Overview
The STP8NK80ZFP is a high-performance N-channel MOSFET produced by STMicroelectronics. It is part of the SuperMESH™ series, which is optimized from ST's well-established strip-based PowerMESH™ layout. This device is designed to offer extremely high dv/dt capability, making it suitable for the most demanding applications. The STP8NK80ZFP features a drain-source voltage (VDS) of 800V, a continuous drain current (ID) of 6.2A, and a static drain-source on-resistance (RDS(on)) of less than 1.5Ω. It is available in the TO-220FP package, which is lead-free and compliant with JEDEC Standard JESD97.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 800 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25°C | 6.2 | A |
| Continuous Drain Current (ID) at TC = 100°C | 3.9 | A |
| Pulsed Drain Current (IDM) | 24.8 | A |
| Total Dissipation at TC = 25°C | 140 | W |
| Derating Factor | 1.12 W/°C | W/°C |
| Gate-Source Breakdown Voltage (V(BR)DSS) | 800 | V |
| Static Drain-Source On-Resistance (RDS(on)) | < 1.5 | Ω |
| Thermal Resistance Junction-Case (Rthj-case) | 0.89 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
| Maximum Operating Junction Temperature (Tj) | -55 to 150 | °C |
Key Features
- Extremely high dv/dt capability, making it suitable for demanding applications.
- 100% avalanche tested to ensure reliability.
- Minimized gate charge for efficient switching.
- Very low intrinsic capacitances.
- Very good manufacturing repeatability.
- Integrated gate-source Zener diodes for enhanced ESD protection and to absorb voltage transients.
- Available in TO-220FP package, which is lead-free and compliant with JEDEC Standard JESD97.
Applications
The STP8NK80ZFP is designed for various high-voltage switching applications, including:
- Power supplies and converters.
- Motor control and drives.
- High-frequency switching circuits.
- Aerospace and industrial power systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP8NK80ZFP?
The maximum drain-source voltage (VDS) is 800V.
- What is the continuous drain current (ID) at 25°C for the STP8NK80ZFP?
The continuous drain current (ID) at 25°C is 6.2A.
- What is the static drain-source on-resistance (RDS(on)) of the STP8NK80ZFP?
The static drain-source on-resistance (RDS(on)) is less than 1.5Ω.
- What is the thermal resistance junction-case (Rthj-case) for the TO-220FP package?
The thermal resistance junction-case (Rthj-case) is 0.89°C/W.
- Does the STP8NK80ZFP have built-in ESD protection?
Yes, it has integrated gate-source Zener diodes for enhanced ESD protection.
- What are the typical applications of the STP8NK80ZFP?
Typical applications include power supplies, motor control, high-frequency switching circuits, and aerospace and industrial power systems.
- What is the maximum operating junction temperature (Tj) for the STP8NK80ZFP?
The maximum operating junction temperature (Tj) is -55 to 150°C.
- Is the STP8NK80ZFP available in lead-free packaging?
Yes, it is available in lead-free TO-220FP packaging, compliant with JEDEC Standard JESD97.
- What is the derating factor for the STP8NK80ZFP at 25°C?
The derating factor is 1.12 W/°C.
- What is the maximum pulse drain current (IDM) for the STP8NK80ZFP?
The maximum pulse drain current (IDM) is 24.8A.
