STD3NK90ZT4
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STMicroelectronics STD3NK90ZT4

Manufacturer No:
STD3NK90ZT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 900V 3A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD3NK90ZT4 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is designed to provide high performance and reliability in various power management applications. It features Zener protection, enhancing its robustness against voltage spikes and ensuring stable operation under demanding conditions.

Key Specifications

ParameterValue
Voltage Rating (Vds)900 V
Current Rating (Id)3 A
Power Dissipation (Pd)12 W (at Tc = 25°C)
Package TypeTO-252 (DPAK)
TechnologySuperMESH
Zener ProtectionYes

Key Features

  • Zener protection for enhanced robustness against voltage spikes
  • High-voltage capability with a Vds rating of 900 V
  • High current handling up to 3 A
  • Low on-resistance (Rds(on)) for efficient power management
  • Compact TO-252 (DPAK) package for space-saving designs
  • Developed using the advanced SuperMESH technology for improved performance and reliability

Applications

The STD3NK90ZT4 is suitable for a variety of high-voltage applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial automation and control systems
  • High-voltage power management in consumer and industrial electronics

Q & A

  1. What is the voltage rating of the STD3NK90ZT4? The voltage rating (Vds) of the STD3NK90ZT4 is 900 V.
  2. What is the current rating of the STD3NK90ZT4? The current rating (Id) of the STD3NK90ZT4 is 3 A.
  3. What package type does the STD3NK90ZT4 use? The STD3NK90ZT4 uses the TO-252 (DPAK) package type.
  4. Does the STD3NK90ZT4 have Zener protection? Yes, the STD3NK90ZT4 features Zener protection.
  5. What technology is used in the STD3NK90ZT4? The STD3NK90ZT4 is developed using the SuperMESH technology.
  6. What is the power dissipation of the STD3NK90ZT4? The power dissipation (Pd) of the STD3NK90ZT4 is 12 W at Tc = 25°C.
  7. In what types of applications is the STD3NK90ZT4 commonly used? The STD3NK90ZT4 is commonly used in power supplies, DC-DC converters, motor control systems, and industrial automation.
  8. Why is the SuperMESH technology important in the STD3NK90ZT4? The SuperMESH technology enhances the performance and reliability of the MOSFET by optimizing its structure for better high-voltage handling and lower on-resistance.
  9. Is the STD3NK90ZT4 suitable for high-voltage power management? Yes, the STD3NK90ZT4 is designed for high-voltage power management applications.
  10. Where can I purchase the STD3NK90ZT4? The STD3NK90ZT4 can be purchased from various electronic component distributors such as Digi-Key, Mouser, and Transfer Multisort Elektronik.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:22.7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:590 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252 (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD3NK90ZT4 STD2NK90ZT4 STD3NK50ZT4 STD3NK60ZT4 STD3NK80ZT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 500 V 600 V 800 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 2.1A (Tc) 2.3A (Tc) 2.4A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.8Ohm @ 1.5A, 10V 6.5Ohm @ 1.05A, 10V 3.3Ohm @ 1.15A, 10V 3.6Ohm @ 1.2A, 10V 4.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 22.7 nC @ 10 V 27 nC @ 10 V 15 nC @ 10 V 11.8 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 25 V 485 pF @ 25 V 280 pF @ 25 V 311 pF @ 25 V 485 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 90W (Tc) 70W (Tc) 45W (Tc) 45W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252 (D-Pak) DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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