STP2NK90Z
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STMicroelectronics STP2NK90Z

Manufacturer No:
STP2NK90Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 2.1A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STP2NK90Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is part of the SuperMESH™ series, which is an optimization of the well-established PowerMESH™ layout. It is designed to offer a significant reduction in on-resistance and enhanced dv/dt capability, making it suitable for the most demanding applications. The STP2NK90Z is available in TO-220, DPAK, and IPAK packages, catering to various design requirements.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 900 V
Gate-Source Voltage (VGS) ±30 V
Continuous Drain Current (ID) at TC = 25 °C 2.1 A
Continuous Drain Current (ID) at TC = 100 °C 1.3 A
Pulsed Drain Current (IDM) 8.4 A
Total Dissipation at TC = 25 °C (PTOT) 70 W
On-Resistance (RDS(on)) < 6.5 Ω
Thermal Resistance Junction-Case (Rthj-case) 1.78 °C/W
Operating Junction Temperature Range (Tj) -55 to 150 °C
Storage Temperature Range (Tstg) -55 to 150 °C

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested, ensuring robustness against high-energy pulses.
  • Gate charge minimized, reducing switching losses and improving efficiency.
  • Very low intrinsic capacitance, enhancing high-frequency performance.
  • Zener-protected gate-source, improving ESD performance and eliminating the need for external protection components.
  • Very good manufacturing repeatibility, ensuring consistent performance across devices.

Applications

  • High current, high speed switching applications.
  • Ideal for off-line power supplies, adaptors, and Power Factor Correction (PFC) circuits.
  • Switching applications requiring high dv/dt capability and low on-resistance.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP2NK90Z?

    The maximum drain-source voltage (VDS) is 900 V.

  2. What is the typical on-resistance (RDS(on)) of the STP2NK90Z?

    The typical on-resistance (RDS(on)) is less than 6.5 Ω.

  3. What is the continuous drain current (ID) at 25 °C?

    The continuous drain current (ID) at 25 °C is 2.1 A.

  4. What is the thermal resistance junction-case (Rthj-case) for the TO-220 package?

    The thermal resistance junction-case (Rthj-case) is 1.78 °C/W.

  5. What are the key features of the SuperMESH™ technology used in the STP2NK90Z?

    The key features include extremely high dv/dt capability, 100% avalanche testing, minimized gate charge, very low intrinsic capacitance, and built-in Zener protection for the gate-source.

  6. What are the typical applications for the STP2NK90Z?

    Typical applications include high current, high speed switching, off-line power supplies, adaptors, and Power Factor Correction (PFC) circuits.

  7. What packages are available for the STP2NK90Z?

    The STP2NK90Z is available in TO-220, DPAK, and IPAK packages.

  8. What is the operating junction temperature range for the STP2NK90Z?

    The operating junction temperature range is -55 to 150 °C.

  9. Does the STP2NK90Z have built-in ESD protection?
  10. What is the total dissipation power (PTOT) at 25 °C for the STP2NK90Z?

    The total dissipation power (PTOT) at 25 °C is 70 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.5Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:485 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STP2NK90Z
STP2NK90Z
MOSFET N-CH 900V 2.1A TO220AB
STD2NK90Z-1
STD2NK90Z-1
MOSFET N-CH 900V 2.1A IPAK

Similar Products

Part Number STP2NK90Z STP3NK90Z STP2NK60Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 600 V
Current - Continuous Drain (Id) @ 25°C 2.1A (Tc) 3A (Tc) 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 6.5Ohm @ 1.05A, 10V 4.8Ohm @ 1.5A, 10V 8Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 22.7 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 485 pF @ 25 V 590 pF @ 25 V 170 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 70W (Tc) 90W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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