STP3NK90Z
  • Share:

STMicroelectronics STP3NK90Z

Manufacturer No:
STP3NK90Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 3A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP3NK90Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is optimized from the well-established PowerMESH technology, offering significant reductions in on-resistance and enhanced dv/dt capability. It is designed for the most demanding applications, particularly in switching scenarios. The STP3NK90Z features built-in Zener protection, minimized gate charge, and very low intrinsic capacitance, making it a robust and efficient choice for various high-voltage applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)900V
Gate-Source Voltage (VGS)±30V
Drain Current (ID) - Continuous at TC = 25 °C3A
Drain Current (ID) - Continuous at TC = 100 °C1.89A
Drain Current (IDM) - Pulsed12A
Total Power Dissipation at TC = 25 °C90W
Thermal Resistance, Junction-to-Case (RthJC)1.38°C/W
On-Resistance (RDS(on)) - Typical3.6Ω
Turn-on Delay Time (td(on))18ns
Rise Time (tr)7ns
Turn-off Delay Time (td(off))45ns
Fall Time (tf)18ns

Key Features

  • Zener-protected for enhanced ESD performance
  • Minimized gate charge for efficient switching
  • Very low intrinsic capacitance
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Available in TO-220 package with ECOPACK options for environmental compliance

Applications

The STP3NK90Z is primarily designed for high-voltage switching applications. Its high dv/dt capability and low on-resistance make it suitable for use in power supplies, motor control, and other high-power electronic systems where reliability and efficiency are critical.

Q & A

  1. What is the maximum drain-source voltage of the STP3NK90Z?
    The maximum drain-source voltage (VDS) is 900 V.
  2. What is the typical on-resistance of the STP3NK90Z?
    The typical on-resistance (RDS(on)) is 3.6 Ω.
  3. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current (ID) at 25 °C is 3 A.
  4. What is the thermal resistance from junction to case (RthJC)?
    The thermal resistance from junction to case (RthJC) is 1.38 °C/W.
  5. What are the key features of the STP3NK90Z?
    The key features include Zener protection, minimized gate charge, very low intrinsic capacitance, and high dv/dt capability.
  6. In which package is the STP3NK90Z available?
    The STP3NK90Z is available in the TO-220 package.
  7. What are the typical switching times for the STP3NK90Z?
    The typical turn-on delay time (td(on)) is 18 ns, rise time (tr) is 7 ns, turn-off delay time (td(off)) is 45 ns, and fall time (tf) is 18 ns.
  8. Is the STP3NK90Z 100% avalanche tested?
    Yes, the STP3NK90Z is 100% avalanche tested.
  9. What are the primary applications of the STP3NK90Z?
    The primary applications include high-voltage switching, power supplies, and motor control.
  10. Does the STP3NK90Z come in environmentally compliant packaging?
    Yes, the STP3NK90Z is available in ECOPACK options for environmental compliance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:22.7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:590 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.14
348

Please send RFQ , we will respond immediately.

Same Series
STP3NK90Z
STP3NK90Z
MOSFET N-CH 900V 3A TO220AB
STP3NK90ZFP
STP3NK90ZFP
MOSFET N-CH 900V 3A TO220FP

Similar Products

Part Number STP3NK90Z STP5NK90Z STP2NK90Z STP3HNK90Z STP3NK50Z STP3NK60Z STP3NK80Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Obsolete Not For New Designs Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 800 V 500 V 600 V 800 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 4.5A (Tc) 2.1A (Tc) 3A (Tc) 2.3A (Tc) 2.4A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.8Ohm @ 1.5A, 10V 2.5Ohm @ 2.25A, 10V 6.5Ohm @ 1.05A, 10V 4.2Ohm @ 1.5A, 10V 3.3Ohm @ 1.15A, 10V 3.6Ohm @ 1.2A, 10V 4.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 22.7 nC @ 10 V 41.5 nC @ 10 V 27 nC @ 10 V 35 nC @ 10 V 15 nC @ 10 V 11.8 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 25 V 1160 pF @ 25 V 485 pF @ 25 V 690 pF @ 25 V 280 pF @ 25 V 311 pF @ 25 V 485 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 90W (Tc) 125W (Tc) 70W (Tc) 90W (Tc) 45W (Tc) 45W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P

Related Product By Brand

STTH802CB-TR
STTH802CB-TR
STMicroelectronics
DIODE ARRAY GP 200V 4A DPAK
ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
TDA7718N
TDA7718N
STMicroelectronics
IC AUDIO SIGNAL PROCESSR 28TSSOP
STM32L433RCI6
STM32L433RCI6
STMicroelectronics
IC MCU 32BIT 256KB FLASH 64UFBGA
STM32F091VCT7TR
STM32F091VCT7TR
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100LFQFP
TS339IPT
TS339IPT
STMicroelectronics
IC COMP MICROPWR QUAD V 14 TSSOP
LM293N
LM293N
STMicroelectronics
IC COMPARATOR LP DUAL 8-DIP
M24C32-DRMN3TP/K
M24C32-DRMN3TP/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
VIPER27LDTR
VIPER27LDTR
STMicroelectronics
IC OFFLINE SWITCH FLYBACK 16SO
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
L7824ACV
L7824ACV
STMicroelectronics
IC REG LINEAR 24V 1.5A TO220AB