STP5NK80ZFP
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STMicroelectronics STP5NK80ZFP

Manufacturer No:
STP5NK80ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 4.3A TO220FP
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STP5NK80ZFP is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized for high-voltage applications, offering a drain-source voltage (VDS) of 800V and a low on-resistance (RDS(on)) of less than 2.4Ω. The STP5NK80ZFP is designed to provide excellent dv/dt capability, making it suitable for the most demanding switching applications. It features built-in gate-to-source Zener diodes for enhanced ESD protection and to safely absorb voltage transients.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)800V
Gate-Source Voltage (VGS)±30V
Drain Current (ID) Continuous at TC=25°C4.3A
Drain Current (ID) Continuous at TC=100°C2.7A
Pulse Drain Current (IDM)17.2A
Static Drain-Source On-Resistance (RDS(on))< 2.4Ω
Total Gate Charge (Qg)32.4nC
Thermal Resistance Junction-Case (Rthj-case)4.2°C/W
Maximum Junction Temperature (TJ)150°C
PackageTO-220FP

Key Features

  • 100% avalanche tested
  • Minimized gate charge
  • Very low intrinsic capacitances
  • Excellent dv/dt capability
  • Built-in gate-to-source Zener diodes for ESD protection
  • Low on-resistance (RDS(on)) of less than 2.4Ω
  • High drain current capability of up to 4.3A
  • ECOPACK® lead-free packages for environmental compliance

Applications

The STP5NK80ZFP is suitable for a variety of high-voltage switching applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Industrial automation and control systems
  • High-voltage power management in automotive and industrial systems

Q & A

  1. What is the maximum drain-source voltage of the STP5NK80ZFP?
    The maximum drain-source voltage (VDS) is 800V.
  2. What is the maximum continuous drain current at 25°C?
    The maximum continuous drain current (ID) at 25°C is 4.3A.
  3. What is the typical on-resistance of the STP5NK80ZFP?
    The typical on-resistance (RDS(on)) is less than 2.4Ω.
  4. Does the STP5NK80ZFP have built-in ESD protection?
    Yes, it features built-in gate-to-source Zener diodes for enhanced ESD protection.
  5. What is the maximum junction temperature of the STP5NK80ZFP?
    The maximum junction temperature (TJ) is 150°C.
  6. What package types are available for the STP5NK80ZFP?
    The device is available in TO-220FP packages.
  7. What is the total gate charge of the STP5NK80ZFP?
    The total gate charge (Qg) is 32.4 nC.
  8. Is the STP5NK80ZFP suitable for high dv/dt applications?
    Yes, it is designed to provide excellent dv/dt capability.
  9. What is the thermal resistance junction-case of the STP5NK80ZFP?
    The thermal resistance junction-case (Rthj-case) is 4.2°C/W.
  10. Are the packages of the STP5NK80ZFP environmentally compliant?
    Yes, the packages are ECOPACK® lead-free, complying with environmental requirements.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.4Ohm @ 2.15A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:45.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:910 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STP5NK80ZFP
STP5NK80ZFP
MOSFET N-CH 800V 4.3A TO220FP

Similar Products

Part Number STP5NK80ZFP STP8NK80ZFP STP7NK80ZFP STP4NK80ZFP STP5NK50ZFP STP5NK60ZFP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc) 6.2A (Tc) 5.2A (Tc) 3A (Tc) 4.4A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 2.15A, 10V 1.5Ohm @ 3.1A, 10V 1.8Ohm @ 2.6A, 10V 3.5Ohm @ 1.5A, 10V 1.5Ohm @ 2.2A, 10V 1.6Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 45.5 nC @ 10 V 46 nC @ 10 V 56 nC @ 10 V 22.5 nC @ 10 V 28 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 910 pF @ 25 V 1320 pF @ 25 V 1138 pF @ 25 V 575 pF @ 25 V 535 pF @ 25 V 690 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 30W (Tc) 25W (Tc) 70W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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