Overview
The STP21N90K5 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ 5 technology. This device is renowned for its high voltage and low on-resistance characteristics, making it ideal for applications requiring superior power density and high efficiency. The SuperMESH™ 5 technology ensures a drastic reduction in on-resistance and ultra-low gate charge, enhancing the overall performance of the MOSFET.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (VDS) | 900 | V |
| On-Resistance (RDS(on)) | 0.25 (typ.) | Ω |
| Continuous Drain Current (ID) at TC = 25 °C | 18.5 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 11.6 | A |
| Pulsed Drain Current (IDM) | 74 | A |
| Total Dissipation at TC = 25 °C | 250 | W |
| Gate-Source Voltage (VGS) | ±30 | V |
| Thermal Resistance Junction-PCB (Rthj-pcb) | 30 | °C/W |
| Package | TO-220 |
Key Features
- Worldwide best RDS(on) and Figure of Merit (FOM) in TO-220 package
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected gate-source to enhance ESD capability and absorb voltage transients
- Avalanche-rugged and high voltage capability
- SuperMESH™ 5 technology for superior power density and high efficiency
Applications
The STP21N90K5 is suitable for various switching applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drives
- Industrial automation
- Renewable energy systems
- High-efficiency power management systems
Q & A
- What is the drain-source breakdown voltage of the STP21N90K5?
The drain-source breakdown voltage (VDS) is 900 V. - What is the typical on-resistance of the STP21N90K5?
The typical on-resistance (RDS(on)) is 0.25 Ω. - What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 18.5 A. - What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is 74 A. - What is the total dissipation at TC = 25 °C?
The total dissipation at TC = 25 °C is 250 W. - What is the gate-source voltage range?
The gate-source voltage (VGS) range is ±30 V. - What is the thermal resistance junction-PCB?
The thermal resistance junction-PCB (Rthj-pcb) is 30 °C/W. - In what package is the STP21N90K5 available?
The STP21N90K5 is available in the TO-220 package. - What technology is used in the STP21N90K5?
The STP21N90K5 uses the SuperMESH™ 5 technology. - Is the STP21N90K5 Zener-protected?
Yes, the STP21N90K5 has built-in Zener diodes to enhance ESD capability and absorb voltage transients.
