STD5NK50ZT4
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STMicroelectronics STD5NK50ZT4

Manufacturer No:
STD5NK50ZT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 500V 4.4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD5NK50ZT4 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is designed to offer high performance and reliability in various power management applications. It is available in the DPAK (TO-252) package, making it suitable for a wide range of switching and power management tasks.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 500 V
Gate-Source Voltage (VGS) ±30 V
Continuous Drain Current (ID) at TC = 25 °C 4.4 A
Continuous Drain Current (ID) at TC = 100 °C 2.7 A
Pulsed Drain Current (IDM) 17.6 A
On-Resistance (RDS(on)) at VGS = 10 V, ID = 2.2 A 1.22 Ω (typ.) Ω
Drain-Source Breakdown Voltage (V(BR)DSS) 500 V
Gate Body Leakage Current (IGSS) ±1 µA (max.) µA
Turn-On Delay Time (td(on)) 15 ns (typ.) ns
Turn-Off Delay Time (td(off)) 32 ns (typ.) ns
Rise Time (tr) 10 ns (typ.) ns
Fall Time (tf) 15 ns (typ.) ns

Key Features

  • SuperMESH™ Technology: Optimized for low on-resistance and high dv/dt capability.
  • Zener Protection: Built-in back-to-back Zener diodes enhance ESD performance and device integrity.
  • Low Intrinsic Capacitance: Minimized gate charge for efficient switching.
  • High Avalanche Capability: 100% avalanche tested with a single pulse avalanche energy of 130 mJ.
  • Thermal Performance: Suitable for mounting on a 1-inch² FR-4, 2oz Cu board.

Applications

  • Switching Applications: Ideal for high-frequency switching in power supplies, motor control, and other high-power electronic systems.
  • Power Management: Suitable for use in DC-DC converters, power factor correction (PFC), and other power management circuits.
  • Industrial and Automotive Systems: Can be used in various industrial and automotive applications requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STD5NK50ZT4?

    The maximum drain-source voltage (VDS) is 500 V.

  2. What is the typical on-resistance of the STD5NK50ZT4?

    The typical on-resistance (RDS(on)) is 1.22 Ω at VGS = 10 V and ID = 2.2 A.

  3. What is the continuous drain current rating at 25 °C?

    The continuous drain current (ID) at TC = 25 °C is 4.4 A.

  4. What is the pulsed drain current rating?

    The pulsed drain current (IDM) is 17.6 A.

  5. What is the turn-on delay time of the STD5NK50ZT4?

    The turn-on delay time (td(on)) is typically 15 ns.

  6. Does the STD5NK50ZT4 have built-in Zener protection?

    Yes, it has built-in back-to-back Zener diodes for enhanced ESD performance and device integrity.

  7. What is the single pulse avalanche energy of the STD5NK50ZT4?

    The single pulse avalanche energy (EAS) is 130 mJ.

  8. In what package is the STD5NK50ZT4 available?

    The STD5NK50ZT4 is available in the DPAK (TO-252) package.

  9. What are some typical applications of the STD5NK50ZT4?

    It is typically used in switching applications, power management, DC-DC converters, and other high-power electronic systems.

  10. Is the STD5NK50ZT4 suitable for high-frequency switching?

    Yes, it is optimized for high-frequency switching with minimized gate charge and low intrinsic capacitance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:535 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD5NK50ZT4 STD6NK50ZT4 STD5NK60ZT4 STD3NK50ZT4 STD4NK50ZT4 STD5NK40ZT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Not For New Designs Not For New Designs Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 600 V 500 V 500 V 400 V
Current - Continuous Drain (Id) @ 25°C 4.4A (Tc) 5.6A (Tc) 5A (Tc) 2.3A (Tc) 3A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.2A, 10V 1.2Ohm @ 2.8A, 10V 1.6Ohm @ 2.5A, 10V 3.3Ohm @ 1.15A, 10V 2.7Ohm @ 1.5A, 10V 1.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V 24.6 nC @ 10 V 34 nC @ 10 V 15 nC @ 10 V 12 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 25 V 690 pF @ 25 V 690 pF @ 25 V 280 pF @ 25 V 310 pF @ 25 V 305 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 70W (Tc) 90W (Tc) 90W (Tc) 45W (Tc) 45W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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