STP5NK60ZFP
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STMicroelectronics STP5NK60ZFP

Manufacturer No:
STP5NK60ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 5A TO220FP
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STP5NK60ZFP is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is designed to offer a significant reduction in on-resistance and enhanced dv/dt capability, making it suitable for the most demanding applications. The STP5NK60ZFP features a breakdown voltage of 600 V, a typical on-resistance of 1.2 Ohms, and a drain current of 5 A. It is packaged in a TO-220FP package, which is known for its thermal efficiency and compact design.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (On-Resistance) 1.2 Ω
ID (Drain Current) 5 A
VGS(th) (Gate-Source Threshold Voltage) 3.75 V @ 50 μA
Package TO-220FP
Operating Temperature Range -55 to 150 °C
RoHS Compliance Ecopack2

Key Features

  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitance
  • Zener-protected
  • High dv/dt capability
  • Compact TO-220FP package for high electrical and thermal efficiency

Applications

The STP5NK60ZFP is suitable for a variety of high-voltage applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Data centers
  • Solar microinverters
  • Industrial and automotive systems requiring high reliability and efficiency

Q & A

  1. What is the breakdown voltage of the STP5NK60ZFP?

    The breakdown voltage (VDS) of the STP5NK60ZFP is 600 V.

  2. What is the typical on-resistance of the STP5NK60ZFP?

    The typical on-resistance (RDS(on)) of the STP5NK60ZFP is 1.2 Ohms.

  3. What is the maximum drain current of the STP5NK60ZFP?

    The maximum drain current (ID) of the STP5NK60ZFP is 5 A.

  4. What package type is used for the STP5NK60ZFP?

    The STP5NK60ZFP is packaged in a TO-220FP package.

  5. Is the STP5NK60ZFP RoHS compliant?

    Yes, the STP5NK60ZFP is RoHS compliant with an Ecopack2 grade.

  6. What is the operating temperature range of the STP5NK60ZFP?

    The operating temperature range of the STP5NK60ZFP is from -55°C to 150°C.

  7. What technology is used in the STP5NK60ZFP?

    The STP5NK60ZFP is developed using the SuperMESH technology by STMicroelectronics.

  8. Is the STP5NK60ZFP Zener-protected?

    Yes, the STP5NK60ZFP is Zener-protected.

  9. What are some typical applications for the STP5NK60ZFP?

    The STP5NK60ZFP is typically used in Switch Mode Power Supplies (SMPS), data centers, solar microinverters, and industrial and automotive systems.

  10. Where can I find more detailed specifications and resources for the STP5NK60ZFP?

    You can find detailed specifications, SPICE models, and other resources on the official STMicroelectronics website or through authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:690 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STP5NK60Z
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STP5NK60ZFP
STP5NK60ZFP
MOSFET N-CH 600V 5A TO220FP

Similar Products

Part Number STP5NK60ZFP STP6NK60ZFP STP5NK80ZFP STP5NK65ZFP STP3NK60ZFP STP4NK60ZFP STP5NK50ZFP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Not For New Designs Active Obsolete Not For New Designs Active Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 800 V 650 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc) 6A (Tc) 4.3A (Tc) 4.5A (Tc) 2.4A (Tc) 4A (Tc) 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 2.5A, 10V 1.2Ohm @ 3A, 10V 2.4Ohm @ 2.15A, 10V 1.8Ohm @ 2.1A, 10V 3.6Ohm @ 1.2A, 10V 2Ohm @ 2A, 10V 1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 46 nC @ 10 V 45.5 nC @ 10 V 35 nC @ 10 V 11.8 nC @ 10 V 26 nC @ 10 V 28 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 690 pF @ 25 V 905 pF @ 25 V 910 pF @ 25 V 680 pF @ 25 V 311 pF @ 25 V 510 pF @ 25 V 535 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 25W (Tc) 30W (Tc) 30W (Tc) 25W (Tc) 20W (Tc) 25W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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