Overview
The STD5NK60ZT4 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is designed to offer a significant reduction in on-resistance and enhanced dv/dt capability, making it suitable for the most demanding applications. The STD5NK60ZT4 is packaged in a DPAK (TO-252) package and features Zener protection, low input capacitance, and minimized gate charge.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 600 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Continuous drain current (ID) at TC = 25 °C | 5 | A |
| Continuous drain current (ID) at TC = 100 °C | 3.16 | A |
| Pulsed drain current (IDM) | 20 | A |
| Total power dissipation (PTOT) at TC = 25 °C | 90 | W |
| Static drain-source on-resistance (RDS(on)) | 1.2 - 1.6 | Ω |
| Gate threshold voltage (VGS(th)) | 3.00 - 4.50 | V |
| Thermal resistance, junction-to-case (RthJC) | 1.39 | °C/W |
| Thermal resistance, junction-to-ambient (RthJA) | 50 | °C/W |
Key Features
- Zener-protected to enhance reliability and robustness.
- Low input capacitance and minimized gate charge for efficient switching.
- Very low intrinsic capacitance.
- 100% avalanche tested to ensure durability under high stress conditions.
- High dv/dt capability for demanding applications.
Applications
The STD5NK60ZT4 is primarily used in switching applications where high voltage and current handling are required. These include power supplies, motor control systems, and other high-power electronic devices that demand reliable and efficient switching performance.
Q & A
- What is the maximum drain-source voltage (VDS) of the STD5NK60ZT4?
The maximum drain-source voltage (VDS) is 600 V. - What is the typical on-resistance (RDS(on)) of the STD5NK60ZT4?
The typical on-resistance (RDS(on)) is 1.2 Ω, with a maximum of 1.6 Ω. - What is the continuous drain current (ID) at 25 °C?
The continuous drain current (ID) at 25 °C is 5 A. - What is the thermal resistance, junction-to-case (RthJC), of the STD5NK60ZT4?
The thermal resistance, junction-to-case (RthJC), is 1.39 °C/W. - What are the key features of the SuperMESH technology used in the STD5NK60ZT4?
The SuperMESH technology offers a significant reduction in on-resistance, low input capacitance, minimized gate charge, and high dv/dt capability. - What type of package does the STD5NK60ZT4 come in?
The STD5NK60ZT4 is packaged in a DPAK (TO-252) package. - What are the typical applications of the STD5NK60ZT4?
The STD5NK60ZT4 is used in switching applications, including power supplies and motor control systems. - Is the STD5NK60ZT4 100% avalanche tested?
Yes, the STD5NK60ZT4 is 100% avalanche tested. - What is the gate threshold voltage (VGS(th)) range of the STD5NK60ZT4?
The gate threshold voltage (VGS(th)) range is from 3.00 V to 4.50 V. - What is the maximum total power dissipation (PTOT) at 25 °C?
The maximum total power dissipation (PTOT) at 25 °C is 90 W.
