Overview
The STW21N90K5 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ 5 technology. This device is known for its high voltage and current handling capabilities, making it suitable for a variety of power switching applications. The STW21N90K5 is available in a TO-247 package and features a drain-source voltage (VDSS) of 900 V, a typical on-resistance (RDS(on)) of 0.25 Ω, and a continuous drain current (ID) of 18.5 A at 25°C. This MOSFET is designed to offer superior power density and high efficiency, making it an ideal choice for applications requiring high performance and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 900 | V |
| On-Resistance (RDS(on)) | 0.25 (typ.) | Ω |
| Continuous Drain Current (ID) at 25°C | 18.5 | A |
| Continuous Drain Current (ID) at 100°C | 11.6 | A |
| Pulsed Drain Current (IDM) | 74 | A |
| Total Dissipation at 25°C (PTOT) | 250 | W |
| Gate-Source Voltage (VGS) | ±30 | V |
| Thermal Resistance Junction-PCB (Rthj-pcb) | 30 | °C/W |
| Gate-Source Breakdown Voltage (V(BR)GSO) | 30 | V |
Key Features
- SuperMESH™ 5 Technology: This revolutionary technology provides a drastic reduction in on-resistance and ultra-low gate charge, enhancing power density and efficiency.
- Avalanche-Rugged: The device is 100% avalanche tested, ensuring robustness against voltage transients.
- Zener-Protected Gate: Built-in Zener diodes enhance ESD capability and safely absorb voltage transients from gate to source.
- Low On-Resistance: With a typical RDS(on) of 0.25 Ω, this MOSFET offers superior performance in switching applications.
- High Current Handling: Continuous drain current of 18.5 A at 25°C and pulsed current up to 74 A.
- High Voltage Capability: Drain-source voltage of 900 V, making it suitable for high-voltage applications.
Applications
- Switching Applications: Ideal for power switching in various electronic systems due to its high efficiency and low on-resistance.
- Power Supplies: Suitable for use in high-voltage power supplies and DC-DC converters.
- Motor Control: Can be used in motor control circuits requiring high current and voltage handling.
- Industrial Automation: Applicable in industrial automation systems that demand reliable and efficient power management.
Q & A
- What is the typical on-resistance of the STW21N90K5 MOSFET?
The typical on-resistance (RDS(on)) of the STW21N90K5 is 0.25 Ω.
- What is the maximum drain-source voltage (VDSS) of the STW21N90K5?
The maximum drain-source voltage (VDSS) is 900 V.
- What is the continuous drain current (ID) at 25°C for the STW21N90K5?
The continuous drain current (ID) at 25°C is 18.5 A.
- What is the thermal resistance junction-PCB (Rthj-pcb) of the STW21N90K5?
The thermal resistance junction-PCB (Rthj-pcb) is 30 °C/W.
- Is the STW21N90K5 protected against voltage transients?
Yes, the STW21N90K5 has built-in Zener diodes to protect against voltage transients and enhance ESD capability.
- What is the typical gate-source breakdown voltage (V(BR)GSO) of the STW21N90K5?
The typical gate-source breakdown voltage (V(BR)GSO) is 30 V.
- What are the common applications of the STW21N90K5 MOSFET?
The STW21N90K5 is commonly used in switching applications, power supplies, motor control, and industrial automation.
- What package type is the STW21N90K5 available in?
The STW21N90K5 is available in a TO-247 package.
- What is the maximum pulsed drain current (IDM) of the STW21N90K5?
The maximum pulsed drain current (IDM) is 74 A.
- Is the STW21N90K5 100% avalanche tested?
Yes, the STW21N90K5 is 100% avalanche tested, ensuring its robustness against voltage transients.
