Overview
The STP3NK90Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is optimized from the well-established PowerMESH technology, offering significant reductions in on-resistance and enhanced dv/dt capability. It is designed for the most demanding applications, particularly in switching scenarios. The STP3NK90Z features built-in Zener protection, minimized gate charge, and very low intrinsic capacitance, making it a robust and efficient choice for various high-voltage applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (VDS) | 900 | V |
Gate-Source Voltage (VGS) | ±30 | V |
Drain Current (ID) - Continuous at TC = 25 °C | 3 | A |
Drain Current (ID) - Continuous at TC = 100 °C | 1.89 | A |
Drain Current (IDM) - Pulsed | 12 | A |
Total Power Dissipation at TC = 25 °C | 90 | W |
Thermal Resistance, Junction-to-Case (RthJC) | 1.38 | °C/W |
On-Resistance (RDS(on)) - Typical | 3.6 | Ω |
Turn-on Delay Time (td(on)) | 18 | ns |
Rise Time (tr) | 7 | ns |
Turn-off Delay Time (td(off)) | 45 | ns |
Fall Time (tf) | 18 | ns |
Key Features
- Zener-protected for enhanced ESD performance
- Minimized gate charge for efficient switching
- Very low intrinsic capacitance
- Extremely high dv/dt capability
- 100% avalanche tested
- Available in TO-220 package with ECOPACK options for environmental compliance
Applications
The STP3NK90Z is primarily designed for high-voltage switching applications. Its high dv/dt capability and low on-resistance make it suitable for use in power supplies, motor control, and other high-power electronic systems where reliability and efficiency are critical.
Q & A
- What is the maximum drain-source voltage of the STP3NK90Z?
The maximum drain-source voltage (VDS) is 900 V. - What is the typical on-resistance of the STP3NK90Z?
The typical on-resistance (RDS(on)) is 3.6 Ω. - What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 3 A. - What is the thermal resistance from junction to case (RthJC)?
The thermal resistance from junction to case (RthJC) is 1.38 °C/W. - What are the key features of the STP3NK90Z?
The key features include Zener protection, minimized gate charge, very low intrinsic capacitance, and high dv/dt capability. - In which package is the STP3NK90Z available?
The STP3NK90Z is available in the TO-220 package. - What are the typical switching times for the STP3NK90Z?
The typical turn-on delay time (td(on)) is 18 ns, rise time (tr) is 7 ns, turn-off delay time (td(off)) is 45 ns, and fall time (tf) is 18 ns. - Is the STP3NK90Z 100% avalanche tested?
Yes, the STP3NK90Z is 100% avalanche tested. - What are the primary applications of the STP3NK90Z?
The primary applications include high-voltage switching, power supplies, and motor control. - Does the STP3NK90Z come in environmentally compliant packaging?
Yes, the STP3NK90Z is available in ECOPACK options for environmental compliance.