STP3NK90Z
  • Share:

STMicroelectronics STP3NK90Z

Manufacturer No:
STP3NK90Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 3A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP3NK90Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is optimized from the well-established PowerMESH technology, offering significant reductions in on-resistance and enhanced dv/dt capability. It is designed for the most demanding applications, particularly in switching scenarios. The STP3NK90Z features built-in Zener protection, minimized gate charge, and very low intrinsic capacitance, making it a robust and efficient choice for various high-voltage applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)900V
Gate-Source Voltage (VGS)±30V
Drain Current (ID) - Continuous at TC = 25 °C3A
Drain Current (ID) - Continuous at TC = 100 °C1.89A
Drain Current (IDM) - Pulsed12A
Total Power Dissipation at TC = 25 °C90W
Thermal Resistance, Junction-to-Case (RthJC)1.38°C/W
On-Resistance (RDS(on)) - Typical3.6Ω
Turn-on Delay Time (td(on))18ns
Rise Time (tr)7ns
Turn-off Delay Time (td(off))45ns
Fall Time (tf)18ns

Key Features

  • Zener-protected for enhanced ESD performance
  • Minimized gate charge for efficient switching
  • Very low intrinsic capacitance
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Available in TO-220 package with ECOPACK options for environmental compliance

Applications

The STP3NK90Z is primarily designed for high-voltage switching applications. Its high dv/dt capability and low on-resistance make it suitable for use in power supplies, motor control, and other high-power electronic systems where reliability and efficiency are critical.

Q & A

  1. What is the maximum drain-source voltage of the STP3NK90Z?
    The maximum drain-source voltage (VDS) is 900 V.
  2. What is the typical on-resistance of the STP3NK90Z?
    The typical on-resistance (RDS(on)) is 3.6 Ω.
  3. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current (ID) at 25 °C is 3 A.
  4. What is the thermal resistance from junction to case (RthJC)?
    The thermal resistance from junction to case (RthJC) is 1.38 °C/W.
  5. What are the key features of the STP3NK90Z?
    The key features include Zener protection, minimized gate charge, very low intrinsic capacitance, and high dv/dt capability.
  6. In which package is the STP3NK90Z available?
    The STP3NK90Z is available in the TO-220 package.
  7. What are the typical switching times for the STP3NK90Z?
    The typical turn-on delay time (td(on)) is 18 ns, rise time (tr) is 7 ns, turn-off delay time (td(off)) is 45 ns, and fall time (tf) is 18 ns.
  8. Is the STP3NK90Z 100% avalanche tested?
    Yes, the STP3NK90Z is 100% avalanche tested.
  9. What are the primary applications of the STP3NK90Z?
    The primary applications include high-voltage switching, power supplies, and motor control.
  10. Does the STP3NK90Z come in environmentally compliant packaging?
    Yes, the STP3NK90Z is available in ECOPACK options for environmental compliance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:22.7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:590 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.14
348

Please send RFQ , we will respond immediately.

Same Series
STP3NK90Z
STP3NK90Z
MOSFET N-CH 900V 3A TO220AB
STP3NK90ZFP
STP3NK90ZFP
MOSFET N-CH 900V 3A TO220FP

Similar Products

Part Number STP3NK90Z STP5NK90Z STP2NK90Z STP3HNK90Z STP3NK50Z STP3NK60Z STP3NK80Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Obsolete Not For New Designs Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 800 V 500 V 600 V 800 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 4.5A (Tc) 2.1A (Tc) 3A (Tc) 2.3A (Tc) 2.4A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.8Ohm @ 1.5A, 10V 2.5Ohm @ 2.25A, 10V 6.5Ohm @ 1.05A, 10V 4.2Ohm @ 1.5A, 10V 3.3Ohm @ 1.15A, 10V 3.6Ohm @ 1.2A, 10V 4.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 22.7 nC @ 10 V 41.5 nC @ 10 V 27 nC @ 10 V 35 nC @ 10 V 15 nC @ 10 V 11.8 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 25 V 1160 pF @ 25 V 485 pF @ 25 V 690 pF @ 25 V 280 pF @ 25 V 311 pF @ 25 V 485 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 90W (Tc) 125W (Tc) 70W (Tc) 90W (Tc) 45W (Tc) 45W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

STD6N80K5
STD6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STM32F427VGT6TR
STM32F427VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F101ZDT6
STM32F101ZDT6
STMicroelectronics
IC MCU 32BIT 384KB FLASH 144LQFP
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
M27C2001-10F1
M27C2001-10F1
STMicroelectronics
IC EPROM 2MBIT PARALLEL 32CDIP
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
L9950
L9950
STMicroelectronics
IC DRIVER DOOR ACTUATOR PWRSO-36
LD39130SJ18R
LD39130SJ18R
STMicroelectronics
IC REG LIN 1.8V 300MA 4FLIPCHIP
BALF-SPI-02D3
BALF-SPI-02D3
STMicroelectronics
BALUN 434MHZ 6WFBGA FCBGA