STP3NK90Z
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STMicroelectronics STP3NK90Z

Manufacturer No:
STP3NK90Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 3A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP3NK90Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is optimized from the well-established PowerMESH technology, offering significant reductions in on-resistance and enhanced dv/dt capability. It is designed for the most demanding applications, particularly in switching scenarios. The STP3NK90Z features built-in Zener protection, minimized gate charge, and very low intrinsic capacitance, making it a robust and efficient choice for various high-voltage applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)900V
Gate-Source Voltage (VGS)±30V
Drain Current (ID) - Continuous at TC = 25 °C3A
Drain Current (ID) - Continuous at TC = 100 °C1.89A
Drain Current (IDM) - Pulsed12A
Total Power Dissipation at TC = 25 °C90W
Thermal Resistance, Junction-to-Case (RthJC)1.38°C/W
On-Resistance (RDS(on)) - Typical3.6Ω
Turn-on Delay Time (td(on))18ns
Rise Time (tr)7ns
Turn-off Delay Time (td(off))45ns
Fall Time (tf)18ns

Key Features

  • Zener-protected for enhanced ESD performance
  • Minimized gate charge for efficient switching
  • Very low intrinsic capacitance
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Available in TO-220 package with ECOPACK options for environmental compliance

Applications

The STP3NK90Z is primarily designed for high-voltage switching applications. Its high dv/dt capability and low on-resistance make it suitable for use in power supplies, motor control, and other high-power electronic systems where reliability and efficiency are critical.

Q & A

  1. What is the maximum drain-source voltage of the STP3NK90Z?
    The maximum drain-source voltage (VDS) is 900 V.
  2. What is the typical on-resistance of the STP3NK90Z?
    The typical on-resistance (RDS(on)) is 3.6 Ω.
  3. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current (ID) at 25 °C is 3 A.
  4. What is the thermal resistance from junction to case (RthJC)?
    The thermal resistance from junction to case (RthJC) is 1.38 °C/W.
  5. What are the key features of the STP3NK90Z?
    The key features include Zener protection, minimized gate charge, very low intrinsic capacitance, and high dv/dt capability.
  6. In which package is the STP3NK90Z available?
    The STP3NK90Z is available in the TO-220 package.
  7. What are the typical switching times for the STP3NK90Z?
    The typical turn-on delay time (td(on)) is 18 ns, rise time (tr) is 7 ns, turn-off delay time (td(off)) is 45 ns, and fall time (tf) is 18 ns.
  8. Is the STP3NK90Z 100% avalanche tested?
    Yes, the STP3NK90Z is 100% avalanche tested.
  9. What are the primary applications of the STP3NK90Z?
    The primary applications include high-voltage switching, power supplies, and motor control.
  10. Does the STP3NK90Z come in environmentally compliant packaging?
    Yes, the STP3NK90Z is available in ECOPACK options for environmental compliance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:22.7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:590 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STP3NK90Z
STP3NK90Z
MOSFET N-CH 900V 3A TO220AB
STP3NK90ZFP
STP3NK90ZFP
MOSFET N-CH 900V 3A TO220FP

Similar Products

Part Number STP3NK90Z STP5NK90Z STP2NK90Z STP3HNK90Z STP3NK50Z STP3NK60Z STP3NK80Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Obsolete Not For New Designs Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 800 V 500 V 600 V 800 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 4.5A (Tc) 2.1A (Tc) 3A (Tc) 2.3A (Tc) 2.4A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.8Ohm @ 1.5A, 10V 2.5Ohm @ 2.25A, 10V 6.5Ohm @ 1.05A, 10V 4.2Ohm @ 1.5A, 10V 3.3Ohm @ 1.15A, 10V 3.6Ohm @ 1.2A, 10V 4.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 22.7 nC @ 10 V 41.5 nC @ 10 V 27 nC @ 10 V 35 nC @ 10 V 15 nC @ 10 V 11.8 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 25 V 1160 pF @ 25 V 485 pF @ 25 V 690 pF @ 25 V 280 pF @ 25 V 311 pF @ 25 V 485 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 90W (Tc) 125W (Tc) 70W (Tc) 90W (Tc) 45W (Tc) 45W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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