STF21N90K5
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STMicroelectronics STF21N90K5

Manufacturer No:
STF21N90K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 18.5A TO220FP
Delivery:
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Product Introduction

Overview

The STF21N90K5 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ 5 technology. This device is renowned for its high voltage and low on-resistance characteristics, making it ideal for applications requiring superior power density and high efficiency. The STF21N90K5 is available in the TO-220FP package and is designed to handle high current and voltage requirements with enhanced reliability and performance.

Key Specifications

ParameterValueUnit
Drain-Source Breakdown Voltage (VDS)900V
On-Resistance (RDS(on))0.25 (typ.)Ω
Continuous Drain Current (ID) at TC = 25 °C18.5A
Pulsed Drain Current (IDM)74A
Gate-Source Voltage (VGS)±30V
Total Dissipation at TC = 25 °C250W
Thermal Resistance Junction-PCB (Rthj-pcb)30°C/W
Gate-Source Charge (QGS)12 (typ.)nC
Gate-Drain Charge (QGD)25 (typ.)nC
Total Gate Charge (QG)43 (typ.)nC

Key Features

  • Worldwide best RDS(on) and figure of merit (FOM) for high efficiency and power density.
  • Ultra-low gate charge for fast switching times.
  • 100% avalanche tested for robustness and reliability.
  • Zener-protected gate-source to enhance ESD capability and absorb voltage transients.
  • Avalanche-rugged design to handle high voltage and current stress.
  • Available in TO-220FP package for versatile application needs.

Applications

The STF21N90K5 is suitable for a variety of switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • High-power audio amplifiers.
  • Renewable energy systems such as solar and wind power inverters.

Q & A

  1. What is the drain-source breakdown voltage of the STF21N90K5?
    The drain-source breakdown voltage (VDS) is 900 V.
  2. What is the typical on-resistance of the STF21N90K5?
    The typical on-resistance (RDS(on)) is 0.25 Ω.
  3. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current (ID) at TC = 25 °C is 18.5 A.
  4. What is the maximum pulsed drain current?
    The maximum pulsed drain current (IDM) is 74 A.
  5. What is the gate-source voltage range?
    The gate-source voltage (VGS) range is ±30 V.
  6. What is the total dissipation at 25 °C?
    The total dissipation at TC = 25 °C is 250 W.
  7. What is the thermal resistance junction-PCB?
    The thermal resistance junction-PCB (Rthj-pcb) is 30 °C/W.
  8. What are the key features of the SuperMESH™ 5 technology?
    The SuperMESH™ 5 technology offers worldwide best RDS(on) and FOM, ultra-low gate charge, 100% avalanche testing, and Zener-protected gates.
  9. In which package is the STF21N90K5 available?
    The STF21N90K5 is available in the TO-220FP package.
  10. What are some common applications for the STF21N90K5?
    Common applications include power supplies, motor control, industrial automation, high-power audio amplifiers, and renewable energy systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:299mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1645 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STP21N90K5
STP21N90K5
MOSFET N-CH 900V 18.5A TO220-3
STW21N90K5
STW21N90K5
MOSFET N-CH 900V 18.5A TO247-3
STF21N90K5
STF21N90K5
MOSFET N-CH 900V 18.5A TO220FP

Similar Products

Part Number STF21N90K5 STF20N90K5
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 18.5A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 299mOhm @ 9A, 10V 250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1645 pF @ 100 V 1500 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 40W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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