Overview
The STD5NK50ZT4 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is designed to offer high performance and reliability in various power management applications. It is available in the DPAK (TO-252) package, making it suitable for a wide range of switching and power management tasks.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 500 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 4.4 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 2.7 | A |
| Pulsed Drain Current (IDM) | 17.6 | A |
| On-Resistance (RDS(on)) at VGS = 10 V, ID = 2.2 A | 1.22 Ω (typ.) | Ω |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 500 | V |
| Gate Body Leakage Current (IGSS) | ±1 µA (max.) | µA |
| Turn-On Delay Time (td(on)) | 15 ns (typ.) | ns |
| Turn-Off Delay Time (td(off)) | 32 ns (typ.) | ns |
| Rise Time (tr) | 10 ns (typ.) | ns |
| Fall Time (tf) | 15 ns (typ.) | ns |
Key Features
- SuperMESH™ Technology: Optimized for low on-resistance and high dv/dt capability.
- Zener Protection: Built-in back-to-back Zener diodes enhance ESD performance and device integrity.
- Low Intrinsic Capacitance: Minimized gate charge for efficient switching.
- High Avalanche Capability: 100% avalanche tested with a single pulse avalanche energy of 130 mJ.
- Thermal Performance: Suitable for mounting on a 1-inch² FR-4, 2oz Cu board.
Applications
- Switching Applications: Ideal for high-frequency switching in power supplies, motor control, and other high-power electronic systems.
- Power Management: Suitable for use in DC-DC converters, power factor correction (PFC), and other power management circuits.
- Industrial and Automotive Systems: Can be used in various industrial and automotive applications requiring high reliability and performance.
Q & A
- What is the maximum drain-source voltage of the STD5NK50ZT4?
The maximum drain-source voltage (VDS) is 500 V.
- What is the typical on-resistance of the STD5NK50ZT4?
The typical on-resistance (RDS(on)) is 1.22 Ω at VGS = 10 V and ID = 2.2 A.
- What is the continuous drain current rating at 25 °C?
The continuous drain current (ID) at TC = 25 °C is 4.4 A.
- What is the pulsed drain current rating?
The pulsed drain current (IDM) is 17.6 A.
- What is the turn-on delay time of the STD5NK50ZT4?
The turn-on delay time (td(on)) is typically 15 ns.
- Does the STD5NK50ZT4 have built-in Zener protection?
Yes, it has built-in back-to-back Zener diodes for enhanced ESD performance and device integrity.
- What is the single pulse avalanche energy of the STD5NK50ZT4?
The single pulse avalanche energy (EAS) is 130 mJ.
- In what package is the STD5NK50ZT4 available?
The STD5NK50ZT4 is available in the DPAK (TO-252) package.
- What are some typical applications of the STD5NK50ZT4?
It is typically used in switching applications, power management, DC-DC converters, and other high-power electronic systems.
- Is the STD5NK50ZT4 suitable for high-frequency switching?
Yes, it is optimized for high-frequency switching with minimized gate charge and low intrinsic capacitance.
