STD2NK90ZT4
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STMicroelectronics STD2NK90ZT4

Manufacturer No:
STD2NK90ZT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 900V 2.1A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD2NK90ZT4 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is designed to provide high performance and reliability in various power management applications. It features Zener protection, which enhances its robustness against voltage spikes and other transient events. The STD2NK90ZT4 is packaged in a DPAK (TO-252) package, making it suitable for a wide range of power electronics applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)900 V
ID (Drain Current)2.1 A
RDS(on) (On-Resistance)4.7 Ω (typical)
PD (Power Dissipation)70 W
PackageDPAK (TO-252)
ESD ProtectionZener-protected

Key Features

  • High-voltage operation up to 900 V
  • Low on-resistance (RDS(on)) of 4.7 Ω (typical)
  • High drain current capability of 2.1 A
  • Zener protection for enhanced robustness against voltage spikes
  • SuperMESH technology for improved performance and reliability
  • DPAK (TO-252) package for compact and efficient design

Applications

The STD2NK90ZT4 is suitable for various high-voltage power management applications, including:

  • Switch-mode power supplies
  • Motor control and drives
  • Power factor correction (PFC) circuits
  • High-voltage DC-DC converters
  • Industrial and automotive power systems

Q & A

  1. What is the maximum drain-source voltage of the STD2NK90ZT4?
    The maximum drain-source voltage is 900 V.
  2. What is the typical on-resistance of the STD2NK90ZT4?
    The typical on-resistance is 4.7 Ω.
  3. What is the maximum drain current of the STD2NK90ZT4?
    The maximum drain current is 2.1 A.
  4. What type of protection does the STD2NK90ZT4 have?
    The STD2NK90ZT4 has Zener protection.
  5. In what package is the STD2NK90ZT4 available?
    The STD2NK90ZT4 is available in a DPAK (TO-252) package.
  6. What technology is used in the STD2NK90ZT4?
    The STD2NK90ZT4 uses the SuperMESH technology.
  7. What are some common applications of the STD2NK90ZT4?
    Common applications include switch-mode power supplies, motor control and drives, power factor correction circuits, and high-voltage DC-DC converters.
  8. What is the power dissipation capability of the STD2NK90ZT4?
    The power dissipation capability is 70 W.
  9. Is the STD2NK90ZT4 suitable for automotive applications?
    Yes, the STD2NK90ZT4 is suitable for automotive power systems.
  10. Where can I find detailed specifications for the STD2NK90ZT4?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Mouser and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.5Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:485 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

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Same Series
STP2NK90Z
STP2NK90Z
MOSFET N-CH 900V 2.1A TO220AB
STD2NK90Z-1
STD2NK90Z-1
MOSFET N-CH 900V 2.1A IPAK

Similar Products

Part Number STD2NK90ZT4 STD3NK90ZT4 STD2NK70ZT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 700 V
Current - Continuous Drain (Id) @ 25°C 2.1A (Tc) 3A (Tc) 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 6.5Ohm @ 1.05A, 10V 4.8Ohm @ 1.5A, 10V 7Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 22.7 nC @ 10 V 11.4 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 485 pF @ 25 V 590 pF @ 25 V 280 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 70W (Tc) 90W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK TO-252 (D-Pak) DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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