AT RoHS-compliant and halogen-free?
  5. What is the package type of the CSD18503Q5AT?

    The package type is SON 5 mm × 6 mm plastic package.

  6. What are the typical applications of the CSD18503Q5AT?

    The typical applications include DC-DC conversion and secondary side synchronous rectifier.

  7. What is the junction-to-ambient thermal resistance (RθJA) of the CSD18503Q5AT?

    The junction-to-ambient thermal resistance (RθJA) is 50°C/W.

  8. What is the threshold voltage (VGS(th)) of the CSD18503Q5AT?

    The threshold voltage (VGS(th)) is 1.8 V.

  9. Is the CSD18503Q5AT avalanche rated?
  10. What is the reverse recovery charge (Qrr) of the CSD18503Q5AT?

    The reverse recovery charge (Qrr) is 52 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2640 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSONP (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD18503Q5AT CSD18563Q5AT CSD18533Q5AT CSD18504Q5AT CSD18513Q5AT CSD18503Q5A
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V 60 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Ta) 17A (Ta), 100A (Tc) 50A (Ta) 124A (Tc) 19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 22A, 10V 6.8mOhm @ 18A, 10V 5.9mOhm @ 18A, 10V 6.6mOhm @ 17A, 10V 5.3mOhm @ 19A, 10V 4.3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.4V @ 250µA 2.3V @ 250µA 2.4V @ 250µA 2.4V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V 20 nC @ 10 V 36 nC @ 10 V 9.2 nC @ 4.5 V 61 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2640 pF @ 20 V 1500 pF @ 30 V 2750 pF @ 30 V 1656 pF @ 20 V 4280 pF @ 20 V 2640 pF @ 20 V
FET Feature - - - - - -
Power Dissipation (Max) 3.1W (Ta), 120W (Tc) 3.2W (Ta), 116W (Tc) 3.2W (Ta), 116W (Tc) 3.1W (Ta), 77W (Tc) 96W (Tc) 3.1W (Ta), 120W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6) 8-VSONP (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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