STP2NK60Z
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STMicroelectronics STP2NK60Z

Manufacturer No:
STP2NK60Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 1.4A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP2NK60Z is a Zener-Protected SuperMESH™ Power MOSFET produced by STMicroelectronics. This device is part of the SuperMESH™ series, which is optimized from ST's well-established strip-based PowerMESH™ layout. The STP2NK60Z is designed to offer high performance and reliability in various power switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±30 V
Drain Current (continuous) at TC = 25 °C 6 A
Drain Current (continuous) at TC = 100 °C 3.8 A
Pulse Drain Current (IDM) 24 A
Total Dissipation at TC = 25 °C (TO-220/D²/I²PAK) 110 W
Total Dissipation at TC = 25 °C (TO-220FP) 30 W
On-Resistance (RDS(on)) < 1.2 Ω
Thermal Resistance Junction-Case (Rthj-case) 1.14 (TO-220/D²/I²PAK), 4.2 (TO-220FP) °C/W
Operating Junction Temperature (Tj) -55 to 150 °C

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Minimized gate charge, which reduces switching losses and improves efficiency.
  • Zener protection, enhancing the device's reliability and protection against voltage spikes.
  • Available in various packages including TO-220, TO-220FP, D²PAK, and I²PAK, offering flexibility in design.
  • ECOPACK® packages with lead-free second level interconnect, meeting environmental requirements.

Applications

The STP2NK60Z is designed for use in a variety of power switching applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Industrial and automotive power systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP2NK60Z?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the continuous drain current at 25 °C and 100 °C?

    The continuous drain current is 6 A at 25 °C and 3.8 A at 100 °C.

  3. What is the total dissipation power for TO-220 and TO-220FP packages?

    The total dissipation power is 110 W for TO-220/D²/I²PAK and 30 W for TO-220FP.

  4. What is the on-resistance (RDS(on)) of the STP2NK60Z?

    The on-resistance (RDS(on)) is less than 1.2 Ω.

  5. What are the thermal resistance values for junction-case and junction-ambient?

    The thermal resistance junction-case is 1.14 °C/W for TO-220/D²/I²PAK and 4.2 °C/W for TO-220FP. The thermal resistance junction-ambient is 62.5 °C/W.

  6. What is the operating junction temperature range?

    The operating junction temperature range is -55 to 150 °C.

  7. What are the key features of the SuperMESH™ series?

    The key features include high dv/dt capability, 100% avalanche testing, minimized gate charge, and Zener protection.

  8. In which packages is the STP2NK60Z available?

    The STP2NK60Z is available in TO-220, TO-220FP, D²PAK, and I²PAK packages.

  9. What environmental compliance does the ECOPACK® package meet?

    The ECOPACK® package meets environmental requirements with lead-free second level interconnect.

  10. What are typical applications for the STP2NK60Z?

    Typical applications include power supplies, DC-DC converters, motor control, high-frequency switching circuits, and industrial and automotive power systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:170 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STD2NK60Z-1
STD2NK60Z-1
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STQ2NK60ZR-AP
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STF2NK60Z
STF2NK60Z
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Similar Products

Part Number STP2NK60Z STP4NK60Z STP3NK60Z STP2NK90Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 900 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) 4A (Tc) 2.4A (Tc) 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 700mA, 10V 2Ohm @ 2A, 10V 3.6Ohm @ 1.2A, 10V 6.5Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 26 nC @ 10 V 11.8 nC @ 10 V 27 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 25 V 510 pF @ 25 V 311 pF @ 25 V 485 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 45W (Tc) 70W (Tc) 45W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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