Overview
The CSD18503Q5AT is a 40 V N-Channel NexFET™ Power MOSFET produced by Texas Instruments. This device is designed to offer ultra-low gate charge (Qg) and gate-to-drain charge (Qgd), making it highly efficient for various power management applications. The MOSFET features a low on-state resistance (RDS(on)) and is available in a compact SON 5 mm × 6 mm plastic package, which is Pb-free, RoHS-compliant, and halogen-free.
Key Specifications
Parameter | Test Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|
BVDSS | VGS = 0 V, ID = 250 μA | 40 | V | ||
IDSS | VGS = 0 V, VDS = 32 V | 1 | μA | ||
IGSS | VDS = 0 V, VGS = 20 V | 100 | nA | ||
VGS(th) | VDS = VGS, ID = 250 μA | 1.5 | 1.8 | 2.3 | V |
RDS(on) | VGS = 10 V, ID = 22 A | 3.4 | 4.3 | mΩ | |
Qg (Total) | VGS = 4.5 V | 13 | 16 | nC | |
Qgd | VDS = 20 V, ID = 22 A | 4.3 | nC | ||
RθJA | 50 | °C/W |
Key Features
- Ultra-low gate charge (Qg) and gate-to-drain charge (Qgd)
- Low on-state resistance (RDS(on)) of 3.4 mΩ at VGS = 10 V and ID = 22 A
- Avalanche rated for robust operation
- Logic level gate drive with VGS(th) of 1.8 V
- Pb-free terminal plating, RoHS-compliant, and halogen-free
- Compact SON 5 mm × 6 mm plastic package
- Low thermal resistance with RθJA of 50°C/W
Applications
- DC-DC conversion
- Secondary side synchronous rectifier
- Other power management applications requiring high efficiency and low thermal resistance
Q & A
- What is the maximum drain-to-source voltage (VDS) of the CSD18503Q5AT?
The maximum drain-to-source voltage (VDS) is 40 V.
- What is the typical on-state resistance (RDS(on)) of the CSD18503Q5AT?
The typical on-state resistance (RDS(on)) is 3.4 mΩ at VGS = 10 V and ID = 22 A.
- What is the gate charge (Qg) of the CSD18503Q5AT?
The total gate charge (Qg) is 13 nC at VGS = 4.5 V.
- Is the CSD18503Q5AT RoHS-compliant and halogen-free?
- What is the package type of the CSD18503Q5AT?
The package type is SON 5 mm × 6 mm plastic package.
- What are the typical applications of the CSD18503Q5AT?
The typical applications include DC-DC conversion and secondary side synchronous rectifier.
- What is the junction-to-ambient thermal resistance (RθJA) of the CSD18503Q5AT?
The junction-to-ambient thermal resistance (RθJA) is 50°C/W.
- What is the threshold voltage (VGS(th)) of the CSD18503Q5AT?
The threshold voltage (VGS(th)) is 1.8 V.
- Is the CSD18503Q5AT avalanche rated?
- What is the reverse recovery charge (Qrr) of the CSD18503Q5AT?
The reverse recovery charge (Qrr) is 52 nC.