STP3NK90ZFP
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STMicroelectronics STP3NK90ZFP

Manufacturer No:
STP3NK90ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 3A TO220FP
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Product Introduction

Overview

The STP3NK90ZFP is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is optimized from the well-established PowerMESH technology, offering significant reductions in on-resistance and enhanced dv/dt capability. The STP3NK90ZFP is packaged in a TO-220FP package, making it suitable for a variety of high-power switching applications. It features built-in Zener protection, minimized gate charge, and very low intrinsic capacitance, ensuring high reliability and performance in demanding environments.

Key Specifications

Parameter Value Unit
VDS (Drain-source voltage) 900 V
VGS (Gate-source voltage) ±30 V
ID (Continuous drain current at TC = 25 °C) 3 A
ID (Continuous drain current at TC = 100 °C) 1.89 A
IDM (Pulsed drain current) 12 A
PTOT (Total power dissipation at TC = 25 °C) 25 W
RDS(on) max. (On-resistance) 4.8 Ω
RthJC (Thermal resistance, junction-to-case) 5 °C/W
RthJA (Thermal resistance, junction-to-ambient) 62.5 °C/W
Tstg (Storage temperature range) -55 to 150 °C
TJ (Operating junction temperature range) -55 to 150 °C

Key Features

  • Zener-protected for enhanced ESD performance and device integrity.
  • Minimized gate charge for efficient switching.
  • Very low intrinsic capacitance to reduce switching losses.
  • Extremely high dv/dt capability for demanding applications.
  • 100% avalanche tested to ensure reliability under high stress conditions.

Applications

The STP3NK90ZFP is designed for various high-power switching applications, including:

  • Power supplies and converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Industrial and automotive power management systems.

Q & A

  1. What is the maximum drain-source voltage of the STP3NK90ZFP?

    The maximum drain-source voltage (VDS) is 900 V.

  2. What is the typical on-resistance of the STP3NK90ZFP?

    The typical on-resistance (RDS(on)) is 3.6 Ω.

  3. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 3 A.

  4. What is the thermal resistance from junction to case?

    The thermal resistance from junction to case (RthJC) is 5 °C/W.

  5. What is the storage temperature range for the STP3NK90ZFP?

    The storage temperature range is -55 to 150 °C.

  6. Does the STP3NK90ZFP have built-in Zener protection?
  7. What is the maximum pulsed drain current?

    The maximum pulsed drain current (IDM) is 12 A.

  8. What is the total power dissipation at 25 °C?

    The total power dissipation (PTOT) at 25 °C is 25 W.

  9. What are the typical switching times for the STP3NK90ZFP?

    The typical turn-on delay time (td(on)) is 18 ns, rise time (tr) is 7 ns, turn-off delay time (td(off)) is 45 ns, and fall time (tf) is 18 ns.

  10. In what package is the STP3NK90ZFP available?

    The STP3NK90ZFP is available in the TO-220FP package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:22.7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:590 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STP3NK90Z
STP3NK90Z
MOSFET N-CH 900V 3A TO220AB
STP3NK90ZFP
STP3NK90ZFP
MOSFET N-CH 900V 3A TO220FP

Similar Products

Part Number STP3NK90ZFP STP3NK60ZFP
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 600 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.8Ohm @ 1.5A, 10V 3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 22.7 nC @ 10 V 11.8 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 25 V 311 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 25W (Tc) 20W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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