Overview
The STD3NK50ZT4 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is part of STMicroelectronics' broad portfolio of power MOSFETs, designed to meet the demands of various high-power applications. The SuperMESH™ technology is an optimization of the well-established PowerMESH™, offering significant reductions in on-resistance and enhanced dv/dt capability.
This MOSFET is Zener-protected, ensuring high reliability and robustness against electrical stress. It is packaged in a DPAK (TO-252) package, which is compact and thermally efficient, making it suitable for applications where space and thermal management are critical.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 500 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Drain current (continuous) at TC = 25 °C (ID) | 2.3 | A |
| Drain current (continuous) at TC = 100 °C (ID) | 1.45 | A |
| Drain current (pulsed) (IDM) | 9.2 | A |
| Total dissipation at TC = 25 °C (PTOT) | 45 | W |
| Peak diode recovery voltage slope (dv/dt) | 4.5 | V/ns |
| Operating junction temperature range (Tj) | -55 to 150 | °C |
| Static drain-source on resistance (RDS(on)) | 2.8 (typ.), 3.3 (max.) | Ω |
| Gate charge (Qg) | 11 to 15 | nC |
| Thermal resistance junction-case (Rthj-case) | 2.78 | °C/W |
| Thermal resistance junction-ambient (Rthj-amb) | 100 | °C/W |
Key Features
- Extremely high dv/dt capability, making it suitable for demanding applications.
- 100% avalanche tested, ensuring robustness against electrical stress.
- Gate charge minimized, reducing switching losses.
- Very low intrinsic capacitance, enhancing high-frequency performance.
- Zener-protected, providing built-in ESD protection and eliminating the need for additional external components.
Applications
The STD3NK50ZT4 is designed for various high-power switching applications, including:
- Switching power supplies (SMPS).
- Data centers.
- Solar microinverters.
- Industrial and automotive systems where high reliability and efficiency are critical.
Q & A
- What is the maximum drain-source voltage (VDS) of the STD3NK50ZT4?
The maximum drain-source voltage (VDS) is 500 V.
- What is the typical static drain-source on resistance (RDS(on)) of the STD3NK50ZT4?
The typical static drain-source on resistance (RDS(on)) is 2.8 Ω.
- What is the maximum continuous drain current (ID) at TC = 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 2.3 A.
- What is the peak diode recovery voltage slope (dv/dt) of the STD3NK50ZT4?
The peak diode recovery voltage slope (dv/dt) is 4.5 V/ns.
- What is the operating junction temperature range (Tj) of the STD3NK50ZT4?
The operating junction temperature range (Tj) is -55 to 150 °C.
- Is the STD3NK50ZT4 Zener-protected?
Yes, the STD3NK50ZT4 is Zener-protected, which enhances its ESD performance and eliminates the need for additional external components.
- What package type is the STD3NK50ZT4 available in?
The STD3NK50ZT4 is available in a DPAK (TO-252) package.
- What are some typical applications of the STD3NK50ZT4?
Typical applications include switching power supplies, data centers, solar microinverters, and industrial and automotive systems.
- What is the thermal resistance junction-case (Rthj-case) of the STD3NK50ZT4?
The thermal resistance junction-case (Rthj-case) is 2.78 °C/W.
- Is the STD3NK50ZT4 100% avalanche tested?
Yes, the STD3NK50ZT4 is 100% avalanche tested, ensuring its robustness against electrical stress.
